150KR20A - Vishay [Semiconductors]

Document Number: 93489 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 21-May-08 1

Standard Recovery Diodes

(Stud Version), 150 A

45L(R), 150K(R), 150KS(R) Series

Vishay High Power Products

FEATURES

• Alloy diode

• High current carrying capability

• High surge current capabilities

• Stud cathode and stud anode version

• RoHS compliant

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Battery chargers

•Welders

• Machine tool controls

• High power drives

• Medium traction applications

• Freewheeling diodes

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IF(AV) 150 A

DO-205AA (DO-8)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

150 A

TC150 °C

IF(RMS) 235 A

IFSM

50 Hz 3570 A

60 Hz 3740

I2t50 Hz 64 kA2s

60 Hz 58

VRRM Range 100 to 600 V

TJ- 40 to 200 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VRRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

IRRM MAXIMUM

AT TJ = 175 °C

45L(R)

150K(R)

150KS(R)

10 100 200

20 200 300

30 300 400

40 400 500

60 600 720

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93489

2Revision: 21-May-08

45L(R), 150K(R), 150KS(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 150 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

at case temperature IF(AV) 180° conduction, half sine wave 150 A

150 °C

Maximum RMS forward current IF(RMS) DC at 142 °C case temperature 235

Maximum peak, one cycle forward,

non-repetitive surge current IFSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

3570

t = 8.3 ms 3740

t = 10 ms 100 % VRRM

reapplied

3000

t = 8.3 ms 3140

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

kA2s

t = 8.3 ms 58

t = 10 ms 100 % VRRM

reapplied

t = 8.3 ms 41

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 640 kA2√s

Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.67 V

High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.83

Low level value of forward

slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.42

mΩ

High level value of forward

slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.91

Maximum forward voltage drop VFM Ipk = 471 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.33 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating

and storage temperature range TJ, TStg - 40 to 200 °C

Maximum thermal resistance,

junction to case RthJC DC operation 0.25

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.10

Mounting torque

45L

minimum Not lubricated threads 14.1 (125)

N · m

(lbf · in)

maximum 17.0 (150)

minimum Lubricated threads 12.2 (108)

maximum 15.0 (132)

Mounting torque

150K

150KS

minimum Not lubricated threads 11.3 (100)

N · m

(lbf · in)

maximum 14.1 (125)

minimum Lubricated threads 9.5 (85)

maximum 12.5 (110)

Approximate weight 100 g

3.5 oz.

Case style

45L

See dimensions - link at the end of datasheet

DO-205AC (DO-30)

150K-A DO-205AA (DO-8)

150KS B-42

Document Number: 93489 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 21-May-08 3

45L(R), 150K(R), 150KS(R) Series

Standard Recovery Diodes

(Stud Version), 150 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.031 0.023

TJ = TJ maximum K/W

120° 0.038 0.040

90° 0.048 0.053

60° 0.071 0.075

30° 0.120 0.121

140

150

160

170

180

190

200

0 20406080100120140160

30° 60° 90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

45L...,150... Se ries

R (DC) = 0.25 K/ W

thJC

140

150

160

170

180

190

200

0 50 100 150 200 250

30° 60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Period

Average Forward Current (A)

45L..., 150... Series

R (DC) = 0.25 K/ W

thJC

25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

R=0.1K

/W-DeltaR

0.2K

0.6 K

0.8K/W

1.5K

2K/W

0.4K

0.3K/W

thSA

160

100

120

140

160

180

40 80 120

RM S Lim it

180°

120°

90°

60°

30°

Conduction Angle

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

45L..., 150... Series

T = 200°C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93489

4Revision: 21-May-08

45L(R), 150K(R), 150KS(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 150 A

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Voltage Drop Characteristics

25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

R=0.1K

/W-DeltaR

0.3K

thS

3K/W

1.5K

0.8K

0.6K

0.4K

0.2K

250

100

150

200

250

050100150200

180°

120°

90°

60°

30°

RM S Li m it

Conduc tion Period

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

45L..., 150... Series

T = 200°C

500

1000

1500

2000

2500

3000

3500

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

Init ia l T = 200°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Ra te d Loa d Co nd itio n And With

Ra ted V Applied Following Surge.

