BGA616
Silicon Germanium Broadband MMIC Amplifier
Data Sheet, Rev. 2.1, Sept. 2011
RF & Protection Devices
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2011.
All Rights Reserved.
Attention please!
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circuits, descriptions and charts stated herein.
Information
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BGA616
Data Sheet 3 Rev. 2.1, 2011-09-02
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
BGA616, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2011-09-02, Rev. 2.1
Previous Version: 2003-04-16
Page Subjects (major changes since last revision)
All New Chip Version with integrated ESD protection
5 Electrical Characteristics slightly changed
7-8 Figures updated
All Document layout change
Data Sheet 4 Rev. 2.1, 2011-09-02
BGA616
Silicon Germanium Broadband MMIC Amplifier
1 Silicon Germanium Broadband MMIC Amplifier
Figure 1 Pin connection
Description
The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 60 mA.
The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Feature
• Cascadable 50 Ω-gain block
• 3 dB-bandwidth: DC to 2.7 GHz with
19.0 dB typical gain at 1.0 GHz
• Compression point P-1dB = 18 dBm at 2.0 GHz
• Noise figure F50Ω = 2.60 dB at 2.0 GHz
• Absolute stable
•70GHz
fT - Silicon Germanium technology
• 1 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
Applications
• Driver amplifier for GSM/PCS/SCDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
SOT343
Type Package Marking
BGA616 SOT343 BPs
1
2
3
4
GND, 2,4
IN, 1
Out, 3
BGA616
Electrical Characteristics
Data Sheet 5 Rev. 2.1, 2011-09-02
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
2 Electrical Characteristics
Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2)
VCC = 6 V, RBias = 33 Ω, Frequency = 2 GHz, unless otherwise specified
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Device voltage VD4.5 V
Device current ID80 mA
Current into pin In Iin 0.7 mA
Input power1)
1) Valid for ZS = ZL = 50 Ω, VCC = 6 V, RBias = 33 Ω
Pin 10 dBm
Total power dissipation, TS < 78 °C2)
2) TS is measured on the ground lead at the soldering point
Ptot 360 mW
Junction temperature TJ150 °C
Ambient temperature range TA-65... 150 °C
Storage temperature range TSTG -65... 150 °C
ESD capability all pins (HBM: JESD22-A114) VESD 1000 V
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS 200 K/W
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Insertion power gain |S21|220.0 dB f = 0.1 GHz
19.0 dB f = 1 GHz
18.0 dB f = 2 GHz
Noise figure (ZS = 50 Ω) F50Ω2.2 dB f = 0.1 GHz
2.5 dB f = 1 GHz
2.6 dB f = 2 GHz
Output power at 1 dB gain
compression
P-1dB 18 dBm
Output third order intercept point OIP329 dBm
Input return loss RLin 15 dB
Output return loss RLout 15 dB
Total device current ID60 mA
Data Sheet 6 Rev. 2.1, 2011-09-02
BGA616
Electrical Characteristics
Figure 2 Test Circuit for Electrical Characteristics and S-Parameter
BGA616_Test_Circuit.vsd
Reference Plane
Top View
In
Out
In
OutGND
GND
Bias-T
Bias-T
Reference Plane
RBias = 33Ω
VD
ID
VCC= 6V
Caution:
Device Voltage VD at Pin Out!
VD = VCC - RBias I D
BGA616
Measured Parameters
Data Sheet 7 Rev. 2.1, 2011-09-02
3 Measured Parameters
Power Gain |S21|2, Gma = f(f)
VCC = 6V, R Bias = 33Ω, I C = 60mA
10−1 100101
0
2
4
6
8
10
12
14
16
18
20
22
Frequency [GHz]
|S21|2, Gma [dB]
|S21|2
Gma
Matching |S11|, |S22| = f(f)
VCC = 6V, R Bias = 33Ω, I C = 60mA
10−1 100101
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S11|, |S22| [dB]
S11
S22
Power Gain |S21| = f(ID)
f = parameter in GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
22
ID [mA]
|S21|2
1
2
3
4
6
8
Output Compression Point
P−1dB = f(ID), f = 2GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
ID [mA]
P−1dB [dBm]
Data Sheet 8 Rev. 2.1, 2011-09-02
BGA616
Measured Parameters
Device Current I D = f(VCC)
RBias = parameter in Ω
0 2 4 6 8
0
10
20
30
40
50
60
70
80
VCC [V]
I D [mA]
01633
47
68
100
150
Device Current I D = f(TA)
VCC = 6V, R Bias = parameter in Ω
−40 −20 0 20 40 60 80
40
45
50
55
60
65
70
75
80
TA [°C]
I D [mA]
30
33
36
Noise figure F = f(f)
VCC = 6V, R Bias = 33Ω, ZS = 50Ω
TA = parameter in °C
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency [GHz]
F [dB]
−20°C
+25°C
+80°C
BGA616
Package Information
Data Sheet 9 Rev. 2.1, 2011-09-02
4 Package Information
Figure 3 Package Outline SOT343
Figure 4 Tape for SOT343
1.25 ±0.1
0.1 MAX.
2.1±0.1
0.15
+0.1
-0.05
GPS05605
0.3
+0.1
2
±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
0.2
4
2.15
8
2.3
1.1
Pin 1
