W25Q80BV
Publication Release Date: March 26, 2009
- 1 - Preliminary - Revision A
8M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
W25Q80BV
- 2 -
Table of Contents
1. ...............................................................................................................5 GENERAL DESCRIPTION
2. .......................................................................................................................................5 FEATURES
3. ...................................................................................6 PIN CONFIGURATION SOIC 150 / 208-MIL
4. ........................................................................................6 PAD CONFIGURATION WSON 6X5-MM
5. ......................................................6 PIN DESCRIPTION SOIC 150/208-MIL, AND WSON 6X5-MM
6. ............................................................................................7 PIN CONFIGURATION SOIC 300-MIL
7. ..................................................................................................7 PIN DESCRIPTION SOIC 300-MIL
7.1 .....................................................................................................................8 Package Types
7.2 ..................................................................................................................8 Chip Select (/CS)
7.3 ....................................8 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
7.4 ...............................................................................................................8 Write Protect (/WP)
7.5 .....................................................................................................................8 HOLD (/HOLD)
7.6 ................................................................................................................8 Serial Clock (CLK)
8. ............................................................................................................................9 BLOCK DIAGRAM
9. .......................................................................................................10 FUNCTIONAL DESCRIPTION
9.1 .............................................................................................................10 SPI OPERATIONS
9.1.1 .....................................................................................................10 Standard SPI Instructions
9.1.2 ............................................................................................................10 Dual SPI Instructions
9.1.3 ..........................................................................................................10 Quad SPI Instructions
9.1.4 .......................................................................................................................10 Hold Function
9.2 .......................................................................................................11 WRITE PROTECTION
9.2.1 .........................................................................................................11 Write Protect Features
10. ........................................................................................12 CONTROL AND STATUS REGISTERS
10.1 ..........................................................................................................12 STATUS REGISTER
10.1.1 .................................................................................................................................12 BUSY
10.1.2 ..................................................................................................12 Write Enable Latch (WEL)
10.1.3 ....................................................................................12 Block Protect Bits (BP2, BP1, BP0)
10.1.4 ...........................................................................................12 Top/Bottom Block Protect (TB)
10.1.5 ................................................................................................12 Sector/Block Protect (SEC)
10.1.6 ...............................................................................................13 Complement Protect (CMP)
10.1.7 ..............................................................................13 Status Register Protect (SRP1, SRP0)
10.1.8 ..............................................................................13 Erase/Program Suspend Status (SUS)
10.1.9 ..............................................................13 Security Register Lock Bits (LB3, LB2, LB1, LB0)
10.1.10 ............................................................................................................14 Quad Enable (QE)
10.1.11 .................................................................15 Status Register Memory Protection (CMP = 0)
10.1.12 .................................................................16 Status Register Memory Protection (CMP = 1)
W25Q80BV
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Publication Release Date: March 26, 2009
- 3 - Preliminary - Revision A
10.2 INSTRUCTIONS
10.2.1 ..............................................................................17 Manufacturer and Device Identification
10.2.2 ........................................................18 Instruction Set Table 1 (Erase, Program Instructions)
10.2.3 ........................................................................19 Instruction Set Table 2 (Read Instructions)
10.2.4 ..............................................................20 Instruction Set Table 3 (ID, Security Instructions)
10.2.5 .............................................................................................................21 Write Enable (06h)
10.2.6 ..................................................................21 Write Enable for Volatile Status Register (50h)
10.2.7 .............................................................................................................22 Write Disable (04h)
10.2.8 .......................................23 Read Status Register-1 (05h) and Read Status Register-2 (35h)
10.2.9 ................................................................................................23 Write Status Register (01h)
10.2.10 ...............................................................................................................25 Read Data (03h)
10.2.11 ...............................................................................................................26 Fast Read (0Bh)
10.2.12 ...........................................................................................27 Fast Read Dual Output (3Bh)
10.2.13 ..........................................................................................28 Fast Read Quad Output (6Bh)
10.2.14 .................................................................................................29 Fast Read Dual I/O (BBh)
10.2.15 ...............................................................................................31 Fast Read Quad I/O (EBh)
10.2.16 ..............................................................................................33 Word Read Quad I/O (E7h)
10.2.17 .....................................................................................35 Octal Word Read Quad I/O (E3h)
10.2.18 ................................................................................................37 Set Burst with Wrap (77h)
10.2.19 .................................................................................38 Continuous Read Mode Bits (M7-0)
10.2.20 ................................................................38 Continuous Read Mode Reset (FFh or FFFFh)
10.2.21 .........................................................................................................39 Page Program (02h)
10.2.22 ......................................................................................40 Quad Input Page Program (32h)
10.2.23 ...........................................................................................................41 Sector Erase (20h)
10.2.24 ...................................................................................................42 32KB Block Erase (52h)
10.2.25 ...................................................................................................43 64KB Block Erase (D8h)
10.2.26 .....................................................................................................44 Chip Erase (C7h / 60h)
10.2.27 .......................................................................................45 Erase / Program Suspend (75h)
10.2.28 .......................................................................................46 Erase / Program Resume (7Ah)
10.2.29 ............................................................................................................47 Power-down (B9h)
10.2.30 ...........................................................................48 Release Power-down / Device ID (ABh)
10.2.31 ...............................................................................50 Read Manufacturer / Device ID (90h)
10.2.32 .................................................................51 Read Manufacturer / Device ID Dual I/O (92h)
10.2.33 ...............................................................52 Read Manufacturer / Device ID Quad I/O (94h)
10.2.34 ........................................................................................53 Read Unique ID Number (4Bh)
10.2.35 ......................................................................................................54 Read JEDEC ID (9Fh)
10.2.36 .........................................................................................55 Erase Security Registers (44h)
10.2.37 ....................................................................................56 Program Security Registers (42h)
10.2.38 .........................................................................................57 Read Security Registers (48h)
11. ..............................................................................................58 ELECTRICAL CHARACTERISTICS
W25Q80BV
................................................................................................58
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11.1 Absolute Maximum Ratings
11.2 ..............................................................................................................58 Operating Ranges
11.3 ....................................................................59 Power-up Timing and Write Inhibit Threshold
11.4 ..............................................................................................60 DC Electrical Characteristics
11.5 .............................................................................................61 AC Measurement Conditions
11.6 ..............................................................................................62 AC Electrical Characteristics
11.7 .................................................................................63 AC Electrical Characteristics (cont’d)
11.8 ...........................................................................................................64 Serial Output Timing
11.9 ........................................................................................................................64 Input Timing
11.10 .......................................................................................................................64 Hold Timing
12. ..........................................................................................................65 PACKAGE SPECIFICATION
12.1 ...........................................................................65 8-Pin SOIC 150-mil (Package Code SN)
12.2 ...........................................................................66 8-Pin SOIC 208-mil (Package Code SS)
12.3 ..................................................................67 8-Contact 6x5mm WSON (Package Code ZP)
12.4 ..........................................................................69 16-Pin SOIC 300-mil (Package Code SF)
13. ..........................................................................................................70 ORDERING INFORMATION
13.1 ........................................................................71 Valid Part Numbers and Top Side Marking
14. ......................................................................................................................72 REVISION HISTORY
W25Q80BV
Publication Release Date: March 26, 2009
- 5 - Preliminary - Revision A
1. GENERAL DESCRIPTION
The W25Q80BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space,
pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current
consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving
packages.
