IGP10N60T
TrenchStop® Series q
Power Semiconductors 1 Rev. 2.3 Sep. 07
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Variable Speed Drive for washing machines and air
conditioners
- induction cooking
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Code Package
IGP10N60T 600V 10A 1.5V 175°C G10T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
20
10
Pulsed collector current, tp limited by Tjmax ICpuls 30
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
- 30
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC 5 µs
Power dissipation TC = 25°C Ptot 110 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 2 Rev. 2.3 Sep. 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 1.35
Thermal resistance,
junction – ambient
RthJA 62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.2mA 600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=10A
Tj=25°C
Tj=175°C
-
-
1.5
1.8
2.05
-
Gate-emitter threshold voltage VGE(th) IC=0.3mA,VCE=VGE 4.1 4.6 5.7
V
Zero gate voltage collector current
ICES VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=10A - 6 - S
Integrated gate resistor RGint none
Dynamic Characteristic
Input capacitance Ciss - 551 -
Output capacitance Coss - 24 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 17 -
pF
Gate charge QGate VCC=480V, IC=10A
VGE=15V
- 62 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE TO-220-3-1
- 7 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤5µs
VCC = 400V,
Tj = 25°C
- 100 - A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 3 Rev. 2.3 Sep. 07
Switching Characteristic 3), Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 12 -
Rise time tr - 8 -
Turn-off delay time td(off) - 215 -
Fall time tf - 38 -
ns
Turn-on energy Eon - 0.16 -
Turn-off energy Eoff - 0.27 -
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=23Ω,
L
σ
2)=60nH,
C
σ
2)=40pF
Energy losses include
“tail” and diode
reverse recovery. - 0.43 -
mJ
Switching Characteristic 3), Inductive Load, at Tj=175 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 10 -
Rise time tr - 11 -
Turn-off delay time td(off) - 233 -
Fall time tf - 63 -
ns
Turn-on energy Eon - 0.26 -
Turn-off energy Eoff - 0.35 -
Total switching energy Ets
Tj=175°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG= 23Ω
L
σ
2)=60nH,
C
σ
2)=40pF
Energy losses include
“tail” and diode
reverse recovery. - 0.61 -
mJ
2) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
3) Diode from device IKP10N60T
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 4 Rev. 2.3 Sep. 07
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
5A
10A
15A
20A
25A
30A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,1A
1A
10A
20µs
100µs
500µs
DC
tp=1µs
5µs
10ms
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
20W
40W
60W
80W
100W
120W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Ic
Ic
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 5 Rev. 2.3 Sep. 07
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V
0A
5A
10A
15A
20A
25A
30A
15V
6V
8V
10V
12V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
5A
10A
15A
20A
25A
30A
15V
6V
8V
10V
12V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V
0A
5A
10A
15A
20A
25A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=10A
IC=20A
IC=5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 6 Rev. 2.3 Sep. 07
t, SWITCHING TIMES
0A 5A 10A 15A 20A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
10Ω 20Ω 30Ω 40Ω 50Ω
1ns
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 23,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
1ns
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ. max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG=23,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 7 Rev. 2.3 Sep. 07
E, SWITCHING ENERGY LOSSES
0A 5A 10A 15A
0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJ Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
10Ω 20Ω 30Ω 40Ω 50Ω
0,0 mJ
0,2 mJ
0,4 mJ
0,6 mJ
0,8 mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
0,6mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG = 23,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, RG = 23,
Dynamic test circuit in Figure E)
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 8 Rev. 2.3 Sep. 07
VGE, GATE-EMITTER VOLTAGE
0nC 20nC 40nC 60nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=10 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC
(
sc
)
, short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
25A
50A
75A
100A
125A
150A
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 9 Rev. 2.3 Sep. 07
ZthJC, TRANSIENT THERMAL RESISTANCE
10
µ
s 100
µ
s 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
R,(K/W)
τ
, (s)
0.2911 6.53*10-2
0.4092 8.33*10-3
0.5008 7.37*10-4
0.1529 7.63*10-5
C1=
τ
1/R1
R1R2
C2=
τ
2
/
R2
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 10 Rev. 2.3 Sep. 07
PG-TO-220-3-1
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 11 Rev. 2.3 Sep. 07
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=60nH
an d Stray capacity Cσ =40pF.
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IGP10N60T
TrenchStop® Series q
Power Semiconductors 12 Rev. 2.3 Sep. 07
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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