DS30060 Rev. 10 - 2 1 of 3 MMBTA92
www.diodes.com ã Diodes Incorporated
MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Characteristic Symbol MMBTA92 Unit
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current (Note 1) (Note 3) IC-500 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Maximum Ratings @ TA = 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
·Marking (See Page 2): K3R
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -300 ¾VIC = -100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -300 ¾VIC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -100mA, IC = 0
Collector Cutoff Current ICBO ¾-250 nA VCB = -200V, IE = 0
Collector Cutoff Current IEBO ¾-100 nA VCE = -3.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
25
40
25
¾ ¾
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.5 V IC = -20mA, IB = -2.0mA
Base- Emitter Saturation Voltage VBE(SAT) ¾-0.9 V IC = -20mA, IB = -2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾6.0 pF VCB = -20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product fT50 ¾MHz VCE = -20V, IC = -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead.
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Features
·Epitaxial Planar Die Construction
·Complementary NPN Type Available (MMBTA42)
·Ideal for Medium Power Amplification and Switching
·Lead Free/RoHS Compliant (Note 4)
·Qualified to AEC-Q101 Standards for High Reliability
DS30060 Rev. 10 - 2 2 of 3 MMBTA92
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 123456789OND
Date Code Key
K3R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3R
YM
Marking Information
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
MMBTA92-7-F SOT-23 3000/Tape & Reel
Ordering Information (Note 5)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPRSTUVW
110 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9 IC
IB
= 10
DS30060 Rev. 10 - 2 3 of 3 MMBTA92
www.diodes.com
1
10
1000
10000
100
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs
Collector Current
T = -50°C
AT = 25°C
A
T = 150°C
A
V = 5V
CE
0.1
0.2
0.1 1 10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage vs Collector Current
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
10
100
110
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs
Collector Current
V = 5V
CE
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
