2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) VCB=150V 100max A V IEBO VEB=5V 100max A IC=25mA 150min V hFE 50min VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25C) W fT VCE=12V, IE=-1A 70typ MHz Tj 150 C COB VCB=80V, f=1MHz 60typ pF -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min 2 PC RL () IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) 12 5 -5 500 -500 0.2typ 1.4typ 0.35typ 40mA I B =20mA 2 0 1 2 3 I C =10A 1 2 5A 0 4 0 0.5 Collector-Emitter Voltage V C E (V) 1.0 1.5 0 2.0 h FE - I C Characteristics (Typical) (V C E =4V) 200 1 25C 100 -30C 50 20 0.02 10 0.05 0.1 0.5 f T - I E Characteristics (Typical) 1 5 10 j-a - t Characteristics 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 2 3 Collector Current I C (A) Collector Current I C (A) 120 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 50 P c - T a Derating 100 30 m s 2 10 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) -6 si -1 50 at 0.2 -0.1 he Without Heatsink Natural Cooling 0.5 20 0 -0.02 1 ite 40 C fin 60 D 5 In 80 ith Collector Curren t I C ( A) 10 Typ W M aximum Power Dissipa ti on P C (W) 10 100 Cu t-off Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 125C 0.1 1 Base-Emittor Voltage V B E (V) h FE - I C Temperature Characteristics (Typical) (V C E =4V) 20 0.02 0 Base Current I B (A) 200 100 4 p) 4 6 em 80mA 2 eT 12 0m A 6 8 as A (C A 160m (V C E =4V) 10 3 5C 200m 8 Collector Current I C (A) A 12 300m 1.4 E I C - V BE Temperature Characteristics (Typical) Collector Current I C (A) mA Collector-Emitter Saturation Voltage V CE(s a t) (V ) 400 C Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) 10 0.65 +0.2 -0.1 5.450.1 B VB2 (V) I C - V CE Characteristics (Typical) 0 5.450.1 IC (A) j - a ( C/W) 60 2 3 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) VCC (V) o3.20.1 b IB Tstg a p) V(BR)CEO A Tem V 10 se 5 IC (Ca VEBO 2.00.1 C 150 4.80.2 -30 VCEO 15.60.4 9.6 C V 25 150 1.8 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25C) 2SC2837 Unit 5.00.2 Electrical Characteristics Conditions 2SC2837 19.90.3 Symbol 4.0 Absolute maximum ratings (Ta=25C) Application : Audio and General Purpose 4.0max LAPT 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 59