The W25Q80BV array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80BV
has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q80BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O
when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient
memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true
XIP (execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array
control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer
and device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q80BV: 8M-bit/1M-byte (1,048,576)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Note 1: Contact Winbond for details
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down current
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector Erase (4K-bytes)
– Uniform Block Erase (32K and 64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Lock-Down and OTP array protection(1)
– 64-Bit Unique Serial Number for each device
– 4X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging
– 8-pin SOIC 150/208-mil
– 8-pad WSON 6x5-mm
– 16-pin SOIC 300-mil
– Contact Winbond for KGD and CSP options
W25Q80BV
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3. PIN CONFIGURATION SOIC 150 / 208-MIL
Figure 1a. W25Q80BV Pin Assignments, 8-pin SOIC 150 / 208-mil (Package Code SN & SS)
4. PAD CONFIGURATION WSON 6X5-MM
Figure 1b. W25Q80BV Pad Assignments, 8-pad WSON 6x5-mm(Package Code ZP)
5. PIN DESCRIPTION SOIC 150/208-MIL, AND WSON 6X5-MM
PIN NO. PIN NAME I/O FUNCTION
1 /CS I Chip Select Input
2 DO (IO1) I/O Data Output (Data Input Output 1)*1
3 /WP (IO2) I/O Write Protect Input ( Data Input Output 2)*2
4 GND Ground
5 DI (IO0) I/O Data Input (Data Input Output 0)*1
6 CLK I Serial Clock Input
7 /HOLD (IO3) I/O Hold Input (Data Input Output 3)*2
8 VCC Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80BV
Publication Release Date: March 26, 2009
- 7 - Preliminary - Revision A
6. PIN CONFIGURATION SOIC 300-MIL
Figure 1c. W25Q80BV Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
7. PIN DESCRIPTION SOIC 300-MIL
PAD NO. PAD NAME I/O FUNCTION
1 /HOLD (IO3) I/O Hold Input (Data Input Output 3)*2
2 VCC Power Supply
3 N/C No Connect
4 N/C No Connect
5 N/C No Connect
6 N/C No Connect
7 /CS I Chip Select Input
8 DO (IO1) I/O Data Output (Data Input Output 1)*1
9 /WP (IO2) I/O Write Protect Input (Data Input Output 2)*2
10 GND Ground
11 N/C No Connect
12 N/C No Connect
13 N/C No Connect
14 N/C No Connect
15 DI (IO0) I/O Data Input (Data Input Output 0)*1
16 CLK I Serial Clock Input
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80BV
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7.1 Package Types
W25Q80BV is offered in an 8-pin plastic 150-mil or 208-mil width SOIC (package code SN & SS) and
6x5-mm WSON (package code ZP) as shown in figure 1a, and 1b, respectively. The W25Q80BV is also
offered in a 16-pin plastic 300-mil width SOIC (package code SF) as shown in figure 1c. Package
diagrams and dimensions are illustrated at the end of this datasheet.
7.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the
device. After power-up, /CS must transition from high to low before a new instruction will be accepted.
The /CS input must track the VCC supply level at power-up (see “Write Protection” and figure 37). If
needed a pull-up resister on /CS can be used to accomplish this.
7.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q80BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1, the /WP pin becomes IO2 and /HOLD pin becomes IO3.
7.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion as small as 4KB sector or the entire memory array can be hardware
protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP
pin function is not available since this pin is used for IO2. See figure 1a-c for the pin configuration of
Quad I/O operation.
7.5 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a and 1b for the pin configuration of Quad I/O operation.
7.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
W25Q80BV
Publication Release Date: March 26, 2009
- 9 - Preliminary - Revision A
8. BLOCK DIAGRAM
Figure 2. W25Q80BV Serial Flash Memory Block Diagram
00FF00h 00FFFFh
• Block 0 (64KB) •
000000h 0000FFh
•
•
•
07FF00h 07FFFFh
• Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
• Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
• Block 15 (64KB) •
0F0000h 0F00FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
High Voltage
Generators
xx0F00h xx 0FFFh
• Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx 1FFFh
• Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx 2FFFh
• Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
• Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
• Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
• Sector 15 (4KB) •
xxF000h xx F0FFh
Block Segmentation
Data
Write Protect Logic and Row Decode
DO (IO
1
)
DI (IO
0
)
/CS
CLK
/HOLD (IO
3
)
/WP (IO
2
)
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
000000h 0000FFh
Security Register 3 - 0
00FF00h 00FFFFh
• Block 0 (64KB) •
000000h 0000FFh
•
•
•
07FF00h 07FFFFh
• Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
• Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
• Block 15 (64KB) •
0F0000h 0F00FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
High Voltage
Generators
xx0F00h xx 0FFFh
• Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx 1FFFh
• Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx 2FFFh
• Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
• Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
• Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
• Sector 15 (4KB) •
xxF000h xx F0FFh
Block Segmentation
Data
Write Protect Logic and Row Decode
DO (IO
1
)
DI (IO
0
)
/CS
CLK
/HOLD (IO
3
)
/WP (IO
2
)
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
000000h 0000FFh
Security Register 3 - 0
W25Q80BV
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9. FUNCTIONAL DESCRIPTION
9.1 SPI OPERATIONS
9.1.1 Standard SPI Instructions
The W25Q80BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3 the CLK signal is normally high on the falling and rising edges of /CS.
