IXTA96P085T-TRL - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C - 85 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 85 V

VGSS Continuous ±15 V

VGSM Transient ±25 V

ID25 TC= 25°C - 96 A

IDM TC= 25°C, Pulse Width Limited by TJM - 300 A

IATC= 25°C - 48 A

EAS TC= 25°C1J

PDTC= 25°C 298 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100025B(01/13)

TrenchPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA96P085T

IXTP96P085T

IXTH96P085T

VDSS = - 85V

ID25 = - 96A

RDS(on) ≤≤

≤≤

≤ 13mΩΩ

ΩΩ

Ω

Features

zInternational Standard Packages

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Diode

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

DD (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

GDS

TO-220AB (IXTP)

D (Tab)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA - 85 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V

IGSS VGS = ± 15V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V - 10 μA

TJ = 125°C - 750 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 13 mΩ

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA96P085T IXTP96P085T

IXTH96P085T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 40 66 S

Ciss 13.1 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 1175 pF

Crss 460 pF

td(on) 23 ns

tr 34 ns

td(off) 45 ns

tf 22 ns

Qg(on) 180 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC

Qgd 62 nC

RthJC 0.42 °C/W

RthCS TO-220 0.50 °C/W

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 96 A

ISM Repetitive, Pulse Width Limited by TJM - 394 A

VSD IF = - 48A, VGS = 0V, Note 1 -1.3 V

trr 55 ns

QRM 100 nC

IRM - 3.6 A

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

IF = - 48A, -di/dt = -100A/μs

VR = - 43V, VGS = 0V

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

Pins: 1 - Gate

2 - Drain

3 - Source

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

IXTA96P085T IXTP96P085T

IXTH96P085T

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 7V

- 5

V

- 6

V

Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-350

-300

-250

-200

-150

-100

-50

0

-18-16-14-12-10-8-6-4-20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 5

V

- 6

V

- 7

V

- 8

V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 7V

- 6V

- 5V

Fig. 4. R

DS(on)

Norm alized to I

D

= - 48A Value vs.

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 96A

I

D

= - 48A

Fig. 5. R

DS(on)

Normalized to I

D

= - 48A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

-350-300-250-200-150-100-500

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 6. Maximum D r ai n Cu r r en t vs.

Case Temper atu r e

-110

-90

-70

-50

-30

-10

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA96P085T IXTP96P085T

IXTH96P085T

Fig. 7. Input Admittance

-140

-120

-100

-80

-60

-40

-20

0

-6.0-5.5-5.0-4.5-4.0-3.5-3.0-2.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

-140-120-100-80-60-40-200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-300

-250

-200

-150

-100

-50

0

-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.2

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fi g . 10. Ga te C h ar g e

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 20 40 60 80 100 120 140 160 180

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 43V

I

D

= - 48A

I

G

= -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

Fi g . 12. Fo r war d -B i as Safe Op er ati n g Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms 100µs

R

DS(on)

Limit 10ms

DC

-

---

-

100ms

IXTA96P085T IXTP96P085T

IXTH96P085T

Fi g . 14. R esi sti ve Tur n -o n R i se Time vs.

Drain Current

20

24

28

32

36

40

44

-48-46-44-42-40-38-36-34-32-30-28-26-24

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 43V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 15. R esi sti ve Tur n -o n Swi tch i n g Times vs.

Gate Resistance

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 101214161820

R

G

- Ohms

t

r

- Nanoseconds

20

25

30

35

40

45

50

55

60

65

70

t

d(on)

- Nanoseconds

t r

td(on)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 43V I

D

= - 48A, - 24A

Fi g. 16. R e sisti ve Turn -o f f Switch i ng Times vs.

Jun ct i on Temp er at u re

19

20

21

22

23

24

25

26

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f - Nanoseconds

35

40

45

50

55

60

65

70

t

d(off)

- Nanoseconds

t

f td(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 43V

I

D

= - 48A

I

D

= - 24A

Fi g . 13. R esi sti ve Turn -o n R i se Time vs.

Junction Temperature

16

20

24

28

32

36

40

44

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 43V

I

D

= - 48A

I

D

= - 24A

Fi g . 18. R esi sti ve Tur n -o f f Swit chin g Times vs.

Gate Resi sta n ce

0

40

80

120

160

200

240

280

02468101214161820

R

G

- Ohms

t

f - Nanoseconds

0

50

100

150

200

250

300

350

t

d(off)

- Nanoseconds

t

f td(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 43V

I

D

= - 24A, - 48A

Fig . 17 . R esisti ve Turn - o ff S witch in g Ti mes vs.

Drain Current

42

46

50

54

58

62

66

-48-46-44-42-40-38-36-34-32-30-28-26-24

I

D

- Amperes

t

f

- Nanoseconds

19

20

21

22

23

24

25

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC

,

V

GS

= - 10V

V

DS

= - 43V

T

J

= 25ºC, 125ºC

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA96P085T IXTP96P085T

IXTH96P085T

IXYS REF: T_96P085T(A6)11-08-10-A

Fi g . 19. Maximum Tran si ent Ther mal I mpedan ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

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