FEATURES
DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101
REVERSE LEAKAGE CURRENT IR = 0.1pA
REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V
REVERSE CAPACITANCE Crss = 0.75pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature -55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation 300mW
Maximum Currents
Forward Current 20mA
Reverse Current 100µA
Maximum Voltages
Reverse Voltage 30V
Diode to Diode Voltage ±50V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVR Reverse Breakdown Voltage 30 IR = 1µA
VF Forward Voltage 0.8 1.1 V IF = 10mA
0.1 VR = 1V
IR Reverse Leakage Current 2.0 10
|IR1-IR2| Differential Leakage Current 3
pA VR = 10V
Crss Total Reverse Capacitance2 0.75 1 pF VR = 10V, f = 1MHz
ID100
NC
K1
NC
K2
5
BOTTOM VIEW
TO-78
1
2
3
6
7
1A2
ID101
NC
K1
A2
K2
3
17
5
BOTTOM VIEW
TO-71
62
A1
NC
Linear Integrated System
ID100 ID101
MONOLITHIC DUAL
PICO AMPERE DIODES
Linear Integrated System
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