9.1.2 Dual SPI Instructions
The W25Q80BV supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast
Read Dual I/O (BBh)” instructions. These instructions allow data to be transferred to or from the device at
two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are ideal for
quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical
code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
9.1.3 Quad SPI Instructions
The W25Q80BV supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, “Fast
Read Quad I/O (EBh)”, “Word Read Quad I/O (E7h)” and “Octal Word Read Quad I/O (E3h)” instructions.
These instructions allow data to be transferred to or from the device six to eight times the rate of ordinary
Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random
access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP
and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set.
9.1.4 Hold Function
For Standard SPI and Dual SPI operations, the /HOLD signal allows the W25Q80BV operation to be
paused while it is actively selected (when /CS is low). The /HOLD function may be useful in cases where
the SPI data and clock signals are shared with other devices. For example, consider if the page buffer
was only partially written when a priority interrupt requires use of the SPI bus. In this case the /HOLD
function can save the state of the instruction and the data in the buffer so programming can resume
where it left off once the bus is available again. The /HOLD function is only available for standard SPI and
Dual SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate
on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
W25Q80BV
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active low for the full duration of the /HOLD operation to avoid resetting
the internal logic state of the device.
Publication Release Date: March 26, 2009
- 11 - Preliminary - Revision A
9.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the W25Q80BV
provides several means to protect the data from inadvertent writes.
9.2.1 Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up
One Time Program (OTP) write protection*
* Note: This feature is available upon special order. Please contact Winbond for details.
Upon power-up or at power-down, the W25Q80BV will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 37). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits.
These settings allow a portion as small as 4KB sector or the entire memory array to be configured as
read only. Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be
enabled or disabled under hardware control. See Status Register section for further information.
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are
ignored except for the Release Power-down instruction.
W25Q80BV
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10. CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, Quad SPI setting, Security Register lock status and Erase/Program Suspend status. The Write
Status Register instruction can be used to configure the device write protection features, Quad SPI setting
and Security Register OTP lock. Write access to the Status Register is controlled by the state of the non-
volatile Status Register Protect bits (SRP0, SRP1), the Write Enable instruction, and during
Standard/Dual SPI operations, the /WP pin.
10.1 STATUS REGISTER
10.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or
Erase/Program Security Register instruction. During this time the device will ignore further instructions
except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and
tCE in AC Characteristics). When the program, erase or write status/security register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
10.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase
Security Register and Program Security Register.
10.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
10.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
10.1.5 Sector/Block Protect (SEC)
The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect
either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the
array as shown in the Status Register Memory Protection table. The default setting is SEC=0.
W25Q80BV
Publication Release Date: March 26, 2009
- 13 - Preliminary - Revision A
10.1.6 Complement Protect (CMP)
The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in
conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once
CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For
instance, when CMP=0, a top 4KB sector can be protected while the rest of the array is not; when
CMP=1, the top 4KB sector will become unprotected while the rest of the array become read-only. Please
refer to the Status Register Memory Protection table for details. The default setting is CMP=0.
10.1.7 Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register
(S8 and S7). The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable (OTP) protection.
SRP1 SRP0 /WP Status
Register Description
0 0 X Software
Protection /WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0 1 0
Hardware
Protected When /WP pin is low the Status Register locked and can not
be written to.
0 1 1
Hardware
Unprotected When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
1 0 X
Power Supply
Lock-Down Status Register is protected and can not be written to again
until the next power-down, power-up cycle.(1)
1 1 X
One Time
Program(2) Status Register is permanently protected and can not be
written to.
Note:
1. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state.
2. This feature is available upon special order. Please contact Winbond for details.
10.1.8 Erase/Program Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a
Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume
(7Ah) instruction as well as a power-down, power-up cycle.
10.1.9 Security Register Lock Bits (LB3, LB2, LB1, LB0)
The Security Register Lock Bits (LB3, LB2, LB1, LB0) are non-volatile One Time Program (OTP) bits in
Status Register (S13, S12, S11, S10) that provide the write protect control and status to the Security
Registers. The default state of LB3-0 is 0, Security Registers are unlocked. LB3-0 can be set to 1
individually using the Write Status Register instruction. LB3-0 are One Time Programmable (OTP), once
it’s set to 1, the corresponding 256-Byte Security Register will become read-only permanently.
W25Q80BV
- 14 -