RRM

45L..., 150... Series

500

1000

1500

2000

2500

3000

3500

4000

0.01 0.1 1

Pulse Tra in Du r a t i o n ( s)

Pe a k Ha lf Sine Wave Forward Current (A)

Initial T = 200°C

No Voltage Reapplied

Rated V Reapplied

Versus Pulse Train Dura tion.

RRM

Maximum Non Repetitive Surge Current

45L..., 150... Series

100

1000

10000

00.511.522.533.544.5

T = 2 5 ° C

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

T = 200°C

45L...,150... Se rie s

Document Number: 93489 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 21-May-08 5

45L(R), 150K(R), 150KS(R) Series

Standard Recovery Diodes

(Stud Version), 150 A Vishay High Power Products

Fig. 8 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLES

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Steady State Value

R = 0.25 K7W

(DC Operation)

45L..., 150... Series

thJC

Device code

2 51 3 4

15 0 K R 60 A

1- 15 = Essential part number

2- 0 = Standard device

3- Case style:

K = DO-205AA (DO-8)

KS = B-42

4- R = Stud reverse polarity (anode to stud)

None = Stud normal polarity (cathode to stud)

5- Voltage code x 10 = VRRM (see Voltage Ratings table)

A = Essential part number for 150K (omitted for 150KS)

Note: For metric device M12 x 1.75 contact factory

Device code

21 3 4

45 L R 60

- 45 = Standard version

- L = Essential part number

- R = Stud reverse polarity (anode to stud)

None = Stud normal polarity (cathode to stud)

- Voltage code x 10 = VRRM (see Voltage Ratings table)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95314

Document Number: 95314 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 22-Jul-08 1

DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series

Outline Dimensions

Vishay Semiconductors

DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches)

15.30 (0.60) MAX.

8.30 (0.327)

7.55 (0.297)

Ø 7.39 (0.297)

Ø 6.89 (0.271)

10.41 (0.410)

8.90 (0.350)

Ø 23.30 (0.92) MAX.

17 (0.69) MAX.

1/2"-20UNF-2A

27.00 (1.06) MAX.

Across flats

7.88 (0.310)

7.36 (0.290)

137.67 (5.42)

132.58 (5.22)

23.30 (0.917)

MAX.

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95314

2Revision: 22-Jul-08

Outline Dimensions

Vishay Semiconductors DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series

DIMENSIONS FOR 150K(R) SERIES - DO-205AA (DO-8) in millimeters (inches)

Note

(1) For metric device M12 x 1.75 contact factory

15.30 (0.60) MAX.

Ø 7.39 (0.297)

Ø 6.89 (0.271)

10.41 (0.410)

8.90 (0.350)

Ø 23.30 (0.92) MAX.

3/8"-24UNF-2A (1)

27.00 (1.06) MAX.

Across flats

7.88 (0.310)

7.36 (0.290)

117.47 (4.625)

111.13 (4.375)

23.30 (0.917)

MAX.

17 (0.69)

MAX.

Document Number: 95314 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 22-Jul-08 3

Outline Dimensions

DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series Vishay Semiconductors

DIMENSIONS FOR 150KS(R) SERIES - B-42 in millimeters (inches)

2.03 (0.080)

1.27 (0.050)

4.08 (0.161)

3.70 (0.146)

9.50 (0.374)

7.50 (0.295)

18.00 (0.708)

14.00 (0.551)

6.76 (0.266)

6.25 (0.246)

3/8"-24UNF-2A

12.50 (0.492)

11.70 (0.460)

Ø 4.34 (0.171)

Ø 4.09 (0.161)

10.2 (0.401)

9.2 (0.362)

21.47 (0.843)

21.20 (0.835)

37.13 (1.462)

33.83 (1.332)

27.17 (1.070)

26.22 (1.032)

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Revision: 12-Mar-12 1Document Number: 91000

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