TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 0 of 20 -
www.qorvo.com
Key Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB)1: 107 W
• Linear Gain1: 17 dB
• Typical DEff3dB1: 60.8%
• Operating Voltage: 28 V
• Low thermal resistance package
• Pulse capable
Note 1: @ 3.5 GHz
Product Overview
The Qorvo TGF2929-FS is a 107 W (P3dB) discrete GaN
on SiC HEMT which operates from DC to 3.5 GHz. The
device features advanced field plate techniques to optimize
power and efficiency at high drain bias operating
conditions. This optimization can potentially lower system
costs in terms of fewer amplifier line-ups and lower thermal
management costs.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Part No.
TGF2929-FS
DC –3.5 GHz RF Power Transistor
TGF2929-FSEVB01
3.1 – 3.5 GHz Evaluation Board
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 1 of 20 -
www.qorvo.com
Absolute Maximum Ratings1
Parameter
Rating
Units
Breakdown Voltage,BVDG
+145
V
Gate Voltage Range, VG
-7 to +2
V
Drain Current
12
A
Gate Current Range, IG
See page 4.
mA
Power Dissipation, 20% DC
500 uS PW, PDISS, T = 85°C
144
W
RF Input Power, CW, T =
25 °C
+39.8
dBm
Mounting Temperature
(30 Seconds)
320 
°C
Storage Temperature
−65 to +150
°C
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions1
Parameter
Min
Typ
Max
Units
Operating Temp. Range
−40
+25
+85
 °C
Drain Voltage Range, VD
+12
+28
+50
V
Drain Bias Current, IDQ
–
260
–
mA
Peak Drain Current, ID3
–
7.2
–
A
Gate Voltage, VG4
–
−2.7
–
V
Power Dissipation, CW (PD)2
–
–
82
W
Power Dissipation, Pulsed
(PD)2, 3
–
–
140
W
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. Pulse Width = 100 uS, Duty Cycle = 20%
4. To be adjusted to desired IDQ
Pulsed Characterization – Load-Pull Performance – Power Tuned1
Parameters
Typical Values
Unit
Frequency, F
1.0
2.0
3.0
3.5
GHz
Linear Gain, GLIN
21.2
16.7
15.6
15.8
dB
Output Power at 3dB
compression point, P3dB
100
132
120
107
W
Drain Efficiency at 3dB
compression point, DEff3dB
61.0
60.4
57.6
54.4
%
Gain at 3dB compression point
18.2
13.7
12.6
12.8
dB
Notes:
1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 260 mA, Temp = +25 °C
Pulsed Characterization – Load-Pull Performance – Efficiency Tuned1
Parameters
Typical Values
Unit
Frequency, F
1.0
2.0
3.0
3.5
GHz
Linear Gain, GLIN
22.3
17.2
16.9
17.0
dB
Output Power at 3dB
compression point, P3dB
47.8
50.1
49.8
48.9
W
Drain Efficiency at 3dB
compression point, DEff3dB
76.6
66.9
68.3
60.8
%
Gain at 3dB compression point,
G3dB
19.3
14.2
13.9
14.0
dB
Notes:
1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 260 mA, Temp = +25 °C
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 2 of 20 -
www.qorvo.com
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.3 GHz1
Parameter
Min
Typ
Max
Units
Linear Gain, GLIN
–
15.0
–
 dB
Output Power at 3dB compression point, P3dB
–
106
–
W
Power-Added Efficiency at 3dB compression point,
PAE3dB
–
51.3
–
%
Gain at 3dB compression point, G3dB
–
12.0
–
dB
Notes:
1. VD = +28 V, IDQ = 260 mA, Temp = +25 °C, 100 µS, 20%
RF Characterization – Mismatch Ruggedness at 3.5 GHz1
Symbol
Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
 10:1
Notes:
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC
2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 3 of 20 -
www.qorvo.com
Maximum Gate Current
30
50
70
90
110
130
150
170
190
210
230
250
120 130 140 150 160 170 180 190 200 210 220 230
Maximum Gate Current [mA]
IR Surface Channel Temperature [°C]
Maximum Gate Current Vs. IR Surface Temperature
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 4 of 20 -
www.qorvo.com
1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Thermal and Reliability Information – Pulsed
Parameter1
Conditions
Values
Units
Thermal Resistance, IR (θJC)
85 °C back side temperature
100 W Pdiss, 1 mS PW, 5% DC
0.73
°C/W
Peak IR Surface Temperature (TCH)
158
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
100 W Pdiss, 1 mS PW, 10% DC
0.75
°C/W
Peak IR Surface Temperature (TCH)
160
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
100 W Pdiss, 1 mS PW, 20% DC
0.78
°C/W
Peak IR Surface Temperature (TCH)
163
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
100 W Pdiss, 1 mS PW, 25% DC
0.88
°C/W
Peak IR Surface Temperature (TCH)
173
°C
100.0
110.0
120.0
130.0
140.0
150.0
160.0
170.0
180.0
190.0
200.0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Peak IR Surface Temperature (°C)
Pulse Width (sec)
Peak IR Surface Temperature
Package base fixed at 85°C, Pdiss = 100 W
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 5 of 20 -
www.qorvo.com
1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Thermal and Reliability Information – CW
Parameter1
Conditions
Values
Units
Thermal Resistance, IR (θJC)
85 °C back side temperature
28.8 W Pdiss
1.08
°C/W
Peak IR Surface Temperature (TCH)
116
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
57.6 W Pdiss
1.15
°C/W
Peak IR Surface Temperature (TCH)
151
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
86.4 W Pdiss
1.20
°C/W
Peak IR Surface Temperature (TCH)
189
°C
Thermal Resistance, IR (θJC)
85 °C back side temperature
115 W Pdiss
1.28
°C/W
Peak IR Surface Temperature (TCH)
232
°C
80
100
120
140
160
180
200
220
240
010 20 30 40 50 60 70 80 90 100 110 120
Peak IR Surface Temperature, °C
CW Power Dissipation, W
Peak IR SurfaceTemperature vs. CW Power
Package base fixed at 85°C
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 6 of 20 -
www.qorvo.com
Load-Pull Smith Charts1, 2
Notes:
1. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.