10.1.10 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are enabled.
When the QE bit is set to a 1, the Quad IO2 and IO3 pins are enabled.
WARNING: The QE bit should never be set to a 1 during standard SPI or Dual SPI operation if the
/WP or /HOLD pins are tied directly to the power supply or ground.
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REG ISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABL E LATCH
ERASE/WRITE IN PROGRESS
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REG ISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABL E LATCH
ERASE/WRITE IN PROGRESS
Figure 3a. Status Register-1
S15 S14 S13 S12 S11 S10 S9 S8
SUS CMP LB3 LB2 LB1 LB0 QE SRP1
SUSPEND STATUS
COMPLEMENT PROTECT
(non-volatile)
SECURIT Y REGISTER LOCK BI TS
(non-volatile OTP)
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(
non-volatile
)
S15 S14 S13 S12 S11 S10 S9 S8
SUS CMP LB3 LB2 LB1 LB0 QE SRP1
SUSPEND STATUS
COMPLEMENT PROTECT
(non-volatile)
SECURIT Y REGISTER LOCK BI TS
(non-volatile OTP)
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
)
(
non-volatile
Figure 3b. Status Register-2
W25Q80BV
Publication Release Date: March 26, 2009
- 15 - Preliminary - Revision A
10.1.11 Status Register Memory Protection (CMP = 0)
STATUS REGISTER(1) W25Q80BV (8M-BIT) MEMORY PROTECTION
SEC TB BP2 BP1 BP0 BLOCK(S) ADDRESSES DENSITY PORTION
X X 0 0 0 NONE NONE NONE NONE
0 0 0 0 1 15 0F0000h – 0FFFFFh 64KB Upper 1/16
0 0 0 1 0 14 and 15 0E0000h – 0FFFFFh 128KB Upper 1/8
0 0 0 1 1 12 thru 15 0C0000h – 0FFFFFh 256KB Upper 1/4
0 0 1 0 0 8 thru 15 080000h – 0FFFFFh 512KB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64KB Lower 1/16
0 1 0 1 0 0 and 1 000000h – 01FFFFh 128KB Lower 1/8
0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256KB Lower 1/4
0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512KB Lower 1/2
0 X 1 0 1 0 thru 15 000000h – 0FFFFFh 1MB ALL
X X 1 1 X 0 thru 15 000000h – 0FFFFFh 1MB ALL
1 0 0 0 1 15 0FF000h – 0FFFFFh 4KB Top Block
1 0 0 1 0 15 0FE000h – 0FFFFFh 8KB Top Block
1 0 0 1 1 15 0FC000h – 0FFFFFh 16KB Top Block
1 0 1 0 X 15 0F8000h – 0FFFFFh 32KB Top Block
1 1 0 0 1 0 000000h – 000FFFh 4KB Bottom Block
1 1 0 1 0 0 000000h – 001FFFh 8KB Bottom Block
1 1 0 1 1 0 000000h – 003FFFh 16KB Bottom Block
1 1 1 0 X 0 000000h – 007FFFh 32KB Bottom Block
Note:
1. x = don’t care
W25Q80BV
- 16 -
1
0.1.12 Status Register Memory Protection (CMP = 1)
STATUS REGISTER(1) W25Q80BV (8M-BIT) MEMORY PROTECTION
SEC TB BP2 BP1 BP0 BLOCK(S) ADDRESSES DENSITY PORTION
X X 0 0 0 0 thru 15 000000h – 0FFFFFh 1MB ALL
0 0 0 0 1 0 thru 14 000000h – 0EFFFFh 960KB Lower 15/16
0 0 0 1 0 0 thru 13 000000h – 0DFFFFh 896KB Lower 7/8
0 0 0 1 1 0 thru 11 000000h – 0BFFFFh 768KB Lower 3/4
0 0 1 0 0 0 thru 7 000000h – 07FFFFh 512KB Lower 1/2
0 1 0 0 1 1 thru 15 010000h – 0FFFFFh 960KB Upper 15/16
0 1 0 1 0 2 thru 15 020000h – 0FFFFFh 896KB Upper 7/8
0 1 0 1 1 4 thru 15 040000h – 0FFFFFh 768KB Upper 3/4
0 1 1 0 0 8 thru 15 080000h – 0FFFFFh 512KB Upper 1/2
0 X 1 0 1 NONE NONE NONE NONE
X X 1 1 X NONE NONE NONE NONE
1 0 0 0 1 0 thru 14 000000h – 0FEFFFh 1,020KB Lower 255/256
1 0 0 1 0 0 thru 14 000000h – 0FDFFFh 1,016KB Lower 127/128
1 0 0 1 1 0 thru 14 000000h – 0FBFFFh 1,008KB Lower 63/64
1 0 1 0 X 0 thru 14 000000h – 0F7FFFh 992KB Lower 31/32
1 1 0 0 1 1 thru 15 001000h – 0FFFFFh 1,020KB Upper 255/256
1 1 0 1 0 1 thru 15 002000h – 0FFFFFh 1,016KB Upper 127/128
1 1 0 1 1 1 thru 15 004000h – 0FFFFFh 1,008KB Upper 63/64
1 1 1 0 X 1 thru 15 008000h – 0FFFFFh 992KB Upper 31/32
Note:
1. x = don’t care
W25Q80BV
Publication Release Date: March 26, 2009
- 17 - Preliminary - Revision A
10.2 INSTRUCTIONS
The instruction set of the W25Q80BV consists of thirty four basic instructions that are fully controlled
through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI
input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 36. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
10.2.1 Manufacturer and Device Identification
MANUFACTURER ID (MF7-MF0)
Winbond Serial Flash EFh
Device ID (ID7-ID0) (ID15-ID0)
Instruction ABh, 90h, 92h, 94h 9Fh
W25Q80BV 13h 4014h
W25Q80BV
- 18 -
10.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1)
INSTRUCTION NAME BYTE 1
(CODE) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Write Enable 06h
Write Enable for
Volatile Status Register 50h
Write Disable 04h
Read Status Register-1 05h (S7–S0) (2)
Read Status Register-2 35h (S15–S8) (2)
Write Status Register 01h S7–S0 S15-S8
Page Program 02h A23–A16 A15–A8 A7–A0 D7–D0
Quad Page Program 32h A23–A16 A15–A8 A7–A0 D7–D0, …(3)
Sector Erase (4KB) 20h A23–A16 A15–A8 A7–A0
Block Erase (32KB) 52h A23–A16 A15–A8 A7–A0
Block Erase (64KB) D8h A23–A16 A15–A8 A7–A0
Chip Erase C7h/60h
Erase / Program Suspend 75h
Erase / Program Resume 7Ah
Power-down B9h
Continuous Read Mode
Reset (4) FFh FFh
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. Quad Page Program Input Data:
IO0 = D4, D0, ……
IO1 = D5, D1, ……
IO2 = D6, D2, ……
IO3 = D7, D3, ……
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
10.2.19 & 10.2.20 for more information.
W25Q80BV
Publication Release Date: March 26, 2009
- 19 - Preliminary - Revision A
10.2.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION NAME BYTE 1
(CODE) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Read Data 03h A23-A16 A15-A8 A7-A0 (D7-D0)
Fast Read 0Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0)
Fast Read Dual Output 3Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)(1)
Fast Read Quad Output 6Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)(3)
Fast Read Dual I/O BBh A23-A8(2) A7-A0, M7-M0(2) (D7-D0, …)(1)
Fast Read Quad I/O EBh A23-A0, M7-M0(4) (x,x,x,x, D7-D0, …)(5) (D7-D0, …)(3)
Word Read Quad I/O(7) E7h A23-A0, M7-M0(4) (x,x, D7-D0, …)(6) (D7-D0, …)(3)
Octal Word Read Quad I/O(8) E3h A23-A0, M7-M0(4) (D7-D0, …)(3)
Set Burst with Wrap 77h xxxxxx, W6-W4(4)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
4. Quad Input Address Set Burst with Wrap Input
IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO 0 = x, x, x, x, x, x, W4, x
IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO1 = x, x, x, x, x, x, W5, x
IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO2 = x, x, x, x, x, x, W6 x ,
IO3 = A23, A19, A15, A11, A7, A3, M7, M3 IO3 = x, x, x, x, x, x, x, x
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..)
IO1 = (x, x, D5, D1, …..)
IO2 = (x, x, D6, D2, …..)
IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
W25Q80BV
- 20 -
10.2.4 Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NA ME BYTE 1
(CODE) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Release Power down/
Device ID ABh dummy dummy dummy (ID7-ID0)(1)
Manufacturer/
Device ID(2) 90h dummy dummy 00h (MF7-MF0) (ID7-ID0)
Manufacturer/Device ID
by Dual I/O 92h A23-A8 A7-A0, M[7:0] (MF[7:0], ID[7:0])
Manufacture/Device ID
by Quad I/O 94h A23-A0, M[7:0] xxxx, (MF[7:0], ID[7:0]) (MF[7:0], ID[7:0], …)
JEDEC ID 9Fh (MF7-MF0)
Manufacturer (ID15-ID8)
Memory Type (ID7-ID0)
Capacity
Read Unique ID 4Bh dummy dummy dummy dummy (ID63-ID0)
Erase
Security Registers(3) 44h A23–A16 A15–A8 A7–A0
Program
Security Registers(3) 42h A23–A16 A15–A8 A7–A0 D7-D0 D7-D0
Read
Security Registers(3) 48h A23–A16 A15–A8 A7–A0 dummy (D7-0)
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction.
2. See Manufacturer and Device Identification table for Device ID information.
3. Security Register Address:
Security Register 0: A23-16 = 00h; A15-8 = 00h; A7-0 = byte address
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
Please note that Security Register 0 is Reserved by Winbond for future use. It is recommended to use Security
registers 1- 3 before using register 0
W25Q80BV
Publication Release Date: March 26, 2009
- 21 - Preliminary - Revision A
10.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write
Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI)
pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
10.2.6 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 10.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 5) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
Instruction (50h)
Figure 5. Write Enable for Volatile Status Register Instruction Sequence Diagram
W25Q80BV
- 22 -
10.2.7 Write Disable (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase and Chip Erase instructions.
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register
instruction.
Figure 6. Write Disable Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 23 - Preliminary - Revision A
10.2.8 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 or “35h” for
Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 7. The Status
Register bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0,
SRP1, QE, LB3-0, CMP and SUS bits (see Status Register section earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when
the cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 7. The instruction is completed by driving /CS high.
Figure 7. Read Status Register Instruction Sequence Diagram
10.2.9 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. Only non-volatile Status
Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7 thru 2 of Status Register-1) and CMP, LB3, LB2,
LB1, LB0, QE, SRP1 (bits 14 thru 8 of Status Register-2) can be written to. All other Status Register bit
locations are read-only and will not be affected by the Write Status Register instruction. LB3-0 are non-
volatile OTP bits, once it is set to 1, it can not be cleared to 0. The Status Register bits are shown in
figure 3 and described in 10.1.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register Instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h”, and then writing the status register data byte as illustrated in figure 8.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRP1 and LB3, LB2, LB1, LB0 can not be changed from “1” to “0” because of the OTP
protection for these bits. Upon power off, the volatile Status Register bit values will be lost, and the non-
volatile Status Register bit values will be restored when power on again.
W25Q80BV
- 24 -
To complete the Write Status Register instruction, the /CS pin must be driven high after the eighth or
sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be
executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the CMP, QE and
SRP1 bits will be cleared to 0.
During non-volatile Status Register write operation (06h combined with 01h), after /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status
Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Please refer to 10.1 for detailed Status Register Bit descriptions. Factory default for all status Register
bits are 0.
15 14 13 12 11 10 9 8
Status Registe r 1 Status Regist er 2
15 14 13 12 11 10 9 8
Status Registe r 1 Status Regist er 2Status Regist er 2
Figure 8. Write Status Register Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 25 - Preliminary - Revision A
10.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
Figure 9. Read Data Instruction Sequence Diagram
W25Q80BV
- 26 -
10.2.11 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
Figure 10. Fast Read Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 27 - Preliminary - Revision A
10.2.12 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO 0 and IO1. This allows data to be transferred from the W25Q80BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks
is “don’t care”. However, the IO 0 pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 11. Fast Read Dual Output Instruction Sequence Diagram
W25Q80BV
- 28 -
10.2.13 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must
be executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q80BV
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in figure 12. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should
be high-impedance prior to the falling edge of the first data out clock.
Figure 12. Fast Read Quad Output Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 29 - Preliminary - Revision A
10.2.14 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO 0 and IO 1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after /CS
is raised and then lowered) does not require the BBh instruction code, as shown in figure 13b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 10.2.20 for detail descriptions).
Figure 13a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80BV
- 30 -
Figure 13b. Fast Read Dual I/O Instruction Sequence (Previous instruction set M5-4 = 10)
W25Q80BV
Publication Release Date: March 26, 2009
- 31 - Preliminary - Revision A
10.2.15 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO 0, IO 1, IO 2 and IO 3 and four Dummy
clock are required prior to the data output. The Quad I/O dramatically reduces instruction overhead
allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit
(QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 14a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the EBh instruction code, as shown in figure 14b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 10.2.20 for detail descriptions).
Byte 1 Byte 2Byte 1 Byte 2
Figure 14a. Fast Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80BV
- 32 -
Figure 14b. Fast Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to EBh. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 10.2.18 for detail descriptions.
W25Q80BV
Publication Release Date: March 26, 2009
- 33 - Preliminary - Revision A
10.2.16 Word Read Quad I/O (E7h)
The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except
that the lowest Address bit (A0) must equal 0 and only two Dummy clock are required prior to the data
output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code
execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to
enable the Word Read Quad I/O Instruction.
Word Read Quad I/O with “Continuous Read Mode”
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 15a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E7h instruction code, as shown in figure 15b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 10.2.20 for detail descriptions).
Instruction (E7h)
Byte 1 Byte 2 Byte 3
404040
515151
626262
737373
Instruction (E7h)
Byte 1 Byte 2 Byte 3
404040404040
515151515151
626262626262
737373737373
Figure 15a. Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80BV
- 34 -
Byte 1 Byte 2 Byte 3
404040
515151
626262
737373
Byte 1 Byte 2 Byte 3
40
4040
4040
40
51
5151
5151
51
62
6262
6262
62
73
7373
7373
73
Figure 15b. Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Word Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Word Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to E7h. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 10.2.18 for detail descriptions.
W25Q80BV
Publication Release Date: March 26, 2009
- 35 - Preliminary - Revision A
10.2.17 Octal Word Read Quad I/O (E3h)
The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction
except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the dummy clocks are
not required, which further reduces the instruction overhead allowing even faster random access for code
execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word
Read Quad I/O Instruction.
Octal Word Read Quad I/O with “Continuous Read Mode”
The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 16a. The
upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through
the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E3h instruction code, as shown in figure 16b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 10.2.20 for detail descriptions).
