TIC206 SERIES SILICON TRIACS Sensitive Gate Triacs TO-220 PACKAGE (TOP VIEW) 4 A RMS Glass Passivated Wafer MT1 1 400 V to 700 V Off-State Voltage MT2 2 G 3 Max IGT of 5 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. This series is currently available, but not recommended for new designs. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC206D Repetitive peak off-state voltage (see Note 1) TIC206M Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) TIC206S Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) Average gate power dissipation at (or below) 85C case temperature (see Note 4) Operating case temperature range Storage temperature range SYMBOL VALUE UNIT VDRM 600 V 400 700 IT(RMS) 4 ITSM A 25 A 1.3 W TC -40 to +110 C TL 230 C IGM 0.2 PGM PG(AV) Tstg Lead temperature 1.6 mm from case for 10 seconds MDC2ACA A 0.3 -40 to +125 W C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 160 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT Repetitive peak off-state current Gate trigger current TEST CONDITIONS VD = rated VDRM IG = 0 Vsupply = +12 V RL = 10 Vsupply = -12 V RL = 10 Vsupply = +12 V Vsupply = -12 V MIN TYP TC = 110C tp(g) > 20 s 0.9 MAX UNIT 1 mA 5 RL = 10 tp(g) > 20 s -2.2 -5 RL = 10 tp(g) > 20 s 2.4 10 tp(g) > 20 s -1.8 -5 mA All voltages are with respect to Main Terminal 1. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC206 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VGT VT TYP MAX Vsupply = +12 V RL = 10 tp(g) > 20 s 0.7 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.7 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.7 -2 On-state voltage IH Holding current IL Latching current dv/dt dv/dt(c) Critical rate of rise of off-state voltage Critical rise of commutation voltage TEST CONDITIONS MIN V Vsupply = -12 V RL = 10 tp(g) > 20 s 0.7 2 IT = 4.2 A IG = 50 mA (see Note 5) 1.4 2.2 Vsupply = +12 V IG = 0 Init' ITM = 100 mA 1.5 15 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -1.3 -15 Vsupply = +12 V Vsupply = -12 V 30 (see Note 6) -30 VDRM = Rated VDRM IG = 0 TC = 110C VDRM = Rated VDRM ITRM = 4.2 A TC = 85C 1 UNIT V mA mA 20 V/s 3 V/s All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 7.8 C/W 62.5 C/W DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC206 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs GATE TRIGGER VOLTAGE vs TEMPERATURE + + tw(g) = 20 s VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA + + 10 1 -40 -20 0 20 40 60 80 100 VAA = 12 V + + - RL = 10 tw(g) = 20 s + + 1 0*1 -60 120 Vsupply IGTM -40 -20 TC - Case Temperature - C 0 20 40 CASE TEMPERATURE CASE TEMPERATURE TC05AD 100 IL - Latching Current - mA IH - Holding Current - mA IG = 0 Initiating ITM = 100 mA 1 Vsupply + - 20 40 60 80 100 TC - Case Temperature - C DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 120 + + - TC05AE + + 10 1 0 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. 120 VAA = 12 V Vsupply IGTM VAA = 12 V 0 100 LATCHING CURRENT vs 10 -20 80 Figure 2. HOLDING CURRENT vs -40 60 TC - Case Temperature - C Figure 1. 0*1 -60 TC05AB 10 VAA = 12 V RL = 10 Vsupply IGTM 0*1 -60 TEMPERATURE TC05AA 100 Figure 4. 3