2. See page 15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.6
1.8
2
0.3
0.4
0.5
0.6
1GHz, Load-pull
49.7 49.2 48.7
19.9
18.9
17.9
75.4
70.4
65.4
60.4
• Max Power is 50dBm
at Z = 2.241+0.492i
= -0.6764+0.0592i
• Max Gain is 20.4dB
at Z = 1.648+2.661i
= -0.6861+0.3361i
• Max DEff is 76.6%
at Z = 2.391+3.013i
= -0.588+0.3395i
Zo = 11.7
3dB Compression Referenced to Peak Gain
Zs(1fo) = 1.45-0.27i
Zs(2fo) = 6.54+24.95i
Zs(3fo) = 3.67-16.91i
Power
Gain
DEFF
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 7 of 20 -
www.qorvo.com
Load-Pull Smith Charts1, 2
Notes:
1. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.
2. See page 15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
-0.4
-0.3
2GHz, Load-pull
51
50.5
50
14.4
13.4
12.4
65.3
60.3
55.3
• Max Power is 51.2dBm
at Z = 2.555-1.967i
= -0.6108-0.2223i
• Max Gain is 15.1dB
at Z = 3.421+0.937i
= -0.5416+0.0955i
• Max DEff is 66.9%
at Z = 1.679-0.781i
= -0.7431-0.1018i
Zo = 11.7
3dB Compression Referenced to Peak Gain
Zs(1fo) = 1.33-4.22i
Zs(2fo) = 1.06+1.79i
Zs(3fo) = 2.31+1.72i
Power
Gain
DEFF
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 8 of 20 -
www.qorvo.com
Load-Pull Smith Charts1, 2
Notes:
1. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.
2. See page 15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
-0.4
-0.3
3GHz, Load-pull
50.5 50 49.5
13.7
12.7
11.7
64.8 59.8 54.8
• Max Power is 50.8dBm
at Z = 2.794-4.043i
= -0.4979-0.4178i
• Max Gain is 14.4dB
at Z = 1.705-1.63i
= -0.7202-0.2092i
• Max DEff is 68.3%
at Z = 1.752-2.538i
= -0.6797-0.317i
Zo = 11.7
3dB Compression Referenced to Peak Gain
Zs(1fo) = 5.16-8.3i
Zs(2fo) = 3.73-4.83i
Zs(3fo) = 37.97-7.46i
Power
Gain
DEFF
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 9 of 20 -
www.qorvo.com
Load-Pull Smith Charts1, 2
Notes:
3. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.
4. See page 15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-0.5
-0.4
-0.3
3.5GHz, Load-pull
50.3 49.8 49.3
13.9
12.9
11.9
59.4
54.4 49.4
• Max Power is 50.3dBm
at Z = 2.992-5.16i
= -0.4178-0.4979i
• Max Gain is 14dB
at Z = 1.839-3.661i
= -0.6106-0.4355i
• Max DEff is 60.8%
at Z = 1.839-3.661i
= -0.6106-0.4355i
Zo = 11.7
3dB Compression Referenced to Peak Gain
Zs(1fo) = 13-0.58i
Zs(2fo) = 7.62+3.24i
Zs(3fo) = 41.24+12.78i
Power
Gain
DEFF
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 10 of 20 -
www.qorvo.com
Typical Performance – Load-Pull Drive-up1, 2
Notes:
1. 100 µS PW, 20% DC pulsed signal, VD = 28 V, IDQ = 260 mA
2. See page 15 for load-pull and source-pull reference planes where the performance was measured.
44 45 46 47 48 49 50 51
15
16
17
18
19
20
21
22
23
24
25
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
1 GHz - Power Tuned
Zs(1fo) = 1.45-0.27i
Zs(2fo) = 6.54+24.95i
Zs(3fo) = 3.67-16.91i
Zl(1fo) = 2.24+0.49i
Zl(2fo) = 47.03+37.94i
Zl(3fo) = 1.99-6.75i
44 45 46 47 48 49 50 51
15
20
25
30
35
40
45
50
55
60
65
PAE [%]
Gain
PAE
39 40 41 42 43 44 45 46 47 48 49 50 51 52
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
2 GHz - Power Tuned
Zs(1fo) = 1.33-4.22i
Zs(2fo) = 1.06+1.79i
Zs(3fo) = 2.31+1.72i
Zl(1fo) = 2.56-1.97i
Zl(2fo) = 3.12+9.97i
Zl(3fo) = 25.25-6.15i
39 40 41 42 43 44 45 46 47 48 49 50 51 52
15
20
25
30
35
40
45
50
55
60
65
PAE [%]
Gain
PAE
40 41 42 43 44 45 46 47 48 49 50 51
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
3 GHz - Power Tuned
Zs(1fo) = 5.16-8.3i
Zs(2fo) = 3.73-4.83i
Zs(3fo) = 37.97-7.46i
Zl(1fo) = 2.79-4.04i
Zl(2fo) = 3.92+1.95i
Zl(3fo) = 38.23-1.75i
40 41 42 43 44 45 46 47 48 49 50 51
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
38 39 40 41 42 43 44 45 46 47 48 49 50 51
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
3.5 GHz - Power Tuned
Zs(1fo) = 13-0.58i
Zs(2fo) = 7.62+3.24i
Zs(3fo) = 41.24+12.78i
Zl(1fo) = 2.99-5.16i
Zl(2fo) = 2.37+2.69i
Zl(3fo) = 18.6+27i
38 39 40 41 42 43 44 45 46 47 48 49 50 51
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 11 of 20 -
www.qorvo.com
Typical Performance – Load-Pull Drive-up1, 2
Notes:
1. 100 µS PW, 20% DC pulsed signal, VD = 28 V, IDQ = 260 mA
2. See page 15 for load-pull and source-pull reference planes where the performance was measured.
46 46.5 47 47.5 48
15
16
17
18
19
20
21
22
23
24
25
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
1 GHz - Efficiency Tuned
Zs(1fo) = 1.45-0.27i
Zs(2fo) = 6.54+24.95i
Zs(3fo) = 3.67-16.91i
Zl(1fo) = 2.39+3.01i
Zl(2fo) = 9.84-27.64i
Zl(3fo) = 1.46-0.13i
46 46.5 47 47.5 48
40
45
50
55
60
65
70
75
80
85
90
PAE [%]
Gain
PAE
40 41 42 43 44 45 46 47 48 49 50 51
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
2 GHz - Efficiency Tuned
Zs(1fo) = 1.33-4.22i
Zs(2fo) = 1.06+1.79i
Zs(3fo) = 2.31+1.72i
Zl(1fo) = 1.68-0.78i
Zl(2fo) = 2.98+13.06i
Zl(3fo) = 17.09-11.75i
40 41 42 43 44 45 46 47 48 49 50 51
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
41 42 43 44 45 46 47 48 49 50
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
3 GHz - Efficiency Tuned
Zs(1fo) = 5.16-8.3i
Zs(2fo) = 3.73-4.83i
Zs(3fo) = 37.97-7.46i
Zl(1fo) = 1.75-2.54i
Zl(2fo) = 3.2+3.58i
Zl(3fo) = 39.92-5.08i
41 42 43 44 45 46 47 48 49 50
25
30
35
40
45
50
55
60
65
70
75
PAE [%]
Gain
PAE
39 40 41 42 43 44 45 46 47 48 49
10
11
12
13
14
15
16
17
18
19
20
Output Power [dBm]
Gain [dB]
Gain and DEFF vs. Output Power
3.5 GHz - Efficiency Tuned
Zs(1fo) = 13-0.58i
Zs(2fo) = 7.62+3.24i
Zs(3fo) = 41.24+12.78i
Zl(1fo) = 1.84-3.66i
Zl(2fo) = 1.94+3.22i
Zl(3fo) = 15.04+32i
39 40 41 42 43 44 45 46 47 48 49
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 12 of 20 -
www.qorvo.com
Power Drive-up Performance Over Temperatures Of 3.1 – 3.5 GHz EVB1
Notes:
1. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
3.1 3.2 3.3 3.4 3.5
G3dB [dB]
Frequency [GHz]
G3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
50
60
70
80
90
100
110
120
130
140
150
3.1 3.2 3.3 3.4 3.5
P3dB [W]
Frequency [GHz]
P3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
0
10
20
30
40
50
60
70
80
90
100
3.1 3.2 3.3 3.4 3.5
PAE3dB [%]
Frequency [GHz]
PAE3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 13 of 20 -
www.qorvo.com
Power Drive-up Performance At 25 °C Of 3.1 – 3.5 GHz EVB1
Notes:
1. VD = 28 V, IDQ = 260 mA, 100 µS PW, 20% DC
5.0
6.5
8.0
9.5
11.0
12.5
14.0
15.5
17.0
18.5
20.0
50
60
70
80
90
100
110
120
130
140
150
3.1 3.2 3.3 3.4 3.5
G3dB [dB]
P3dB [W]
Frequency [GHz]
P3dB and G3dB vs. Frequency @ 25°C
P3dB
G3dB
0
10
20
30
40
50
60
70
80
90
100
3.1 3.2 3.3 3.4 3.5
PAE [%]
Frequency [GHz]
PAE vs. Frequency at 25°C
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 14 of 20 -
www.qorvo.com
Notes:
1. The TGF2929-FS will be marked with the “TGF2929-FS” designator and a lot code marked below the part designator. The
“YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly
lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number represents the last three
digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the
production lot number.