Instruction (E3h)
Byte 1 Byte 2 Byte 3
Figure 16a. Octal Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
404040
515151
626262
737373
40
51
62
73
Byte 4
Instruction (E3h)
Byte 1 Byte 2 Byte 3
404040404040
515151515151
626262626262
737373737373
4040
5151
6262
7373
Byte 4
W25Q80BV
- 36 -
Byte 1
40
51
62
73
Figure 16b. Octal Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Byte 2 Byte 3 Byte 4
404040
515151
626262
737373
Byte 1
40
40
51
51
62
62
73
73
Byte 2 Byte 3 Byte 4
40
4040
4040
40
51
5151
5151
51
62
6262
6262
62
73
7373
7373
73
W25Q80BV
Publication Release Date: March 26, 2009
- 37 - Preliminary - Revision A
10.2.18 Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) instruction is used in conjunction with “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
Certain applications can benefit from this feature and improve the overall system code execution
performance.
Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the /CS pin low
and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The
instruction sequence is shown in figure 17. Wrap bit W7 and the lower nibble W3-0 are not used.
W4 = 0 W4 =1 (default)
W6, W5 Wrap Around Wrap Length Wrap Around Wrap Length
0 0 Yes 8-byte No N/A
0 1 Yes 16-byte No N/A
1 0 Yes 32-byte No N/A
1 1 Yes 64-byte No N/A
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any
page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with
Wrap instruction should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case
of a system Reset while W4 = 0, it is recommended that the controller issues a Set Burst with Wrap
instruction to reset W4 = 1 prior to any normal Read instructions since W25Q80BV does not have a
hardware Reset Pin.
/
CS
CLK
/
CS
CLK
Figure 17. Set Burst with Wrap Instruction Sequence
0123456789101112 13 14 15Mode 3
Mode 0
IO
0
IO
1
IO
2
IO
3
Instruction (
77h
)
don’t care don’t care don’t care wrap bit
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
w6
w5
w4
X
X
X
X
0123456789101112 13 14 15Mode 3
Mode 0
Instruction (
77h
)
IO
0
IO
1
IO
2
IO
3
don’t care don’t care don’t care wrap bit
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
w6
w5
w4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
w6
w5
w4
X
X
X
X
W25Q80BV
- 38 -
10.2.19 Continuous Read Mode Bits (M7-0)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O”, “Fast Read Quad
I/O”, “Word Read Quad I/O” and “Octal Word Read Quad I/O” instructions to provide the highest random
Flash memory access rate with minimum SPI instruction overhead, thus allow true XIP (execute in place)
to be performed on serial flash devices.
M7-0 need to be set by the Dual/Quad I/O Read instructions. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh, EBh, E7h or E3h) is needed or not for the next command. When M5-4 = (1,0),
the next command will be treated same as the current Dual/Quad I/O Read command without needing
the 8-bit instruction code; when M5-4 do not equal to (1,0), the device returns to normal SPI mode, all
commands can be accepted. M7-6 and M3-0 are reserved bits for future use, either 0 or 1 values can be
used.
10.2.20 Continuous Read Mode Reset (FFh or FFFFh)
Continuous Read Mode Reset instruction can be used to set M4 = 1, thus the device will release the
Continuous Read Mode and return to normal SPI operation, as shown in figure 18.
Figure 18. Continuous Read Mode Reset for Fast Read Dual/Quad I/O
Since W25Q80BV does not have a hardware Reset pin, so if the controller resets while W25Q80BV is set
to Continuous Mode Read, the W25Q80BV will not recognize any initial standard SPI instructions from
the controller. To address this possibility, it is recommended to issue a Continuous Read Mode Reset
instruction as the first instruction after a system Reset. Doing so will release the device from the
Continuous Read Mode and allow Standard SPI instructions to be recognized.
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The
instruction is “FFh”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are
needed to shift in instruction “FFFFh”.
/CS
Mode 0
Mode 3 012345678910 11 12 13 14 15
Mode 0
Mode 3
CLK
IO
0
IO
1
IO
2
IO
3
Mode Bit Reset
for Quad I/O
Mode Bit Reset
for Dual I/O
Don’t Care
Don’t Care
Don’t Care
FFhFFh
/CS
Mode 0
Mode 3 00 11 22 33 44 55 66 77 88 99 1010 1111 1212 1313 1414 1515
Mode 0
Mode 3
CLK
IO
0
IO
1
IO
2
IO
3
Mode Bit Reset
for Quad I/O
Mode Bit Reset
for Dual I/O
FFh
Don’t Care
Don’t Care
Don’t Care
FFh
W25Q80BV
Publication Release Date: March 26, 2009
- 39 - Preliminary - Revision A
10.2.21 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the
device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated
by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0)
and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. The Page Program instruction sequence is shown in
figure 19.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS is
driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits.
Figure 19. Page Program Instruction Sequence Diagram
W25Q80BV
- 40 -
10.2.22 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO 1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction
since the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction
code “32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin
must be held low for the entire length of the instruction while data is being sent to the device. All other
functions of Quad Page Program are identical to standard Page Program. The Quad Page Program
instruction sequence is shown in figure 20.
Figure 20. Quad Input Page Program Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 41 - Preliminary - Revision A
10.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 21. Sector Erase Instruction Sequence Diagram
W25Q80BV
- 42 -
10.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 22. 32KB Block Erase Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 43 - Preliminary - Revision A
10.2.25 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 23.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle
is in progress, the Read Status Register instruction may still be accessed for checking the status of the
BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other instructions again. After the Block Erase cycle has finished the
Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
Figure 23. 64KB Block Erase Instruction Sequence Diagram
W25Q80BV
- 44 -
10.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 24. Chip Erase Instruction Sequence Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 45 - Preliminary - Revision A
10.2.27 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors
or blocks. The Erase/Program Suspend instruction sequence is shown in figure 25.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation. A
maximum of time of “tSUS” (See AC Characteristics) is required to suspend the erase or program
operation. The BUSY bit in the Status Register will clear to 0 and the SUS bit in the Status Register will
be set to 1 after Erase/Program Suspend.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or
block that was being suspended may become corrupted. It is recommended for the user to implement
system design techniques against the accidental power interruption and preserve data integrity during
erase/program suspend state.
