type V1 UP TO 1500V 0.6A(RMS) HIGH SPEED TYPE DIODE BFEATURES OUTLINE DRAWING x : @V11 is a device developed for switching applica- | @- tions, with a reverse recovery time of 0. 4fesec. iS This product is optimum for use in high-frequency circuits such as television horizontal deflection one 5 circuits, 8 @ Due to employment of the glass encapsulation that = = 3 gained high repute in V03/V06, great conven- 3 qi 8 ience is provided for build-in wiring. Dieonet 3| y g @ Because of strict quality control and steady mass Type polarity s*Z2z2 a production, this diode offers uniform character- V11J(800V) | Green Bs 5 ie 8 istics and remarkably high reliability. V11L(1,000V) | Yellow 9 = a V11M(1,300V)| Black 2 ii V11N(1,500V)| Red 8 Oo BS & @ 2 7B in ls wR] & 0. duesec (CH Z AA v FUPRELCTMRBLRRFC, FLEMDKE AEA, ESBS CCH. | @ HEISE V03/V O06 THEE BLEL RTI ARFT CHD b HAA ACR IC KAA CHOET. ORE cin tc ReEL RRR EIT eo TK ETAT, REAR tCH), Mi CREO Mmey4trF CT, MMAXIMUM ALLOWABLE RATINGS Hitachi Type V1lJ VIL V1iM V1iIN Items Symbols Units | -~-~~~~____EIAJ No. 1S 2323 18 2324 1S 2325 1S 2326 Repetitive Peak Reverse Voltage VRRM V 800 1, 000 1, 300 - 1,500 Non-repetitive Peak Reverse Voltage Vasm V 1, 000 1, 300 1, 600 1, 800 Average Forward Current lo A 0. 4 (Sinsle-phase half-wave 180 conduction ambient ) Peak One-cycle Surge Current Irsm A 25 (10msec conduction, sine half-wave 1 cycle) It Limit Value It Asec| 3.0 (Time=2~10msec. I-RMS value) - Operating Temperature Tj Cc 40~ +125 - Storage Temperature Tstz | TC 40~ +150 Weight g 0. 35 MCHARACTERISTICS -* Items Symbols | Units Ratings Maximum Reverse Current Irm _ Maximum Forward Voltage Drop Vem V_ | 3.0 (Sindemise: naecpre Peak value 1.6A, conduction) Reverse Recovery Time ter fesec 0.4 (T;: 25C, Measuring conditions are based. on test circuit) Therma! Resistance Ren c/W _ {Junction to Air)