MITSUBISHI Nch POWER MOSFET FS1VS-16A HIGH-SPEED SWITCHING USE FS1VS-16A OUTLINE DRAWING Dimensions in mm 4 10.5MAX. \ roe \ | \ | \ 2 * ER A tee 0:8 +2 jt a2 3 S| OB g| (4) i GATE 2 DRAIN 5 3 SOURCE @VDSS cccctec rece eter e reenter n eee ee nes eer na es 800V q DRAIN @ FDS (ON) (MAX) vrrrrrtecee tse rscerrersrrrssss sre 12.30 4 3 WD crc tenet e teen sneer erent enna ennn reese es ecu sass 1A TO-2208 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (te = 25C) Parameter Voss Drain-source Vass Gate-source io Drain current fom Drain current Po Maximum Ten Channel T Conditions 1 3 65 ~55 ~ +150 --55 ~ +150 1.2 2-474 ate MITSUBISHI ELECTRIC ELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS1VS-16A HIGH-SPEED SWITCHING USE Limits Symbol Parameter Test conditions - m Unit Min. Typ. Max V (BR DSS | Drain-source breakdown voltage | lb = ImA, VGS = OV 800 _ _ Vv V (BR) GSs | Gate-source breakdown voltage | Ias =+100nA, Vos = OV +30 _ v lass Gate leakage current Vas = +25V, Vos = 0V _ _ 10 HA Ipss Drain current Vbs = 800V, VGS = OV _ _ 4 mA Vasithy | Gate-source threshold voltage lo = imA, Vos = 10V 2 3 4 v rDS(ON) _| Drain-source on-state resistance | ID = 0.5A, Vas = 10V = 9.43 12.3 Q Vos (ON) | Drain-source cn-state voltage | ID = 0.5A, Vas = 10V _ 4.72 6.15 Vv lyts| Forward transfer admittance _| ID = 0.5A, VpS = 10V 0.6 1.0 ~~ Ss Ciss Input capacitance 270 pF Coss Output capacitance VDS = 25V, VGS = OV, f = IMHz _ 26 _ pF Crss Reverse transter capacitance = 4 = pF td (on) Turn-on delay time _ 9 _ ns tr Rise time VobD = 200V, ID = 0.5A, VGS = 10V, _ 12 _ ns td (otf) Turn-off delay time RGEN = Ras = 500 _ 35 ns tf Fall time ~ 30 ~ ns Vsp Source-drain voltage Is = 0.5A, VGs = OV _ 1.0 1.5 Vv Rth (ch-c) | Thermal resistance Channel to case _ _ 1.92 CAWW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 101 5 & = 3 a a z 490 tw = 100s Q 60 5 7 E i 5 < x ims a fig 3 a 5 2 40 oO 1 10ms x 2 1 o 100ms Ww x 5 c= 25C 3 20 a 3 Single Pulse a. 2 0 10-2 0 50 100 150 200 3 5710' 23 57102? 23 571039 23 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vops (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 5 1.0 Vas = 20V 0 To = 25C [Tc = 25C 10V Pulse Test Puise Test 5Vv < 16 Vas = 20V 4OV =< 08 a , a 5 12 5 06 i iy a ira s 5 a 08 a 04 Zz Z < < c G04 5 02 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vps (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 475 ELECTRIC DRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE VDs (ON) (V) DRAIN CURRENT Ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 26C Pulse Test 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) To = 26C Vos = 50V Pulse Test 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 108 7 5 3 2 102 7 5 3 2 104 7 5 3h Tch = 25C 2tf= 1MHz Vas = OV 23 57109 23 5710! 23 57102 2 DRAIN-SOURCE VOLTAGE Vons (V) DRAIN-SOURCE ON-STATE RESISTANCE rb (ON) (Q) FORWARD TRANSFER ADMITTANCE | yfs/(S) SWITCHING TIME (ns) MITSUBISHI Nch POWER MOSFET FS1VS-16A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 Te = 25C Pulse Test 16 Vas = 10V 12 20V 8 4 0 10-2 23 571072 3 57109 23 5710! DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10! 7 Vos = 15V Pulse Test 5 3 2 To = 25C 108 7 5 3 2 1 Oo 23 57100 2 3 710! DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 108 7 Teh = 25C 5 VoD = 200V 3 Ves = 10V 2 RGEN = Ras = 502 102 7 5 3 2 101 7 5 yw 1 3 10-7 2 345 7109. 2 345 710! DRAIN CURRENT. ip (A) 2- 476 9 MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE DS 0n) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8R) Dss (1C) DRAIN-SOURCE ON-STATE RESISTANCE 108 (ON) (25C) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSs (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 25C lp=1A 16 12 Vos = 250V 400V 600V 8 4 o9 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 Vas = 10V 7 ip = 1/2I0 5 Pulse Test 3 2 10 7 3 2 1 10 ~50 i] 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 14 Vas = OV ic =1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE = Zim tch--c) (C/W) 101 oon Qo o ~s Qo 40~ SOURCE CURRENT 1s (A) GATE-SOURCE THRESHOLD VOLTAGE Ves thy (V) ww ON & Mo ON rw ois rR MITSUBISHI Neh POWER MOSFET FS1VS-16A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas = 0V Pulse Test Te = 26C 75C 1 126C i) 0.8 16 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V Jon imA -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 4 PDM oy + ow Devs 10-423 5710323 5710223 57107123 57100923 5710123 57102 PULSE WIDTH tw (s) 9 _MITSUBISHI 2-477 ELECTRIC