45L(R), 150K(R), 150KS(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 150 A FEATURES * Alloy diode RoHS * High current carrying capability COMPLIANT * High surge current capabilities * Stud cathode and stud anode version DO-205AA (DO-8) * RoHS compliant * Designed and qualified for industrial level TYPICAL APPLICATIONS * Battery chargers * Welders PRODUCT SUMMARY IF(AV) 150 A * Machine tool controls * High power drives * Medium traction applications * Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IF(RMS) IFSM I2 t VRRM VALUES UNITS 150 A 150 C 235 A 50 Hz 3570 60 Hz 3740 50 Hz 64 60 Hz 58 Range 100 to 600 V - 40 to 200 C TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 200 20 200 300 30 300 400 40 400 500 60 600 720 45L(R) 150K(R) 150KS(R) Document Number: 93489 Revision: 21-May-08 For technical questions, contact: ind-modules@vishay.com IRRM MAXIMUM AT TJ = 175 C mA 35 www.vishay.com 1 45L(R), 150K(R), 150KS(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 150 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one cycle forward, non-repetitive surge current TEST CONDITIONS DC at 142 C case temperature 235 t = 10 ms 3570 IFSM t = 10 ms I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing C IF(RMS) t = 10 ms I2t A 150 180 conduction, half sine wave t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied UNITS 150 IF(AV) t = 8.3 ms Maximum I2t for fusing VALUES 3740 A 3000 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 3140 64 58 kA2s 45 41 t = 0.1 to 10 ms, no voltage reapplied 640 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.67 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.83 kA2s V Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.42 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.91 Ipk = 471 A, TJ = 25 C, tp = 10 ms sinusoidal wave 1.33 V VALUES UNITS - 40 to 200 C m Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.25 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.10 K/W minimum Mounting torque 45L maximum minimum maximum minimum Mounting torque 150K 150KS maximum minimum maximum Not lubricated threads Lubricated threads Not lubricated threads Lubricated threads Approximate weight 45L Case style 150K-A 17.0 (150) 12.2 (108) N*m (lbf * in) 15.0 (132) 11.3 (100) 14.1 (125) 9.5 (85) N*m (lbf * in) 12.5 (110) 100 g 3.5 oz. DO-205AC (DO-30) See dimensions - link at the end of datasheet 150KS www.vishay.com 2 14.1 (125) DO-205AA (DO-8) B-42 For technical questions, contact: ind-modules@vishay.com Document Number: 93489 Revision: 21-May-08 45L(R), 150K(R), 150KS(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 150 A RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.031 0.023 120 0.038 0.040 90 0.048 0.053 60 0.071 0.075 30 0.120 0.121 TEST CONDITIONS UNITS TJ = TJ maximum K/W Maximum Allowable Case Temperature (C) 200 45L...,150... Series RthJC (DC) = 0.25 K/ W 190 180 Conduction Angle 170 160 30 150 60 90 120 180 140 0 20 40 60 80 100 120 140 160 200 45L..., 150... Series R thJC (DC) = 0.25 K/ W 190 180 Conduction Period 170 160 30 60 90 120 150 180 140 0 50 100 150 DC 200 250 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 180 K/ W .1 =0 SA R th K/ W 0.2 W K/ 0.3 W K/ 120 0. 8 1 W K/ 140 4 0. 180 120 90 60 30 160 6 0. K/ W K/ W RMS Limit 100 elt -D 1.5 K/ W 80 aR Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 2K /W 60 Conduction Angle 40 45L..., 150... Series TJ = 200C 20 3 K/ W 0 0 40 80 120 Average Forward Current (A) 160 25 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93489 Revision: 21-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 45L(R), 150K(R), 150KS(R) Series Vishay High Power Products Standard Recovery Diodes 250 R th SA W K/ .1 =0 W K/ W K/ K/ W a e lt -D 0. 