© 2009 IXYS CORPORATION, All Rights Reserved DS100165(06/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1.5mA 3.0 5.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 2A, Note 1 3.0 Ω
IXFP4N100QM
Features
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Avalanche Rated
Fast Intrinsic Diode
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
High Power Density
Easy to Mount
Space Savings
VDSS = 1000V
ID25 = 2.2A
RDS(on) ≤≤
≤≤
≤ 3.0ΩΩ
ΩΩ
Ω
HiPerFETTM
Power MOSFET
Q-Class
Advance Technical Information
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 2.2 A
IDM TC= 25°C, pulse width limited by TJM 16 A
IATC= 25°C4A
EAS TC= 25°C 700 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns
PDTC= 25°C46W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in.
Weight 2.5 g
G = Gate D = Drain
S = Source
OVERMOLDED
(IXFP...M) OUTLINE
GDS
IXFP4N100QM
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 2A, Note 1 2.5 4.3 S
Ciss 1185 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 130 pF
Crss 65 pF
td(on) 17 ns
tr 15 ns
td(off) 32 ns
tf 18 ns
Qg(on) 43.5 nC
Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 2A 6.2 nC
Qgd 23.0 nC
RthJC 2.7 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 480 nC
IRM 6.16 A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2 %.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
123
OVERMOLDED TO-220 (IXFP...M)
IF = 4A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 2A,
RG = 4.7Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All Rights Reserved
IXFP4N100QM
Fi g . 1. Ou tp u t C h ar acter i s ti cs
@ 25 º C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
024681012
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
4
V
5
V
6
V
Fi g . 2. Exten d ed Ou tp u t Ch ar acter i st i cs
@ 25ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7V
4
V
6
V
5
V
Fi g . 3. Ou tp u t C h ar acter i s ti cs
@ 125ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5
V
4V
6V
Fig. 4. RDS(on) Normalized to ID = 2A Valu e vs.
Jun cti o n Temp er atu r e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 5. RDS(on) Normalized to ID = 2A Value
vs. D r ai n C u r r en t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
012345678
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m D r ai n C u r r en t vs .
Case Temp er atu r e
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFP4N100QM
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_4N100Q(4U)6-25-09
Fig. 7. Input Admittance
0
1
2
3
4
5
6
7
8
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
012345678
I
D
- Amperes
g
f s - Si emens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
2
4
6
8
10
12
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 2A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - Pi coFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si ent Th er mal I mp ed an ce
0.01
0.10
1.00
10.00
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
