21314HK TC-00003090/D1813HK PE No. A2267-1/6
Semiconductor Components Industries, LLC, 2014
February, 2014
http://onsemi.com
EMH2418R
Features
Low On-resistance
2.5V drive
Common-Drain Type
Protection di ode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free com pl i ance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Value Unit
Drain to Source Voltage VDSS 24 V
Gate to Source Voltage VGSS 12 V
Drain Current (DC) ID 9A
Drain Current (Pulse)
PW10s, duty cycle1%
IDP 40 A
Power Dissipation
When mounted on ceram i c substrate(900mm
2
0.8mm) 1unit
PD 1.3 W
Total Dissipation
When mounted on ceram i c substrate(900mm
2
0.8mm)
PT 1.4 W
JunctionTemperature Tj 150 C
Storage Temperature Tstg - 55 to
+150 C
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient
When mounted on ceram i c substrate(900mm
2
0.8mm)
RJA 96 C/W
Ordering & Package Information
Device Package Shipping
EMH2418R-TL-H
Pb-free and
Halogen Free EMH8 3,000
pcs. / reel
Orderin
g
numbe
r
: ENA2267A
Electrical Connection
N-channel
N-Channel Power MOSFET
24V, 9A, 15mΩ, Dual EMH8
8765
1234
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
C onditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Packing Type:TL
TL
Marking
LT
LOT No.
EMH2418R
No.A2267-2/6
Electrical Characteristics at Ta 25C
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=1mA, VGS=0V 24 V
Zero-Gate Voltage Drain Current IDSS V
DS=20V, VGS=0V 1 A
Gate to Source Leakage Current IGSS V
GS=±8V, VDS=0V
1A
Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 0.5 1.3 V
Forward Transconductance gFS V
DS=10V, ID=4A 4 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=4A, VGS=4.5V 9.6 12 15 m
RDS(on)2 ID=4A, VGS=4.0V 10.0 12.5 16.3 m
RDS(on)3 ID=4A, VGS=3.1V 11.3 14.2 20 m
RDS(on)4 ID=2A, VGS=2.5V 13.2 16.5 23.1 m
Turn-ON Delay Time td(on) See specified Test Circuit. 120 ns
Rise Time tr 170 ns
Turn-OFF Delay Time td(off) 17500 ns
Fall Time tf 22600 ns
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=9A 4.4 nC
Gate to Source Charge Qgs 0.9 nC
Gate to Drain “Miller” Charge Qgd 0.7 nC
Forward Diode Voltage VSD I
S=9A, VGS=0V 0.8 1.2 V
Switching Time Test Circuit
PW=10s
D.C.1%
P.G 50
G
S
D
ID=4A
RL=2.5
VDD=10V
VOUT
EMH2418R
VIN
4.5V
0V
VIN
Rg=1k
Rg
EMH2418R
No.A2267-3/6
EMH2418R
No.A2267-4/6
EMH2418R
No.A2267-5/6
Package Dimensions
EMH2418R-TL-H
SOT-383FL/EMH8
CASE419AT
ISSUE O
Unit : mm
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain
6: Drain
7: Drain
8: Drain
Soldering Footprint
0.4
0.3
0.5
1.9
EMH2418R
PS No.A2267-6/6
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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Note on usage : Since the EMH2418R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