8 K/ W 1K /W RMS Limit 1.5 Conduc tion Period 45L..., 150... Series TJ = 200C 50 2 K/ R 100 0. 6 2 0. 150 W K/ 200 4 0. DC 180 120 90 60 30 3 0. Maximum Average Forward Power Loss (W) (Stud Version), 150 A K/ W W 3 K/W 0 0 50 100 150 250 25 200 Average Forward Current (A) 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (C) 3500 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics At Any Ra ted Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 200C @60 Hz 0.0083 s @50 Hz 0.0100 s 3000 2500 2000 1500 1000 45L..., 150... Series 500 1 10 100 4000 3500 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 200C No Voltage Reapplied Rated VRRM Reapplied 2500 2000 1500 1000 45L..., 150... Series 500 0.01 0.1 1 Numb er Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 1000 TJ = 25C 100 TJ = 200C 45L...,150... Series 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93489 Revision: 21-May-08 45L(R), 150K(R), 150KS(R) Series Transient Thermal Impedance ZthJC (K/W) Standard Recovery Diodes Vishay High Power Products (Stud Version), 150 A 1 Steady State Value RthJC = 0.25 K7W (DC Operation) 0.1 45L..., 150... Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLES Device code 45 L R 60 1 2 3 4 1 - 45 = Standard version 2 - L = Essential part number 3 - R = Stud reverse polarity (anode to stud) None = Stud normal polarity (cathode to stud) 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) Device code 15 0 K R 60 A 1 2 3 4 5 6 1 - 15 = Essential part number 2 - 0 = Standard device 3 - Case style: K = DO-205AA (DO-8) KS = B-42 4 - R = Stud reverse polarity (anode to stud) None = Stud normal polarity (cathode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - A = Essential part number for 150K (omitted for 150KS) Note: For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93489 Revision: 21-May-08 http://www.vishay.com/doc?95314 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-205AC (DO-30), DO-205AA (DO-8) and B-42 for 45L(R), 150K(R) and 150KS(R) Series DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches) 15.30 (0.60) MAX. O 7.39 (0.297) O 6.89 (0.271) 8.30 (0.327) 7.55 (0.297) 10.41 (0.410) 8.90 (0.350) O 23.30 (0.92) MAX. 137.67 (5.42) 132.58 (5.22) 23.30 (0.917) MAX. 7.88 (0.310) 7.36 (0.290) 17 (0.69) MAX. 27.00 (1.06) MAX. Across flats 1/2"-20UNF-2A Document Number: 95314 Revision: 22-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay Semiconductors DO-205AC (DO-30), DO-205AA (DO-8) and B-42 for 45L(R), 150K(R) and 150KS(R) Series DIMENSIONS FOR 150K(R) SERIES - DO-205AA (DO-8) in millimeters (inches) 15.30 (0.60) MAX. O 7.39 (0.297) O 6.89 (0.271) 10.41 (0.410) 8.90 (0.350) O 23.30 (0.92) MAX. 117.47 (4.625) 111.13 (4.375) 23.30 (0.917) MAX. 7.88 (0.310) 7.36 (0.290) 17 (0.69) MAX. 27.00 (1.06) MAX. Across flats 3/8"-24UNF-2A (1) Note (1) For metric device M12 x 1.75 contact factory www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95314 Revision: 22-Jul-08 Outline Dimensions DO-205AC (DO-30), DO-205AA (DO-8) Vishay Semiconductors and B-42 for 45L(R), 150K(R) and 150KS(R) Series DIMENSIONS FOR 150KS(R) SERIES - B-42 in millimeters (inches) 27.17 (1.070) 26.22 (1.032) 2.03 (0.080) 1.27 (0.050) 21.47 (0.843) 21.20 (0.835) 10.2 (0.401) 9.2 (0.362) O 4.34 (0.171) O 4.09 (0.161) 4.08 (0.161) 3.70 (0.146) 9.50 (0.374) 7.50 (0.295) 37.13 (1.462) 33.83 (1.332) 18.00 (0.708) 14.00 (0.551) 6.76 (0.266) 6.25 (0.246) 12.50 (0.492) 11.70 (0.460) 3/8"-24UNF-2A Document Number: 95314 Revision: 22-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000