PHOTOCOUPLER
PS2832-1,-4,PS2833-1,-4
HIGH COLLECTOR TO EMITTER VOLTAGE
4, 16-PIN SSOP PHOTOCOUPLER −NEPOC Series−
Document No. PN10257EJ03V0DS (3rd edition)
Date Published November 2008 NS
PS2832-1, PS2833-1
PS2832-4, PS2833-4
PIN CONNECTION
(Top View)
1. Anode
2. Cathode
3. Emitter
4. Collector
Anode
Cathode
Emitter
Collector
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
43
12
1234 5 678
16 15 14 13 12 11 10 9
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The PS2832-1, -4 and PS2833-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an
NPN silicon darlington-connected phototransistor.
The package is a Shrink SOP (Small Outline Package) type for high density mounting applications.
FEATURES
• High collector to emitter voltage (VCEO = 300 V: PS2832-1, -4)
(VCEO = 350 V: PS2833-1, -4)
• Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High current transfer ratio (CTR = 2 000% TYP.)
• Ordering number of tape product: PS2832-1-F3, F4, PS2832-4-F3, F4
PS2833-1-F3, F4, PS2833-4-F3, F4
• Safety standards: PS2832-1, -4
• UL approved: No. E72422
• BSI approved: No. 8315, 8316
• CSA approved: No. CA 101391
• DIN EN60747-5-2 (VDE0884 Part2) approved
No. 40008905 (Option)
PS2833-1, -4
• UL approved: No. E72422
• CSA approved: No. CA 101391
• DIN EN60747-5-2 (VDE0884 Part2) approved
No. 40008905 (Option)
APPLICATIONS
• Hybrid IC
• Telephone/Telegraph Receiver
• FAX
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Data Sheet PN10257EJ03V0DS
2
PS2832-1,-4,PS2833-1,-4
PACKAGE DIMENSIONS (UNIT: mm)
M
0.12
0.4±0.1
1.27
2.0±0.1
0.1±0.1
PS2832-1
PS2833-1 PS2832-4
PS2833-4
4.4
7.0±0.3
0.5±0.3
0.15
+0.10
–0.05
2.7±0.3 10.3±0.3
4.4
7.0±0.3
0.5±0.3
0.15
+0.10
–0.05
1.27
2.0+0.3
–0.2
0.1±0.1
M
0.12
0.40
+0.10
–0.05
MARKING EXAMPLE
32 831 Assembly Lot
8 31Week Assembled
Last number of type No. : 32/33
PS2832-1
PS2833-1
Country Assembled
Type Number
Assembly Lot
No. 1 pin
Mark
PS2832-4
PS2833-4
PS2832-4
NL831
Year Assembled
(Last 1 Digit)
*1
*1 : Pb-Free
831
Year Assembled
(Last 1 Digit)
LN
Rank Code
In-house Code
(L: Pb-Free)
Week Assembled
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Data Sheet PN10257EJ03V0DS 3
PS2832-1,-4,PS2833-1,-4
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application
Part Number*1
PS2832-1 PS2832-1-A Pb-Free 50 pcs (Tape 50 pcs cut) Standard products PS2832-1
PS2832-1-F3 PS2832-1-F3-A Embossed Tape 3 500 pcs/reel (UL, BSI, CSA
PS2832-1-F4 PS2832-1-F4-A approved)
PS2832-4 PS2832-4-A Magazine Case 45 pcs PS2832-4
PS2832-4-F3 PS2832-4-F3-A Embossed Tape 2 500 pcs/reel
PS2832-4-F4 PS2832-4-F4-A
PS2832-1-V PS2832-1-V-A 50 pcs (Tape 50 pcs cut) DIN EN60747-5-2 PS2832-1
PS2832-1-V-F3 PS2832-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2)
PS2832-1-V-F4 PS2832-1-V-F4-A Approved (Option)
PS2832-4-V PS2832-4-V-A Magazine Case 45 pcs PS2832-4
PS2832-4-V-F3 PS2832-4-V-F3-A Embossed Tape 2 500 pcs/reel
PS2832-4-V-F4 PS2832-4-V-F4-A
PS2833-1 PS2833-1-A 50 pcs (Tape 50 pcs cut) Standard products PS2833-1
PS2833-1-F3 PS2833-1-F3-A Embossed Tape 3 500 pcs/reel (UL, CSA approved)
PS2833-1-F4 PS2833-1-F4-A
PS2833-4 PS2833-4-A Magazine Case 45 pcs PS2833-4
PS2833-4-F3 PS2833-4-F3-A Embossed Tape 2 500 pcs/reel
PS2833-4-F4 PS2833-4-F4-A
PS2833-1-V PS2833-1-V-A 50 pcs (Tape 50 pcs cut) DIN EN60747-5-2 PS2833-1
PS2833-1-V-F3 PS2833-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2)
PS2833-1-V-F4 PS2833-1-V-F4-A Approved (Option)
PS2833-4-V PS2833-4-V-A Magazine Case 45 pcs PS2833-4
PS2833-4-V-F3 PS2833-4-V-F3-A Embossed Tape 2 500 pcs/reel
PS2833-4-V-F4 PS2833-4-V-F4-A
*1 For the application of the Safety Standard, following part number should be used.
