TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control High-Side Switching Low On-Resistance: 8 Low Threshold: -1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-92-18RM (TO-18 Lead Form) TO-226AA (TO-92) TO-236 (SOT-23) S 1 D 1 G 2 G 2 D 3 S 3 Top View Top View Top View TP0610T (T0)* VP0610T (V0)* TP0610L VP0610L BS250 *Marking Code for TO-236 G 1 S 2 3 D Drain-Source Voltage VDS -60 -60 -60 -60 -45 Gate-Source Voltage VGS 30 30 30 30 25 -0.18 -0.12 -0.18 -0.12 -0.18 -0.11 -0.07 -0.11 -0.07 -0.8 -0.4 -0.8 -0.4 0.8 0.36 0.8 0.36 0.32 0.14 0.32 0.14 156 350 156 350 Continuous Drain Current (TJ = 150C) TA= 25C TA= 100C Pulsed Drain CurrentA Power Dissipation Dissi ation ID IDM TA= 25C TA= 100C Maximum Junction-to-Ambient Operating Junction & Storage Temperature Range PD RthJA TJ, Tstg -55 to 150 V A 0.83 150 W C/W C Notes A. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209. Applications information may also be obtained via FaxBack, request document #70611. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 1 TP0610L/T, VP0610L/T, BS250 Siliconix TP0610L/T VGS = 0 V, ID = -10 mA -70 -60 VP0610L/T BS250 Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = -100 mA -45 VDS = VGS, ID = -1 mA -1.9 -1 VDS = 0 V, VGS = "20 V Gate-Body Leakage -60 IGSS -2.4 -1 "10 -3.5 "50 TJ = 125C nA "20 VDS = -48 V, VGS = 0 V IDSS TJ = 125C -1 -1 -200 -200 VDS = -25 V, VGS = 0 V ID(on) -180 L VDS = -10 V VGS = -10 V Forward Transconductancec Diode Forward Voltage rDS(on) gfs VSD VGS = -10 V ID = -0.5 A -50 -750 -600 T VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancec L TJ = 125C mA -220 11 25 8 10 10 15 20 20 10 10 VGS = -10 V ID = -0.2 A T 6.5 VDS = -10 V, ID = -0.5 A L 125 80 80 VDS = -10 V ID = -0.1 A T 90 60 70 IS = -0.5 A, VGS = 0 V mA -0.5 VDS = -10 V, VGS = -4.5 V On-State Drain Currentc -3.5 "10 VDS = 0 V, VGS = "15 V Z G t Voltage V lt Zero Gate Drain Current -1 V W 14 mS -1.1 V Input Capacitance Ciss Output Capacitance Coss 15 60 60 10 25 25 Reverse Transfer Capacitance Crss 3 5 5 tON 8 VDS = -25 V, VGS = 0 V f = 1 MHz pF Turn-On Time td(on) tr tOFF Turn-Off Time VDD = -25 V, RL = 133 W ID ^ -0 -0.18 18 A, A VGEN = -10 V RG = 25 W 10 6 10 10 10 15 15 ns 8 10 td(off) 7 15 15 tf 8 20 20 Notes A. TA = 25C unless otherwise noted. B. For DESIGN AID ONLY, not subject to production testing. C. Pulse test: PW v300 ms duty cycle v2%. D. Switching time is essentially independent of operating temperature. VPDS06 Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 2 TP0610L/T, VP0610L/T, BS250 Siliconix TYPICAL CHARACTERISTICS (25C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive -500 -10 -400 -7 V -300 -6 V -200 -5 V -4 V -100 -2.6 V -8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = -3.0, -2.8 V -8 V VGS = -10 V -6 -2.4 V -4 -2.2 V -2 -2.0 V -3 V -1.8 V 0 0 0 -1 -2 -3 -4 0 -5 VDS - Drain-to-Source Voltage (V) -0.4 -0.8 Transfer Characteristics -1.6 -2.0 OnResistance vs. GatetoSource Voltage -100 20.0 VDS = -15 V ID = -25 mA TC = -55C 17.5 25C r DS(on)- On-Resistance ( ) -80 I D - Drain Current (mA) -1.2 VDS - Drain-to-Source Voltage (V) 125C -60 -40 -20 -0.2 A 15.0 -0.5 A 12.5 10.0 7.5 5.0 TJ = 25C 2.5 0 0 -2 -3 -4 0 -5 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) OnResistance vs. Drain Current Normalized OnResistance vs. Junction Temperature -20 2.25 r DS(on)- Drain-Source On-Resistance (Normalized) r DS(on)- Drain-Source On-Resistance ( ) 25 -1 20 15 VGS = -10 V 10 5 0 VGS = -10 V ID = -0.5 A 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 -0.15 -0.30 -0.45 ID - Drain Current (A) -0.60 -0.75 -50 -10 30 70 110 150 TJ - Junction Temperature (C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 3 TP0610L/T, VP0610L/T, BS250 Siliconix ")*"'$ !#'& (#+& -1 50 VGS = 0 V f = 1 MHz 40 -0.1 C - Capacitance (pF) I D - Drain Current (mA) TJ = 150C 100C 50C -0.01 0C 30 20 Ciss 10 Coss -55C Crss 0 -0.001 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 0 -2.1 -10 + ")! -30 -40 -50 ' '&#+#'& +* '& .#+"#&! -15.0 100 ID = -0.5 A -12.5 VDD = -25 V RG = 25 VGS = 0 to -10 V tf t - Switching Time (ns) V GS - Gate-to-Source Voltage (V) -20 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) -10.0 VDS = -30 V -48 V -7.5 -5.0 td(off) 10 tr td(on) -2.5 0 0 200 100 300 400 500 600 1 -10 Qg - Total Gate Charge (pC) -100 -1 k ID - Drain Current (A) ')%$#/ +#- )&*#&+ ")%$ %(& ,&+#'&0+'0%#&+ 0 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 Single Pulse t1 t2 2. Per Unit Base = RthJA = 156C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K t1 - Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 4 10 K