Figure 25. Erase/Program Suspend Instruction Sequence
W25Q80BV
- 46 -
10.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction must be written to resume the Sector or Block Erase operation or
the Page Program operation after an Erase/Program Suspend. After issued the BUSY bit in the Status
Register will be set to a 1, the SUS bit in the Status Register will clear to 0 and the Sector or Block will
complete the erase operation or the page will complete the program operation. Resume instructions will
be ignored unless an Erase/Program Suspend operation is active. The Erase/Program Resume
instruction sequence is shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off.
Figure 26. Erase/Program Resume Instruction Sequence
W25Q80BV
Publication Release Date: March 26, 2009
- 47 - Preliminary - Revision A
10.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
Figure 27. Deep Power-down Instruction Sequence Diagram
W25Q80BV
- 48 -
10.2.30 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 28a. Release from power-
down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
28a. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
Figure 28a. Release Power-down Instruction Sequence
W25Q80BV
Publication Release Date: March 26, 2009
- 49 - Preliminary - Revision A
Figure 28b. Release Power-down / Device ID Instruction Sequence Diagram
W25Q80BV
- 50 -
10.2.31 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in figure 29. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
Figure 29. Read Manufacturer / Device ID Diagram
W25Q80BV
Publication Release Date: March 26, 2009
- 51 - Preliminary - Revision A
10.2.32 Read Manufacturer / Device ID Dual I/O (92h)
The Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer/Device ID
instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x
speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, but with the capability to input the Address bits two bits per clock.
After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out 2 bits per clock on
the falling edge of CLK with most significant bits (MSB) first as shown in figure 30. The Device ID values
for the W25Q80BV is listed in Manufacturer and Device Identification table. If the 24-bit address is initially
set to 000001h the Device ID will be read first and then followed by the Manufacturer ID. The
Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction
is completed by driving /CS high.
Figure 30. Read Manufacturer / Device ID Dual I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
W25Q80BV
- 52 -
10.2.33 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
four clock dummy cycles and then a 24-bit address (A23-A0) of 000000h, but with the capability to input
the Address bits four bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device
ID are shifted out four bits per clock on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 31. The Device ID values for the W25Q80BV is listed in Manufacturer and Device
Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then
followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating
from one to the other. The instruction is completed by driving /CS high.
Figure 31. Read Manufacturer / Device ID Quad I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
W25Q80BV
Publication Release Date: March 26, 2009
- 53 - Preliminary - Revision A
10.2.34 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q80BV device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-
bit ID is shifted out on the falling edge of CLK as shown in figure 32.
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103
Figure 32. Read Unique ID Number Instruction Sequence
W25Q80BV
- 54 -
10.2.35 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q80BV provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin
low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh)
and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the
falling edge of CLK with most significant bit (MSB) first as shown in figure 33. For memory type and
capacity values refer to Manufacturer and Device Identification table.
Figure 33. Read JEDEC ID Instruction Sequence
W25Q80BV
Publication Release Date: March 26, 2009
- 55 - Preliminary - Revision A
10.2.36 Erase Security Registers (44h)
The W25Q80BV offers four 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the four security registers.
ADDRESS A23-16 A15-12 A11-8 A7-0
Security Register #0* 00h 0 0 0 0 0 0 0 0 Don’t Care
Security Register #1 00h 0 0 0 1 0 0 0 0 Don’t Care
Security Register #2 00h 0 0 1 0 0 0 0 0 Don’t Care
Security Register #3 00h 0 0 1 1 0 0 0 0 Don’t Care
* Please note that Security Register 0 is Reserved by Winbond for future use. It is
recommended to use Security registers 1- 3 before using register 0.
The Erase Security Register instruction sequence is shown in figure 34. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits (LB3-0) in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the
corresponding security register will be permanently locked, Erase Security Register instruction to that
register will be ignored (See 10.1.9 for detail descriptions).
Instruction (44h)
Figure 34. Erase Security Registers Instruction Sequence
W25Q80BV
- 56 -
10.2.37 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory
locations. A Write Enable instruction must be executed before the device will accept the Program Security
Register Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low
then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte,
into the DI pin. The /CS pin must be held low for the entire length of the instruction while data is being
sent to the device.
ADDRESS A23-16 A15-12 A11-8 A7-0
Security Register #0* 00h 0 0 0 0 0 0 0 0 Byte Address
Security Register #1 00h 0 0 0 1 0 0 0 0 Byte Address
Security Register #2 00h 0 0 1 0 0 0 0 0 Byte Address
Security Register #3 00h 0 0 1 1 0 0 0 0 Byte Address
* Please note that Security Register 0 is Reserved by Winbond for future use. It is
recommended to use Security registers 1- 3 before using register 0.
The Program Security Register instruction sequence is shown in figure 35. The Security Register Lock
Bits (LB3-0) in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 10.1.9, 10.2.21 for detail descriptions).
Instruction (42h)
Figure 35. Program Security Registers Instruction Sequence
W25Q80BV
Publication Release Date: March 26, 2009
- 57 - Preliminary - Revision A
10.2.38 Read Security Registers (48h)
The Read Security Register instruction is similar to the Fast Read instruction and allows one or more data
bytes to be sequentially read from one of the four security registers. The instruction is initiated by driving
the /CS pin low and then shifting the instruction code “48h” followed by a 24-bit address (A23-A0) and
eight “dummy” clocks into the DI pin. The code and address bits are latched on the rising edge of the CLK
pin. After the address is received, the data byte of the addressed memory location will be shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first. The byte address is
automatically incremented to the next byte address after each byte of data is shifted out. Once the byte
address reaches the last byte of the register (byte FFh), it will reset to 00h, the first byte of the register,
and continue to increment. The instruction is completed by driving /CS high. The Read Security Register
instruction sequence is shown in figure 36. If a Read Security Register instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Security Register instruction allows clock rates from D.C. to a
maximum of FR (see AC Electrical Characteristics).
ADDRESS A23-16 A15-12 A11-8 A7-0
Security Register #0* 00h 0 0 0 0 0 0 0 0 Byte Address
Security Register #1 00h 0 0 0 1 0 0 0 0 Byte Address
Security Register #2 00h 0 0 1 0 0 0 0 0 Byte Address
Security Register #3 00h 0 0 1 1 0 0 0 0 Byte Address
* Please note that Security Register 0 is Reserved by Winbond for future use. It is
recommended to use Security registers 1- 3 before using register 0.