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Data Sheet PN10257EJ03V0DS
4
PS2832-1,-4,PS2833-1,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Ratings
Parameter Symbol PS2832-1 PS2833-1 PS2832-4 PS2833-4 Unit
Diode Forward Current (DC) IF50 mA/ch
Reverse Voltage VR6 V
Power Dissipation Derating
∆
PD/°C 0.6 0.8 mW/°C
Power Dissipation PD60 80 mW/ch
Peak Forward Current*1 IFP 1 A/ch
Transistor Collector to Emitter Voltage VCEO 300 350 300 350 V
Emitter to Collector Voltage VECO 0.3 V
Collector Current IC60 mA/ch
Power Dissipation Derating
∆
PC/°C 1.2 mW/°C
Power Dissipation PC120 mW/ch
Isolation Voltage*2 BV 2 500 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2832-1, PS2833-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2832-4, PS2833-4).
Data Sheet PN10257EJ03V0DS 5
PS2832-1,-4,PS2833-1,-4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor Collector to Emitter Dark
Current ICEO IF = 0 mA, VCE = 300 V 400 nA
Coupled Current Transfer Ratio
(IC/IF) CTR IF = 1 mA, VCE = 2 V 400 2 000 4 500 %
Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time*1 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω20
µ
s
Fall Time*1 tf5
*1 Test circuit for switching time
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
V
CC
V
OUT
R
L
= 100 Ω
I
F
50 Ω
Pulse Input
PW = 1 ms
Duty cycle = 1/10
In monitor
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Data Sheet PN10257EJ03V0DS
6
PS2832-1,-4,PS2833-1,-4
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
–50 –25 025 50 75 100
10 000
100 000
1 000
100
10
1
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25 50 75 100
100
80
60
40
20
0
0.8 mW/°C
0.6 mW/°C
PS2832-4
PS2833-4
PS2832-1
PS2833-1 1.2 mW/°C
PS2832-1, -4
PS2833-1, -4
25 50 75 100
120
100
80
60
40
20
0
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
50
10
5
1
0.5
0.1
0.7 0.9 1.1 1.3 1.50.8 1.0 1.2 1.4
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
0°C
–25°C
–50°C
T
A
= +100°C
+60°C
+25°C
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12345
100
50
10
5
10
1 mA
5 mA 3 mA 2 mA
I
F
= 0.5 mA
Collector Current I
C
(mA)
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
50
10
5
1
I
F
= 0.5 mA
1 mA
5 mA
2 mA
3 mA
CTR = 1 068%
2 290%
4 360%
V
CEO
= 300 V
Remark The graphs indicate nominal characteristics.
Data Sheet PN10257EJ03V0DS 7
PS2832-1,-4,PS2833-1,-4
V
CC
= 10 V,
I
C
= 10 mA,
CTR = 2 300%
1 000
100
10
1
0.110 50 100 500 1 000
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
Normalized to 1.0
at T
A
= 25°C,
I
F
= 1 mA, V
CE
= 2 V
Normalized Current Transfer Ratio CTR
Ambient Temperature T
A
(°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
–50 –25 025 50 75 100
1.4
1.0
1.2
0.8
0.6
0.4
0.2
0.0
Current Transfer Ratio CTR (%)
Forward Current I
F
(mA)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
0.1 1
0.5 105 40
4 000
4 500
3 500
3 000
2 500
2 000
1 500
1 000
500
0
I
F
= 1 mA T
A
= 25°C
60°C
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
10 10
2
10
3
10
4
10
5
10
6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
r
t
f
t
d
t
s
V
CE
= 2 V
Sample A
B
C
Remark The graphs indicate nominal characteristics.
Data Sheet PN10257EJ03V0DS
8
PS2832-1,-4,PS2833-1,-4
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
Tape Direction
PS2832-1-F3
PS2833-1-F3 PS2832-1-F4
PS2833-1-F4
Outline and Dimensions (Tape)
1.55±0.1
4.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
2.8 MAX.
7.55±0.1
0.3
7.5±0.1
16.0±0.3
2.85±0.1 2.3±0.1
1.5
+0.1
–0
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
32 831
32 831
32 831
32 831
32 831
32 831
32 831
32 831
32 831
32 831
Data Sheet PN10257EJ03V0DS 9
PS2832-1,-4,PS2833-1,-4
Tape Direction
PS2832-4-F3
PS2833-4-F3
PS2832-4-F4
PS2833-4-F4
Outline and Dimensions (Reel)
Packing: 2 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
Outline and Dimensions (Tape)
1.55±0.1
12.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
16.0±0.3
8.3±0.1
2.8 MAX.
10.7±0.1
0.3
2.3±0.1
7.5±0.1
1.5
+0.1
–0
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10257EJ03V0DS
10
PS2832-1,-4,PS2833-1,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10257EJ03V0DS 11
PS2832-1,-4,PS2833-1,-4
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10257EJ03V0DS
12
PS2832-1,-4,PS2833-1,-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
UIORM
Upr 705
1 058 Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 322 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Clearance distance >5.0 mm
Creepage distance >5.0 mm
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C Ris MIN.
Ris MIN. 1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
150
300
500
109
°C
mA
mW
Ω
<R>
PS2832-1,-4,PS2833-1,-4
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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