BC856T SERIES
BC857T SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856T and
BC857T Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
MAXIMUM RATINGS: (TA=25°C) SYMBOL BC857T BC856T UNITS
Collector-Base Voltage VCBO 50 80 V
Collector-Emitter Voltage VCEO 45 65 V
Emitter-Base Voltage VEBO
5.0 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 100 mA
Power Dissipation PD 250 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 15 nA
ICBO V
CB=30V, TA=150°C 5.0 μA
IEBO V
EB=5.0V 100 nA
BVCBO I
C=10μA (BC857T) 50 V
BVCBO I
C=10μA (BC856T) 80 V
BVCEO I
C=10mA (BC857T) 45 V
BVCEO I
C=10mA (BC856T) 65 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=10mA, IB=0.5mA 0.20 V
VCE(SAT) I
C=100mA, IB=5.0mA 0.40 V
VBE(ON) I
C=2.0mA, VCE=5.0V 0.58 0.70 V
VBE(ON) I
C=10mA, VCE=5.0V 0.77 V
fT V
CE=5.0V, IC=10mA, f=100MHz 100 MHz
Cc V
CB=10V, IE=0, f=1.0MHz 2.5 pF
Ce V
EB=0.5V, IC=0, f=1.0MHz 10 pF
NF VCE=5.0V, IC=200μA,
R
S=2.0KΩ, f=1.0KHz, BW=200Hz 10 dB
BC856AT BC856BT
BC857AT BC857BT BC857CT
MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=2.0mA 125 250 220 475 420 800
SOT-523 CASE
R1 (20-November 2009)
www.centralsemi.com
BC856T SERIES
BC857T SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-523 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE MARKING CODE
BC856AT GT6
BC856BT GT7
BC857AT GT8
BC857BT GT9
BC857CT GT0
www.centralsemi.com
R1 (20-November 2009)
