TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
T4-LDS-0009 Rev. 2 (091456) Page 1 of 4
DEVICES LEVELS
2N6849 2N6849U JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS -100 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 -6.5 Adc
Continuous Drain Current
T
C = +100°C ID2 -4.1 Adc
Max. Power Dissipation Ptl 25
(1) W
Drain to Source On State Resistance Rds(on) 0.3
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = -10Vdc, ID = -4.1A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc V(BR)DSS -100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25mA
VDS ≥ VGS, ID = -0.25mA, Tj = +125°C
VDS ≥ VGS, ID = -0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-5.0
-4.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200 nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = -10V, ID = -4.1A pulsed
VGS = -10V, ID = -6.5A pulsed
Tj = -125°C
VGS = -10V, ID = -4.1A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.3
0.32
0.54
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = -6.5A pulsed VSD -4.3 Vdc
2N6849
TO-205AF
(formerly TO-39)
SEE FIGURE 1
2N3849U
18 PIN LCC
SEE FIGURE 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
T4-LDS-0009 Rev. 2 (091456) Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = -10V, ID = -6.5A
VDS = -50V
Qg(on)
Qgs
Qgd
34.8
6.8
23.1
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -6.5A, VGS = -10Vdc,
Gate drive impedance = 7.5Ω,
VDD = -40Vdc
td(on)
tr
td(off)
tf
60
140
140
140
ns
Diode Reverse Recovery Time di/dt ≤ -100A/µs, VDD ≤ -50V,
IF = -6.5A trr 250 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
T4-LDS-0009 Rev. 2 (091456) Page 3 of 4
Figure 1 – Case Outline and PIN Configuration for 2N6849
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
T4-LDS-0009 Rev. 2 (091456) Page 4 of 4
Figure 2 – Case Outline and PIN Configuration for 2N6849U
