VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES VSMY2940RGX01 VSMY2940GX01 * Package type: surface-mount * Package form: GW, RGW * Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 * Peak wavelength: p = 940 nm * AEC-Q101 qualified * High radiant power * Very high radiant intensity * Angle of half intensity: = 10 DESCRIPTION * Suitable for high pulse current operation SurfLightTM As part of the portfolio, the VSMY2940 series are infrared, 940 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). * Terminal configurations: gullwing or reverse gullwing * Package matches with detector VEMD2000X01 series * Floor life: 4 weeks, MSL 2a, according to J-STD-020 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * Miniature light barrier * Photointerrupters * Optical switch * Emitter source for proximity sensors PRODUCT SUMMARY Ie (mW/sr) (deg) P (nm) tr (ns) VSMY2940RGX01 145 10 940 10 VSMY2940GX01 145 10 940 10 COMPONENT Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2940RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2940GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note * MOQ: minimum order quantity Rev. 1.0, 08-Nov-17 Document Number: 84583 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage IF 100 mA Peak forward current Forward current tp/T = 0.5, tp = 100 s IFM 200 mA Surge forward current tp = 100 s IFSM 1 A PV 170 mW Power dissipation Junction temperature Operating temperature range Tj 100 C Tamb -40 to +85 C Storage temperature range Soldering temperature Thermal resistance junction-to-ambient Tstg -40 to +100 C According to Fig. 10, J-STD-020 Tsd 260 C J-STD-051, soldered on PCB RthJA 250 K/W 100 160 140 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 RthJA = 250 K/W 120 100 80 60 40 20 80 RthJA = 250 K/W 60 40 20 0 0 0 20 40 60 80 0 100 20 40 60 80 100 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF - 1.4 1.8 V IF = 1 A, tp = 100 s VF - 2.5 - V IF = 100 mA TKVF - -0.7 - mV/K Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power IR Not designed for reverse operation UNIT A VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 55 - pF IF = 100 mA, tp = 20 ms Ie 75 145 215 mW/sr mW/sr IF = 1 A, tp = 100 s Ie - 1000 - IF = 100 mA, tp = 20 ms e - 55 - mW IF = 100 mA TKe - -0.2 - %/K - 10 - deg Angle of half intensity Peak wavelength IF = 100 mA p 920 940 960 nm Spectral bandwidth IF = 100 mA - 50 - nm Temperature coefficient of p IF = 100 mA TKp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 10 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 10 - ns Rev. 1.0, 08-Nov-17 Document Number: 84583 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 1000 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 IF = 100 mA tp = 20 ms 110 105 100 95 90 85 2.6 -60 -40 -20 VF - Forward Voltage (V) IF = 100 mA tp = 20 ms 105 100 95 90 20 40 60 60 80 100 80 100 100 IF = 100 mA 80 60 40 20 0 800 850 900 950 1000 1050 - Wavelength (nm) Tamb - Ambient Temperature (C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Wavelength 0 Ie, rel - Relative Radiant Intensity 10 Ie,rel - Relative Radiant Intensity (Ie /Ie (100 mA)) 40 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) VF, rel - Relative Forward Voltage (%) 110 0 20 Tamb - Ambient Temperature (C) Fig. 3 - Forward Current vs. Forward Voltage -60 -40 -20 0 tp = 100 s 1 0.1 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 - Angular Displacement IF - Forward Current (mA) tp = 100 s 115 0.01 1 10 100 1000 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 5 - Relative Radiant Intensity vs. Forward Current Rev. 1.0, 08-Nov-17 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84583 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 C 255 C 240 C 217 C FLOOR LIFE 245 C Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (C) 250 150 Max. 120 s 100 Max. 100 s Floor life: 4 weeks Conditions: Tamb < 30 C, RH < 60 % 100 Max. ramp down 6 C/s Moisture sensitivity level 2a, according to J-STD-020. Max. ramp up 3 C/s 50 DRYING 10 0 0 50 100 150 200 250 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %. 300 Time (s) 19841 Fig. 9 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 PACKAGE DIMENISONS in millimeters: VSMY2940RGX01 O 1.8 0.1 0.3 1.6 Z 0.19 2.77 0.2 0.05 0.1 0.4 2.2 2.2 5.8 0.2 exposed copper 1.1 0.1 Z 20:1 0.254 2.3 0.2 0.4 0.5 2.3 0.2 0.75 anode pin ID 1.7 cathode solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances 0.1 O 2.3 0.1 6.7 Drawing-No.: 6.544-5391.03-4 Issue: 2; 19.09.14 Rev. 1.0, 08-Nov-17 Document Number: 84583 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2940GX01 O 1.8 0.19 1.6 X 0.05 2.77 0.2 0.3 0.4 2.2 2.2 4.2 0.2 X 20:1 exposed copper 0.6 0.75 anode pin ID solder pad proposal acc. IPC 7351 0.254 2.3 0.2 0.4 0.5 2.3 0.2 cathode technical drawings according to DIN specifications Not indicated tolerances 0.1 2.45 5.15 Drawing-No.: 6.544-5383.03-4 Issue: 2; 19.09.14 Rev. 1.0, 08-Nov-17 Document Number: 84583 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2940RGX01 Reel X unreel direction O 13 0.5 O 330 1 .5 0 O 62 0.5 2.5 tape position coming out from reel 6000 pcs/reel technical drawings according to DIN specifications label posted here 12.4 1.5 Leader and trailer tape empty (160 mm min.) parts mounted direction of pulling out O 1.55 0.05 I 3.05 0.1 4 0.1 X 2:1 4 0.1 2 0.05 12 0.3 Lead I Lead II Device VEMT2000 Collector Emitter VEMT2500 VEMD2000 VEMD2500 Cathode Anode VSMB2000 VSMG2000 VSMF2890RG VSMY2850RG Anode Cathode VSMY2940RG 5.5 0.05 Terminal position in tape 1.75 0.1 empty (400 mm min.) II Drawing-No.: 9.800-5100.01-4 Issue: 4; 19.09.14 Rev. 1.0, 08-Nov-17 Document Number: 84583 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2940RGX01, VSMY2940GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2940GX01 Reel X unreel direction O 13 0.5 O 330 1 .5 0 O 62 0.5 2.5 tape position coming out from reel 6000 pcs/reel technical drawings according to DIN specifications label posted here 12.4 1.5 Leader and trailer tape empty (160 mm min.) parts mounted direction of pulling out O 1.55 0.05 Lead I Lead II Cathode Anode Collector Emitter Anode Cathode I 3.05 0.1 4 0.1 X 2:1 4 0.1 2 0.05 12 0.3 Device VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMF2890G VEMT2020 VEMT2520 VSMY2850G VSMY2940G 5.5 0.05 Terminal position in tape 1.75 0.1 empty (400 mm min.) II Drawing-No.: 9.800-5091.01-4 Issue: 5; 19.09.14 Rev. 1.0, 08-Nov-17 Document Number: 84583 7 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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