IPB160N04S2L-03
OptiMOS® - T Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 160 A
TC=100 °C2) 160
Pulsed drain current2) ID,pulse TC=25 °C 640
Avalanche energy, single pulse EAS ID=80 A, RGS=25 Ω810 mJ
VGS ±20 V
Power dissipation Ptot TC=25 °C 300 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 40 V
RDS(on),max 2.7 mΩ
ID160 A
Product Summary
Type Package Ordering Code Marking
IPB160N04S2L-03 PG-TO263-7-3 SP0002-18153 P2N04L03
PG-TO263-7-3
Rev. 1.0 page 1 2006-03-02
IPB160N04S2L-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - 0.5 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area3) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 1.2 1.6 2
Zero gate voltage drain current IDSS
VDS=40 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=40 V, VGS=0 V,
Tj=125 °C2) - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on)
VGS=4.5 V, ID=80 A,
SMD version - 2.8 3.7 mΩ
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=80 A,
SMD version - 2.0 2.7
Values
Rev. 1.0 page 2 2006-03-02
IPB160N04S2L-03
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 6000 - pF
Output capacitance Coss - 2200 -
Reverse transfer capacitance Crss - 700 -
Turn-on delay time td(on) -20-ns
Rise time tr-51-
Turn-off delay time td(off) -75-
Fall time tf-30-
Gate Char
g
e Characteristics2)
Gate to source charge Qgs -2028nC
Gate to drain charge Qgd -4690
Gate charge total Qg- 163 230
Gate plateau voltage Vplateau - 3.4 - V
Reverse Diode
Diode continuous forward current IS- - 160 A
Diode pulse current IS,pulse - - 640
Diode forward voltage VSD
VGS=0 V, IF=80 A,
Tj=25 °C - 0.84 1.3 V
1) Current is limited by bondwire; with an RthJC = 0.5K/W the chip is able to carry 243A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=20 V, VGS=10 V,
ID=160 A, RG=1.1 Ω
VDD=32 V, ID=160 A,
VGS=0 to 5 V
Rev. 1.0 page 3 2006-03-02
IPB160N04S2L-03
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
0.001
0.01
0.1
1
0000001
tp [s]
ZthJC [K/W]
0
50
100
150
200
250
300
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC [°C]
ID [A]
Rev. 1.0 page 4 2006-03-02
IPB160N04S2L-03
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.2V
3.5V
3.8V
4.1V
4.5V
10V
0
2
4
6
8
10
12
0 20406080100
ID [A]
RDS(on) [mΩ]
C °25
C °175
0
20
40
60
80
100
120
140
160
180
200
012345
VGS [V]
ID [A]
0
50
100
150
200
250
300
0 50 100 150 200
ID [A]
gfs [S]
2.8V
3V
3.2V
3.5V
3.8V
4.1V
4.5V
10V
0
20
40
60
80
100
120
140
160
180
200
0123
VDS [V]
ID [A]
Rev. 1.0 page 5 2006-03-02
IPB160N04S2L-03
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=60 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Typ. Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
0
1
2
3
4
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
250µA
1250µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
100
1000
10000
0 5 10 15 20 25 30
VDS [V]
C [pF]
25 °C
175 °C
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF [A]
Rev. 1.0 page 6 2006-03-02
IPB160N04S2L-03
13 Typ. avalanche energy 14 Typ. gate charge
EAS=f(TJ)VGS=f(Qgate); ID=160A pulsed
parameter: ID=80A, VDD=25V parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
8V 32V
0
2
4
6
8
10
12
0 40 80 120 160 200
Qgate [nC]
VGS [V]
36
38
40
42
44
46
48
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
0
100
200
300
400
500
600
700
800
900
25 75 125 175
TJ [°C]
EAV [mJ]
Rev. 1.0 page 7 2006-03-02
IPB160N04S2L-03
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 2004
All Rights Reserved.
• Pb-free lead plating; RoHS compliant
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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be expected to cause the failure of that life-support device or system, or to affect the safety or
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it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2006-03-02
