APT40N60JCU3
APT40N60JCU3 – Rev 0 April, 2004
APT website
htt
:/
www.advanced
ower.com 3-8
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 30A 1.6 1.8
IF = 60A 1.9
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.4
V
VR = 600V Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA
CT Junction Capacitance VR = 200V 44 pF
Reverse Recovery Time IF=1A,VR=30V
di/dt =100A/µs Tj = 25°C 23
Tj = 25°C 85
trr
Reverse Recovery Time Tj = 125°C 160
ns
Tj = 25°C 4
IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A
Tj = 25°C 130
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 700 nC
trr Reverse Recovery Time 70 ns
Qrr Reverse Recovery Charge 1300 nC
IRRM Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
30 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMos 0.43
RthJC Junction to Case Diode 1.21
RthJA Junction to Ambient (IGBT & Diode) 20
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration