MBR16100CTG - ON Semiconductor

May, 2008 − Rev. 5

1Publication Order Number:

MBR16100CT/D

MBR16100CT

SWITCHMODE]

Power Rectifier

Features and Benefits

•Low Forward Voltage

•Low Power Loss / High Efficiency

•High Surge Capacity

•175°C Operating Junction Temperature

•Low Stored Charge Majority Carrier Conduction

•16 A Total (8.0 A Per Diode Leg)

•Pb−Free Package is Available*

Applications

•Power Supply − Output Rectification

•Power Management

•Instrumentation

Mechanical Characteristics

•Case: Epoxy, Molded

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Weight: 1.9 Grams (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•ESD Rating: Human Body Model = 3B

Machine Model = C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MBR16100CT TO−220 50 Units/Rail

SCHOTTKY BARRIER

RECTIFIER

16 AMPERES, 100 VOLTS

2, 4

http://onsemi.com

MBR16100CTG TO−220

(Pb−Free)

50 Units/Rail

TO−220AB

CASE 221A

PLASTIC

STYLE 6

MARKING

DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

B16100 = Device Code

G = Pb−Free Package

AKA = Diode Polarity

AYWW

B16100G

AKA

MBR16100CT

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MAXIMUM RATINGS (Per Diode Leg)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100 V

Average Rectified Forward Current

(TC = 166°C) Per Diode

Per Device

IF(AV) 8.0

Peak Repetitive Forward Current

(Square Wave, 20 kHz)

TC = 165°C

IFRM 16 A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM 150 A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A

Operating Junction Temperature (Note 1) TJ*65 to +175 °C

Storage Temperature Tstg *65 to +175 °C

Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Case (Min. Pad)

Junction−to−Ambient (Min. Pad)

RqJC

RqJA

2.0

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic Symbol Min Typical Max Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 8.0 A, TJ = 125°C)

(iF = 8.0 A, TJ = 25°C)

(iF = 16 A, TJ = 125°C)

(iF = 16 A, TJ = 25°C)

−

0.56

0.68

0.67

0.79

0.60

0.74

0.69

0.84

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

−

0.95

0.0013

5.0

0.1

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

MBR16100CT

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Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode

0.60

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

100

0.2 0.4 0.8

0.1

TJ = 25°C

175°C

125°C75°C

0.50.1 0.3 0.7 0.9

, INSTANTANEOUS FORWARD

VOLTAGE (AMPS)

0.60

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

100

0.2 0.4 0.8

0.1

TJ = 25°C

175°C

125°C75°C

0.50.1 0.3 0.7 0.9

, INSTANTANEOUS FORWARD

CURRENT (AMPS)

Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode

VR, REVERSE VOLTAGE (VOLTS)

10 20 30 40 100

Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg

50 60 70 80 90

IR, REVERSE CURRENT (AMPS)

TJ = 25°C

175°C

125°C

75°C

VR, REVERSE VOLTAGE (VOLTS)

10 20 30 40 10050 60 70 80 90

IR, REVERSE CURRENT (AMPS)

TJ = 25°C

175°C

125°C

75°C

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

TA, AMBIENT TEMPERATURE (°C)

05025 75

2.0

4.0

6.0

8.0

TC, CASE TEMPERATURE (C°)

180

4.0

SQUARE WAVE

145 155 160

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

2.0

6.0

8.0

140 150 0100 125 150 175

SQUARE WAVE

RATED VOLTAGE APPLIED

RqJA = 16° C/W

RqJA = 60° C/W

(NO HEATSINK)

170 175

165

1E−1

1E−2

1E−3

1E−6

1E−7

1E−5

1E−4

1E−1

1E−2

1E−3

1E−6

1E−7

1E−5

1E−4

MBR16100CT

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VR, REVERSE VOLTAGE (VOLTS)

100

1200

600

20 30 40 80

1400

1000

800

50 60 70

200

400

90 100

C, CAPACITANCE (pF)

Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance Per Diode

P , AVERAGE FORWARD POWER DISSIPATION (WATTS)

F (AV)

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

04 12816

SQUARE WAVE

20 24 28 30

210614182226

TJ = 175°C

MBR16100CT

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 6:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

MBR16100CT/D

SWITCHMODE is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).

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