1/8May 2005
nCOMPLEMENTARY PNP-NPN DEVICES
nNEW ENHANCED SERIES
nHIGH SWITCHING SPEED
nhFE GROUPING
nhFE IMPROVED LINEARITY
APPLICATION
nGENERAL PURPOSE CIRCUITS
nAUDIO AMPLIFIER
nPOWER LINEAR AND SWITCHING
DESCRIPTION
The TIP41CN is a silicon base island technology
NPN power transistor Jedec TO-220 plastic
package with improved performances than the
industry standard TIP41C that make this device
suitable for audio, power linear and switching
applications.
The complementary PNP type is TIP42CN.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
# See:note on page 2
Table 2: Absolute Maximum Ratings
TO-220
123
Part Number Marking Package Packaging
TIP41CN (#)
TIP41C NR
TIP41C NO
TIP41C NY
TO-220 Tube
TIP42CN (#)
TIP42C NR
TIP42C NO
TIP42C NY
TO-220 Tube
Symbol Parameter Value Unit
NPN TIP41CN
PNP TIP42CN
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 100 V
VEBO Emitter-Base Voltage (IC = 0) 5V
ICCollector Current 6A
ICM Collector Peak Current (tp < 5ms) 10 A
TIP41CN
TIP42CN
COMPLEMENTARY SILICON POWER
TRANSISTORS
PRELIMINARY DATA
Rev. 1
TIP41CN / TIP42CN
2/8
For PNP types voltage and current values are negative.
Table 3: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
# Note: Product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery details.
IBBase Current 3A
Ptot Total Dissipation at TC ≤ 25 oC65 W
Tstg Storage Temperature -65 to 150 °C
TJMax. Operating Junction Temperature 150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off Current
(IB = 0)
VCE = 60 V 0.7 mA
IEBO Emitter Cut-off Current
(IC = 0)
VEB = 5 V 1 mA
ICES Collector Cut-off Current
(VBE = 0)
VCE = 100 V 0.4 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0 )
IC = 30 mA 100 V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 6 A IB = 0.6 A 1.5 V
VBE(on)* Base-Emitter Voltage IC = 6 A VCE = 4 V 2 V
hFE* DC Current Gain IC = 0.3 A VCE = 4 V
IC = 3 A VCE = 4 V
Group R
Group O
Group Y
30
15
24
42
28
44
75
Symbol Parameter Value Unit
NPN TIP41CN
PNP TIP42CN
TIP41CN / TIP42CN
3/8
Figure 3: DC Current Gain (NPN)
Figure 4: DC Current Gain (NPN)
Figure 5: Collector-Emitter Saturation Voltage
(NPN)
Figure 6: DC Current Gain (PNP)
Figure 7: DC Current Gain (PNP)
Figure 8: Collector-Emitter Saturation Voltage
(PNP)
TIP41CN / TIP42CN
4/8
Figure 9: Base-Emitter Saturation Voltage
(NPN)
Figure 10: BT(ON) Time (NPN)
Figure 11: Resistive Load Switching Time
(NPN
Figure 12: Base-Emitter Saturation Voltage
(PNP
Figure 13: BT(ON) Time (PNP)
Figure 14: Resistive Load Switching Time
(PNP)
TIP41CN / TIP42CN
5/8
Figure 15: Resistive Load Switching Time
(NPN)
Figure 16: Collector-Base e Collector-Emitter
Capacitance (NPN)
Figure 17: Resistive Load Switching Time
(PNP)
Figure 18: Collector-Base e Collector-Emitter
Capacitance (PNP)
TIP41CN / TIP42CN
6/8
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP
3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
TIP41CN / TIP42CN
7/8
Table 4:
Version Release Date Change Designator
18-Mar-2005 1 First release.
06-Apr-2005 2 Further curves have been added.
TIP41CN / TIP42CN
8/8
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