BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
■SILICO N EP ITA X IAL PLANA R NP N
TRANSISTORS
■MINIA TURE P LA S TIC PACKA G E F OR
APP LICA TION IN SURFA CE MOUNT ING
CIRCUITS
■GENERAL PURPOSE MAINLY INTE NDED
FO R USE I N MEDI UM POW E R INDUS TRIA L
APP LICA TION AND F OR AUDI O AMP LIFIER
OUTPUT STAGE
■PNP CO MP LEM ENT S ARE B CP52 AND
BCP53 RES P ECT I VEL Y
INTERNAL SCHEMATI C DIAG RAM
October 1997
A BSO LUT E MAX IMU M RAT INGS
Symbol Parameter Value Unit
BCP55 BCP56
VCBO Collector-Base Voltage (IE = 0) 60 100 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 V
VCER Collector-Emitter Voltage (RBE = 1KΩ)60100V
V
EBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 1 A
ICM Collector Peak Current (tp < 5 ms) 1.5 A
IBBase Current 0.1 A
IBM Base Peak Current (tp < ms) 0.2 A
Ptot Total Dissipation at Tc = 25 oC2W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
12
2
3
SOT-223
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THERMAL DATA
Rthj-amb •
Rthj-tab • Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max 62.5
8
oC/W
oC/W
• Mount ed on a ceramic substrat e area = 30 x 35 x 0.7 mm
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 30 V
VCB = 30 V Tj = 125 oC100
10 nA
µA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA
for BCP55
for BCP56 60
100 V
V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 20 mA
for BCP55
for BCP56 60
80 V
V
V(BR)CER Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
IC = 100 µA
for BCP55
for BCP56 60
100 V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IC = 10 µA 5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V
VBE(on)∗Base-Emitter On
Voltage IC = 500 mA VCE = 2 V 1 V
hFE∗DC Current Gain IC = 5 mA VCE = 2 V
IC = 150 mA VCE = 2 V for Gr. 6
IC = 150 mA VCE = 2 V for Gr. 10
IC = 150 mA VCE = 2 V for Gr. 16
IC = 500 mA VCE = 2 V
25
40
63
100
25
100
160
250
fTTransition Frequency IC = 10 mA VCE = 5 V f = 35 MHz 130 MHz
∗ P ulsed: P ulse duratio n = 300 µs, duty cy cle ≤ 1.5 %
BCP55/56
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DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.630.650.6724.825.626.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
C
C
BE
L
a
b
e1
l1
f
g
c
d
l2
e4
P008B
SOT-223 MECHANI CAL DAT A
BCP55/56
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informat ion no r for any infring emen t of pat e nt s or ot her right s o f third par ties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Spec ifications ment ioned
in this publicat i on ar e subj ec t to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approv al o f S G S-THOM SO N M icroelecto nics.
© 1997 SGS -THOM SON M icro elect roni cs - Prin ted in Ita ly - All Rig hts Rese rved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherla nds -
Singapore - Spain - Swede n - Switzerland - Taiwa n - Thailand - United Ki ngdom - U.S. A
.
BCP55/56
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