ABB SEMICONDUCTORS AG J4E >) El o01b838 goooo32 O BMABB Phase Control . Neizthyristoren Thyristors de Thyristors rseau Ordering number Vorm Itaus Te [hav Te flsm [Vio [Fr Tvam [Rinse [F Fig. |Datasheet Bestellnummer Vram tp = No. |Datenblatt Num. de commande 10 ms Feuille technique Vv A C JA C |kA C jmQ |C |K/W [KN Y8170 121 P4B...P10B 400...1000/3580 85 [2280 85 {25 0.75 {0.16 {150 |0.015/16* |22 YST14-05 YS130 101 P8D.,.18D 800,..1800] 510 70 325 70 5.0 [0.89 |0.85 1125 |0.09 | 4 {14 YST 2-03 YS150 103 P8D...18D 800...1800] 1090 70 700 70 9.0 |0.80 [0.59 {125 {0.04} 8 |17 YST 6-01 YS170 120 P14D...18D 1400.,.1800/2900 70 = =41845 70 =({21 0.83 {0.23 {125 |0.015}16* 122 YST14-04 YS180 101 P14D...18D 1400...1800/4230 70 42700 70 =(|47 0.88 ]0.10 [125 |0.012/50 18 YST35-01 YS8110 112 P22D...26D 2200...2600}7060 70 = =44500 70 (175 0.86 |0.07 {125 |0.006/90 116 YST60-25** YS8150 104 P22D.,.28D 2200...2800} 920 70 590 70 8.0 [0.92 10.78 {125 [0.04] 8 |17 YST 6-22 Y8170 123 P22D...28D 2200...2800/2480 70 =|1580 70 +118 0.82 /0.37 (125 |0.015]/16* j22 YST14-202 YS170 115 P18D...28D 1800...2800]2480 70 11580 70 (118 0.82 10.37 }125 |0.015/16* |22 YST14-27** YS180 103 P22D...28D 2200...2800]3680 70 2350 70 ==|43 0.85 [0.16 [125 |0.012/50 118 YST35-22 YS190 108 P22D...28D 2200...2800}5180 70 = =|3300 70 = =|60 0.95 ]0.10 {125 |0.008]70 18 YST45-26* * 8110 101 P22D...28D 2200...280016750 70 ~=|4300 70 (175 0.92 j0.09 {125 |0.006/90 116 YST60-22** YS150 109 P34G...42G 3400...4200) 660 70 425 70 6.4 [1.00 [1.50 [125 |0.04] 8 1/17 YST 6-21 YS170 122 P34G...42G 3400...4200) 1920 70 (41225 70 415 0.95 j0.58 1125 |0.015]/16* |22 YST14-201 YS170 116 P34G.,.42G 3400...4200] 1920 70 = |1225 7Q = =({15 0.95 {0.58 }125 |0.015)16* j22 YST14-29** Y8180 102 P34G...42G 3400...4200/2900 70 =|1850 70 {32 0.96 {0.29 |125 j0.012/50 |18 YST35-21 YS8190 113 P34G...42G 3400...4200/4390 70 12800 70 152 0.97 [0.16 [125 10.008}70 118 YST45-27** YS110 107 P34G...42G 3400...4200/5880 70 43750 70 460 0.95 j0.13 |125 10.006}90 {16 YST60-21** YS190 101 P42G...52G 4200...6200]3920 70 42500 70 {42 1.00 |0.23 }125 /0.008/70 118 YST45-21** YS110 108 P44G...52G 4400...6200)5250 70 13350 70 = |55 1.03 0.16 {125 |0.006/90 ]16 YST60-23** CS184-48,..55 lo 1 4800...5500) 630 50 260 85 6.7 {1.18 |2.70 }120 10.045)11 415 CH-4UH 88010** CS284-48...55 lo 1 4800...6500} 700 50 290 85 7.0. 41.09 2.18 ]120 |0.045}11 {15 CH-4UH 88010** YS8170 113 P56G...65G 5600...6500) 1280 70 815 7O =(|14.6 11.22 |0.97 |125 |0.018)16* }19 YST14-26 YS8190 114 P56G...65G 5600...6500)2820 70 =~} 1800 70 = =|32 1,20 |0.43 1125 |0.009/70 21 YST45-28** YS8110 110 P56G...65G 600...6500}4160 70 + =42650 70 (145 1.12 |0.29 }125 /0.006;90 16 YST60-24** * Allowed mounting force = 14,4-24 KN * Zulassige Anpresskraft = 14,4~24 kN * Force de serrage admissible = 14,4-24 kN ** Interdigitated amplifying gate ** Integrierte Zindverstarkung mit ver- ** Gachette amplificatrice interdigite teiltem Gate z r wy ie tf hea Me - ., E J Mad vei Fig. 12 - Electronic static var compensator. Elektronischer Blindleistungs-Kompensator. Compensation de puissance ractive. A BB SEMICONDUCTORS AG - 38E D MM 0016838 0000033 2 EAABB Thyristor Dimensions MaBbilder Thyristoren Dimensions des thyristors Dimensions in mm Abmessungen in mm Dimensions en mm A = Anode G = Gate A = Anode G = Gate A = Anode G = Gachette K = Cathode HK = Auxiliary cathode K = Kathode HK = Hilfskathode K = Cathode HK = Cathode auxiliaire Fig. 14 Brande " Fig. 17 pe? 1sah0s 254206 Fer tab. For Bachsischer Patlakrocets 6 3x08 Din 46 244; 63x08 (0 N4a2445 oaex2209 KOO Sam? Catia ted Uitze cot Catia rouge Fig. 18 Fig. 21 Fig. 18 oaates ite Cake blanche Fortap Fur Bachs*auk: Pour ta [ang sete G6 3x08 (DIN 46 244) 43624205 Cable red. Udzerct (ae sre Caba teuge Par Cachsecker Pouristargueza | 3x08 (D'N 46 244) @36x4205 * KKOOSra? B36x4205 Cak's ted HKGO Sm? Liza rat [caters tizerct Catia rouge GO0 Sem Catiawhis Lize wes3 Fig. 19 Cat's mugs. G@O0s~n? Catie wha Lize wess Cabie Hane Bax4105 ~S GOs Cab wh 12 brews ss Cat's tions