BC857BTLEADFREE - Central Semiconductor Corp.

BC856T SERIES

BC857T SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856T and

BC857T Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

MAXIMUM RATINGS: (TA=25°C) SYMBOL BC857T BC856T UNITS

Collector-Base Voltage VCBO 50 80 V

Collector-Emitter Voltage VCEO 45 65 V

Emitter-Base Voltage VEBO

5.0 V

Continuous Collector Current IC 100 mA

Peak Collector Current ICM 200 mA

Peak Base Current IBM 100 mA

Power Dissipation PD 250 mW

Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C

Thermal Resistance ΘJA 500 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ICBO V

CB=30V 15 nA

ICBO V

CB=30V, TA=150°C 5.0 μA

IEBO V

EB=5.0V 100 nA

BVCBO I

C=10μA (BC857T) 50 V

BVCBO I

C=10μA (BC856T) 80 V

BVCEO I

C=10mA (BC857T) 45 V

BVCEO I

C=10mA (BC856T) 65 V

BVEBO I

E=10μA 5.0 V

VCE(SAT) I

C=10mA, IB=0.5mA 0.20 V

VCE(SAT) I

C=100mA, IB=5.0mA 0.40 V

VBE(ON) I

C=2.0mA, VCE=5.0V 0.58 0.70 V

VBE(ON) I

C=10mA, VCE=5.0V 0.77 V

fT V

CE=5.0V, IC=10mA, f=100MHz 100 MHz

Cc V

CB=10V, IE=0, f=1.0MHz 2.5 pF

Ce V

EB=0.5V, IC=0, f=1.0MHz 10 pF

NF VCE=5.0V, IC=200μA,

S=2.0KΩ, f=1.0KHz, BW=200Hz 10 dB

BC856AT BC856BT

BC857AT BC857BT BC857CT

MIN MAX MIN MAX MIN MAX

hFE V

CE=5.0V, IC=2.0mA 125 250 220 475 420 800

SOT-523 CASE

R1 (20-November 2009)