1MBH50-060,1MBH50D-060, Molded IGBT
600V / 50A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=100°C IC100
1ms Tc=25°C Icp
Max. power dissipation(IGBT) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
600
±20
82
50
328
310
+150
-40 to +150
70
Unit
V
V
A
A
A
W
°C
°C
N·cm
Equivalent Circuit Schematic
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=100°C IC100
1ms Tc=25°C Icp
Max. power dissipation (IGBT) PC
Max. power dissipation (FWD) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
600
±20
82
50
328
310
140
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
1MBH50-060 / IGBT
1MBH50D-060 / IGBT+FWD
C:Collector
E:Emitter
G:Gate
IGBT
C:Collector
E:Emitter
G:Gate
IGBT + FWD
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
– – 1.0
––20
5.5 – 8.5
– – 3.0
– 3000 –
– 650 –
– 150 –
– – 1.2
– – 0.6
– – 1.0
– – 0.35
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, I C=50mA
VGE=15V, IC=50A
VGE=0V
VCE=10V
f=1MHz
VCC=300V, IC=50A
VGE=±15V
RG=62 ohm
(Half Bridge)
mA
µA
V
V
pF
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance – – 0.40
– – 0.89 IGBT
FWD °C/W
°C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
– – 1.0
––20
5.5 – 8.5
– – 3.0
– 3000 –
– 650 –
– 150 –
– – 1.2
– – 0.6
– – 1.0
– – 0.35
– – 3.0
– – 0.3
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, I C=50mA
VGE=15V, IC=50A
VGE=0V
VCE=10V
f=1MHz
VCC=300V, IC=50A
VGE=±15V
RG=62 ohm
(Half Bridge)
IF=50A, VGE=0V
IF=50A, VGE=-10V, di/dt=100A/µs
mA
µA
V
V
pF
µs
V
µs
Symbol Characteristics Conditions Unit
Min. Typ. Max.
1MBH50-060, 1MBH50D-060 Molded IGBT
1MBH50-060 / IGBT
1MBH50D-060 / IGBT+FWD
Thermal resistance – – 0.40 IGBT °C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
1MBH50-060 / IGBT
1MBH50D-060 / IGBT+FWD
Outline drawings, mm
1MBH50-060, 1MBH50D-060
TO-3PL
Characteristics
1MBH50-060,1MBH50D-060
1MBH50-060, 1MBH50D-060 Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=300V, RG=62 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=300V, RG=62 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
0 5 10 15 20
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
100
10
Collector current : Ic [A] Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
0 20 40 60 80
100
80
60
40
20
0
10
8
6
4
2
0
1000
10
8
6
4
2
0
100
10
1000
0 1 2 3 4 5
0 5 10 15 20
100
80
60
40
20
0
0 20 40 60 80
Collector-Emitter voltage : VCE [V]
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
0 5 10 15 20 25 30 35
100
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
0 50 100 150 200 250
Gate charge : Qg [nC]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
120
100
80
60
40
20
00 100 200 300 400 500 600 700
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
25
20
15
10
5
0
500
400
300
200
100
0
Switching time vs. RG
Vcc=300V, Ic=50A, VGE=±15V, Tj=125°C
Gate resistance : RG [ohm]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 62 ohm
<<> Typical short circuit capability
Vcc=400V, RG=62 ohm, Tj=125°C
Short circuit time : tsc [µs]
1000
600
500
400
300
200
100
0 5 10 15 20 25
Short circuit time current : Isc [A]
Characteristics
1MBH50-060,1MBH50D-060
1MBH50-060, 1MBH50D-060
Gate voltage : VGE [V]
0 50 100 150 200 250
0 50 100 150 200 250
60
50
40
30
20
10
0
IGBT Module
10-4 10-3 10-2 10-1 100
Pulse width : PW [sec.]
Thermal resistance : Rth (j-c) [°C/W]
Transient thermal resistance
Characteristics
1MBH50-060,1MBH50D-060
1MBH50D-060
Reverse recovery time vs. Forward current
-di/dt=150A / µsec Reverse recovery current vs. Forward current
-di/dt=150A / µsec
reverse recovery time : trr [nsec]
reverse recovery current : Irr [A]
400
300
200
100
0
15
10
5
0
0 20 40 60 80
Forward current : IF [A] Forward current : IF [A]
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500
Forward voltage : VF [V]
Forward current : IF [A]
reverse recovery time : trr [nsec]
-di/dt [ A / µsec ]
Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt
IF=50A, Tj=125°C 25
20
15
10
5
0
reverse recovery current : Irr [A]
100
10-1
10-2
101
100
80
60
40
20
0
500
400
300
200
100
0
1MBH50-060, 1MBH50D-060
0 20 40 60 80