Pin Configuration and Description, and Package Marking1
Pin Description
Pin
Symbol
Description
1
VD / RF OUT
Drain voltage / RF Output
2
VG / RF IN
Gate voltage / RF Input
3
Base
Source connected to ground
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 15 of 20 -
www.qorvo.com
Package Dimensions1, 2, 3, 4
Notes:
1. Unless otherwise noted, the tolerance is ±0.005 inch.
2. Package metal base and leads are gold plated.
3. Part is epoxy sealed.
4. Part meets Industry NI360 footprint.
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 16 of 20 -
www.qorvo.com
Schematic – 3.1 – 3.5 GHz EVB
Bias-up Procedure
Bias-down Procedure
1. Set VG to -4 V.
1. Turn off RF signal.
2. Set ID current limit to 300 mA.
2. Turn off VD
3. Apply 28 V VD.
3. Wait 2 seconds to allow drain capacitor to discharge
4. Slowly adjust VG until ID is set to 260 mA.
4. Turn off VG
5. Set ID current limit to 2 A
6. Apply RF.
1
2
3
FET
CAP
ID=C1
RES
ID=R1
CAP
ID=C2
CAP
ID=C3
IND
ID=L1
RES
ID=R2
CAP
ID=C4
IND
ID=L2
CAP
ID=C5
CAP
ID=C6
CAP
ID=C7
CAP
ID=C8
DC_V
ID=Vg DC_V
ID=Vd
PORT
P=1
Z=50 Ohm PORT
P=2
Z=50 Ohm
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 17 of 20 -
www.qorvo.com
3.1 – 3.5 GHz EVB1
Notes:
1. PCB Material: RO4350B, 20 mil thickness, 1 oz copper cladding
Bill Of material – 3.1 – 3.5 GHz EVB
Ref Des
Value
Qty
Manufacturer
Part Number
R1
100 Ω
1
Vishay/Dale
CRCW0603100RJNEA
C1, C2
5.6 pF
2
ATC
600S5R6BT
C3
1.0 pF
1
ATC
600S1R0BT
L1
22 nH
1
Coilcraft
0805CS-220X-LB
R2
10 Ω
1
Vishay/Dale
CRCW060310R0JNEA
C4
10 uF
1
Murata
C1632X5R0J106M130AC
L2
12 nH
1
Coilcraft
A04T_L
C5
2400 pF
1
Murata
C08BL242X-5UN-X0T
C6
1000 pF
1
ATC
800B102JT50XT
C7
220 uF
1
United Chemi-Con
EMVY500ADA221MJA0G
C8
15 pF
1
ATC
600S150JT250XT
C1
11
R1 C3 L1
R2
C4 L2
C5
C6
C7
C8
C2
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 18 of 20 -
www.qorvo.com
Recommended Solder Temperature Profile
TGF2929-FS
100W, 28V, DC–3.5 GHz, GaN RF Power Transistor
Datasheet Rev. B, August 17, 2018 | Subject to change without
notice
- 19 of 20 -
www.qorvo.com
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM)
Class 1A
700 V
ANSI/ESD/JEDEC JS-001
ESD – Charged Device Model (CDM)
Class C3
1000 V
ANSI/ESD/JEDEC JS-002
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com Tel: +1.844.890.8163
Email: customer.support@qorvo.com
For technical questions and application information: Email: info-products@qorvo.com
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Package lead plating is NiAu. Au thickness is 60 microinches.
Pb