2005-10-13
1
BFR35AP
12
3
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR35AP GEs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2.5
Collector current IC45 mA
Base current IB4
Total power dissipation1)
TS ≤ 48°C Ptot 280 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 365 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-10-13
2
BFR35AP
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 2.5 V, IC = 0 IEBO - - 100 µA
DC current gain-
IC = 15 mA, VCE = 8 V, pulse measured hFE 70 100 140 -
2005-10-13
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BFR35AP
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz fT3.5 5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.39 0.55 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.23 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.64 -
Noise figure
IC = 2 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.4
2
-
-
dB
Power gain, maximum available1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt,
ZL = ZLopt, f = 900 MHz
f = 1.8 GHz
Gma
-
-
16
10.5
-
-
Transducer gain
IC = 15 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
13
7.5
-
-
dB
1Gma = |S21/S12| (k-(k2-1)1/2)
2005-10-13
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BFR35AP
Package SOT23
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
12
s
Manufacturer
Date code (Year/Month)
Type code
EH
s
2003, July
BCW66
Example
37
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
2005-10-13
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BFR35AP
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
