VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 1Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
DESCRIPTION
VSMF2890RG(G)X01 series are infrared, 890 nm emitting
diodes in GaAlAs (DH) technology with high radiant power
and high speed, molded in clear, untinted plastic packages
(with lens) for surface mounting (SMD).
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
AEC-Q101 qualified
Peak wavelength: p = 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: = ± 12°
Low forward voltage
Suitable for high pulse current operation
Terminal configurations: gullwing or reserve gullwing
Package matches with detector VEMD2000X01 series
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
IrDA compatible data transmission
•3D TV
Miniature light barrier
Photointerrupters
Optical switch
Shaft encoders
IR emitter source for proximity applications
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
VSMF2890RGX01 VSMF2890GX01
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
VSMF2890RGX01 40 ± 12 890 30
VSMF2890GX01 40 ± 12 890 30
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMF2890RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMF2890GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 2Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. figure 9, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB RthJA 250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.25 1.4 1.6 V
IF = 1 A, tp = 100 μs VF2.3 V
Temperature coefficient of VF
IF = 1 mA TKVF - 1.8 mV/K
IF = 100 mA TKVF - 1.1 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie20 40 60 mW/sr
IF = 1 A, tp = 100 μs Ie350 mW/sr
Radiant power IF = 100 mA, tp = 20 ms e40 mW
Temperature coefficient of eIF = 100 mA TKe- 0.35 %/K
Angle of half intensity ± 12 deg
Peak wavelength IF = 30 mA p870 890 910 nm
Spectral bandwidth IF = 30 mA  40 nm
Temperature coefficient of pIF = 30 mA TKp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr30 ns
Fall time IF = 100 mA, 20 % to 80 % tf30 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc12 MHz
Virtual source diameter d 1.5 mm
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 3Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Fig. 8 - Pulse Forward Current vs. Pulse Duration
18873_1
IF - Forward Current (mA)
1000
100
10
1
VF - Forward Voltage (V)
02413
t
p
= 100 µs
t
p
/T = 0.001
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
V
F, rel
- Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
1
10
100
1000
0.001 0.1 1
IF - Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
1
0.01
tp = 100 µs
800 900
λ - Wavelength (nm)
1000
20082
0
0.25
0.5
0.75
1.0
1.25
Φ
e rel
- Relative Radiant Power
0.4 0.2 0
Ie rel - Relative Radiant Intensity
21550
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 4Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMF2890RGX01
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
2.2
5.8 ± 0.2
2.77 ± 0.2
2.3 ± 0.2
Cathode
0.5
0.05 ± 0.1
0.254
1.1 ± 0.1
Anode
0.4
2.2
0.19
0.3
1.6
0.4
Z
Ø 1.8 ± 0.1
2.3 ± 0.2
specications
according to DIN
technical drawings
Not indicated tolerances ± 0.1
Drawing-No.: 6.544-5391.02-4
Pin ID
exposed copper
Issue: 2; 18.03.10
21517
0.75
6.7
1.7
Ø 2.3 ± 0.1
Solder pad proposal
acc. IPC 7351
Z 20:1
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 5Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMF2890GX01
2.2
4.2 ± 0.2
2.77 ± 0.2
0.05
0.254
0.6
2.2
0.19
0.3
1.6
0.4 Ø 1.8
specifications
according to DIN
technical drawings
Not indicated tolerances ± 0.1
Drawing-No.: 6.544-5383.02-4
Issue: 4; 18.03.10
exposed copper
0.75
2.45
5.15
Solder pad proposal
acc. IPC 7351
21488
X
X 20:1
Cathode Anode
0.4
2.3 ± 0.2
2.3 ± 0.2
0.5
Pin ID
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 6Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMF2890RGX01
Issue: 2; 18.03.10
Drawing-No.: 9.800-5100.01-4
Leader and trailer tape:
Parts mounted
Empty (400 mm min.)
Empty (160 mm min.)
Direction of pulling out
Unreel direction
Ø 62 ± 0.5
Ø 330 ± 1
Reel
2.5± 0.5
Label posted here
coming out from reel
Tape position
X
Ø13± 0.5
12.4 ± 1.5
X 2:1
I
II
6000 pcs/reel
12 ± 0.3
5.5 ± 0.05 1.75 ± 0.1
2 ± 0.05
4 ± 0.1
4 ± 0.1
Ø 1.55 ± 0.05
3.05 ± 0.1
21572
Technical drawings
according to DIN
specifications
Terminal position in tape
Devicce
VEMD2000
VEMD2500
Cathode Anode
Anode Cathode
VSMB2000
VSMG2000
VSMY2850RG
VEMT2000
VEMT2500 Collector Emitter
Lead I Lead II
VSMF2890RGX01, VSMF2890GX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 23-Jan-13 7Document Number: 85163
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMF2890GX01
Drawing-No.: 9.800-5091.01-4
Leader and trailer tape:
Parts mounted
Empty (400 mm min.)
Empty (160 mm min.)
Direction of pulling out
Unreel direction
Ø 62 ± 0.5
Ø 330 ± 1
Reel
2.5± 0.5
Label posted here
coming out from reel
Tape position
X
Ø13 ± 0.5
12.4 ± 1.5
X 2:1
I
II
6000 pcs/reel
12 ± 0.3
5.5 ± 0.05 1.75 ± 0.1
2 ± 0.05
4 ± 0.1
4 ± 0.1
Ø 1.55 ± 0.05
3.05 ± 0.1
21571
technical drawings
according to DIN
specifications
Issue: 3; 18.03.10
Terminal position in tape
Devicce
VSMB2020
VSMG2020
Cathode Anode
Anode Cathode
VEMD2020
VEMD2520
VSMY2850G
VEMT2020
VEMT2520 Collector Emitter
Lead I Lead II
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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