59
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1186)
Application
:
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC2837
150
150
5
10
2
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■
Typical Switching Characteristics (Common Emitter)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC2837
100
max
100
max
150
min
50
min
∗
2.0
max
70
typ
60
typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=3V
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–1A
V
CB
=80V, f=1MHz
V
CC
(V)
60
R
L
(
Ω
)
12
I
C
(A)
5
V
B2
(V)
–5
I
B2
(mA)
–500
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.4typ
t
f
(
µ
s)
0.35typ
I
B1
(mA)
500
LAPT
2SC2837
(Ta=25°C)
(Ta=25°C)
I
C
–
V
CE
Characteristics
(Typical)
h
FE
–
I
C
Characteristics
(Typical)
h
FE
–
I
C
Temperature
Characteristics
(Typical)
θ
j-a
–
t
Characteristics
I
C
–
V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)
–
I
B
Characteristics
(Typical)
Pc
–
T
a
Derating
Safe Operating Area
(Single Pulse)
f
T
–
I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
1.0
2.0
1.5
Base Current I
B
(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
=10A
5A
0
10
2
6
4
8
02
1
Base-Emittor Voltage V
BE
(V)
Collector Current I
C
(A)
(V
CE
=4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
0.2
1
3
0.5
1
10
100
1000
2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
100
50
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
2
10
100
200
0.2
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
10ms
DC
Without Heatsink
Natural Cooling
0.02
0.1
1
10
20
50
100
200
Collector Current I
C
(A)
DC Current Gain h
FE
(V
CE
=4V)
Typ
0
0
2
4
6
10
8
2
13
4
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
300mA
200mA
160mA
120mA
80mA
40mA
I
B
=20mA
400mA
(V
CE
=4V)
0.02
0.1
0.5
0.05
10
5
1
Collector Current I
C
(A)
DC Current Gain h
FE
20
50
100
200
125˚C
25˚C
–30˚C
–0.02
–0.1
–1
–6
40
20
0
120
100
80
60
Cut-off Frequency f
T
(MH
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
∗
h
FE
Rank
O(50 to 100), P(70 to 140), Y(90 to 180)
Suppliers Inquiry
Previous
Next
Link
Name *
Reason for Contact
General Inquiry
Place Order
Report Issue
Target Price (Option)
Email Address *
Message *
BOM / Attach Files (Option)
Maximum allowed file size is 10MB