ITT SEMICOND/ INTERMETALL b1E D MM 4682711 0003200 T48 MMIST LL103A ...LL103C Silicon Schottky Barrier Diodes = 3.5201 -9/Cathode Mark for general purpose applications i 8 7 _ [ a The LL103A, B, C is a metal on silicon Schottky barrier device t = which is protected by a PN junction guard ring. The low forward 93201 voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and tow logic level applications. Other uses are for Glass case MiniMELF click suppression, efficient full wave bridges in telephone sub- sets, and as blocking diodes in rechargeable low voltage batiery systems. This diode is also available in DO-35 case with the type designa- tion SD103A, B, C. These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings Weight approx. 0.05 g Dimensions in mm Symbol Value Unit Peak Inverse Voltage LL103A VarM 40 Vv LL103B VaRM 30 Vv LL103C VaRM 20 V Power Dissipation (Infinite Heatsink) Prot 4001) mw T, = % from dody derates at 4 mW/C to 0 at 125 C Junction Temperature T, 125 C Storage Temperature Range Ts 55 to +125 S Single Cycle Surge l-sm 15 A 60 Hz sine wave 1) Valid provided that electrodes are kept at ambient temperature. 132 ITT SEMICOND/ INTERMETALL BLE D MM 468271) 0003201 914 MMISI Characteristics at T, = 25 C Symbol Min. Typ. Max. Unit Leakage Current at Vp = 30V LL103A ln - - 5 pA at Vp = 20V LL103B Ip - - 5 pA at Vp = 10V LLi03C lp - - 5 pA Forward Voltage Drop at lp = 20mA Ve - - 0.37 Vv at Ir = 200 mA Ve - 0.6 Vv Junction Capacitance Crot - 50 - pF at Va = OV, f = 1 MHz Reverse Recovery Time tre - 10 - ns at le = Ip = 50 mA to 200 mA, recover to 0.1 Ip Typical variation of fwd. current Typical high current forward vs. fwd. voltage for primary conduction conduction curve through the Schottky barrier tp = 300 ys, duty cycle = 2% mA LL103 A LL103 103 5 yf 1- 10 A 1 4 10 / 3 | ] | 2 / 10! 1 A Le C 102 0 7 0 0.5 lv 0 os 1 Sv Vp Ve 133 ITT SEMICOND/ INTERMETALL b1E D LL103A ...LL103C 4642711 0003202 850 MEISI Typical non repetitive forward surge current versus pulse width Rectangular pulse A LL103 30 " N\ 10? 107% 197 4 10 107 10ms tp Typical variation of reverse current at various temperatures MA LL103 Tamb=125 C 103 102 10-1 0 10 20 30 40 50 V Blocking voltage deration versus temperature at various average forward currents LL103 | Vp 40 oN T-=400mA 200mA \100mA 20 0 100 200 C Tamb Typical capacitance versus reverse voltage LL103 0 10 20 30 40 50V