Instruc tion (48h)Instruc tion (48h)
Figure 36. Read Security Registers Instruction Sequence
W25Q80BV
- 58 -
11. ELECTRICAL CHARACTERISTICS(1)
11.1 Absolute Maximum Ratings (2)
PARAMETERS SYMBOL CONDITIONS RANGE UNIT
Supply Voltage VCC –0.6 to +4.0 V
Voltage Applied to Any Pin VIO Relative to Ground –0.6 to VCC+0.4 V
Transient Voltage on any Pin VIOT <20nS Transient
Relative to Ground –2.0V to VCC+2.0V V
Storage Temperature TSTG –65 to +150 °C
Lead Temperature TLEAD See Note
(3) °C
Electrostatic Discharge Voltage VESD Human Body Model(4) –2000 to +2000 V
Notes:
1. Specification for W25Q80BV is preliminary. See preliminary designation at the end of this document.
2. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
4. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
11.2 Operating Ranges
SPEC
PARAMETER SYMBOL CONDITIONS MIN MAX
UNIT
Supply Voltage(1) VCC
FR = 80MHz, fR = 50MHz
FR = 104MHz, fR = 50MHz 2.7
3.0 3.6
3.6 V
Ambient Temperature,
Operating TA Industrial –40 +85 °C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
W25Q80BV
Publication Release Date: March 26, 2009
- 59 - Preliminary - Revision A
11.3 Power-up Timing and Write Inhibit Threshold
spec
Parameter Symbol
MIN MAX
Unit
VCC (min) to /CS Low tVSL(1) 10 µs
Time Delay Before Write Instruction tPUW(1) 1 10 ms
Write Inhibit Threshold Voltage VWI(1) 1.0 2.0 V
Note:
1. These parameters are characterized only.
Figure 37. Power-up Timing and Voltage Levels
W25Q80BV
- 60 -
11.4 DC Electrical Characteristics
SPEC
PARAMETER SYMBOL CONDITIONS MIN TYP MAX
UNIT
Input Capacitance CIN(1) VIN = 0V(1) 6 pF
Output Capacitance Cout(1) VOUT = 0V(1) 8 pF
Input Leakage ILI ±2 µA
I/O Leakage ILO ±2 µA
Standby Current ICC1 /CS = VCC,
VIN = GND or VCC 25 50 µA
Power-down Current ICC2 /CS = VCC,
VIN = GND or VCC 1 5 µA
Current Read Data /
Dual /Quad 1MHz(2) ICC3 C = 0.1 VCC / 0.9 VCC
DO = Open 4/5/6 6/7.5/9 mA
Current Read Data /
Dual /Quad 33MHz(2) ICC3 C = 0.1 VCC / 0.9 VCC
DO = Open 6/7/8 9/10.5/12 mA
Current Read Data /
Dual /Quad 50MHz(2) ICC3 C = 0.1 VCC / 0.9 VCC
DO = Open 7/8/9 10/12/13.5 mA
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz(2) ICC3 C = 0.1 VCC / 0.9 VCC
DO = Open 10/11/12 15/16.5/18 mA
Current Write Status
Register ICC4 /CS = VCC 8 12 mA
Current Page Program ICC5 /CS = VCC 20 25 mA
Current Sector/Block
Erase ICC6 /CS = VCC 20 25 mA
Current Chip Erase ICC7 /CS = VCC 20 25 mA
Input Low Voltage VIL –0.5 VCC x 0.3 V
Input High Voltage VIH VCC x 0.7 VCC + 0.4 V
Output Low Voltage VOL IOL = 100 µA 0.2 V
Output High Voltage VOH IOH = –100 µA VCC – 0.2 V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
W25Q80BV
Publication Release Date: March 26, 2009
- 61 - Preliminary - Revision A
11.5 AC Measurement Conditions
SPEC
PARAMETER SYMBOL
MIN MAX
UNIT
Load Capacitance CL 30 pF
Input Rise and Fall Times TR, TF 5 ns
Input Pulse Voltages VIN 0.2 VCC to 0.8 VCC V
Input Timing Reference Voltages IN 0.3 VCC to 0.7 VCC V
Output Timing Reference Voltages OUT 0.5 VCC to 0.5 VCC V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 38. AC Measurement I/O Waveform
W25Q80BV
- 62 -
11.6 AC Electrical Characteristics
SPEC
DESCRIPTION SYMBOL ALT
MIN TYP MAX UNIT
Clock frequency for all instructions
except Read Data instruction (03h)
2.7V-3.6V VCC & Industrial Temperature FR f
C D.C. 80 MHz
Clock frequency for all instructions
except Read Data instruction (03h)
3.0V-3.6V VCC & Commercial Temperature FR f
C D.C. 104 MHz
Clock frequency for Read Data instruction (03h) fR D.C. 50 MHz
Clock High, Low Time
for all instructions except Read Data (03h) tCLH1,
tCLL1(1) 4 ns
Clock High, Low Time
for Read Data (03h) instruction tCRLH,
tCRLL(1) 8 ns
Clock Rise Time peak to peak t CLCH(2) 0.1 V/ns
Clock Fall Time peak to peak tCHCL(2) 0.1 V/ns
/CS Active Setup Time relative to CLK tSLCH tCSS 5 ns
/CS Not Active Hold Time relative to CLK tCHSL 5 ns
Data In Setup Time tDVCH tDSU 2 ns
Data In Hold Time tCHDX tDH 5 ns
/CS Active Hold Time relative to CLK tCHSH 5 ns
/CS Not Active Setup Time relative to CLK tSHCH 5 ns
/CS Deselect Time (for Array Read Array Read) tSHSL1 tCSH 10 ns
/CS Deselect Time (for Erase or Program Read
Status Registers and Volatile Status Register Write) tSHSL2 tCSH 50 ns
Output Disable Time tSHQZ(2) tDIS 7 ns
Clock Low to Output Valid tCLQV1 tV1 7 ns
Clock Low to Output Valid (for Read ID instructions) tCLQV2 tV2 8.5 ns
Output Hold Time tCLQX tHO 0 ns
/HOLD Active Setup Time relative to CLK tHLCH 5 ns
Continued – next page
W25Q80BV
Publication Release Date: March 26, 2009
- 63 - Preliminary - Revision A
11.7 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION SYMBOL ALT
MIN TYP MAX UNIT
/HOLD Active Hold Time relative to CLK tCHHH 5 ns
/HOLD Not Active Setup Time relative to CLK tHHCH 5 ns
/HOLD Not Active Hold Time relative to CLK tCHHL 5 ns
/HOLD to Output Low-Z tHHQX(2) tLZ 7 ns
/HOLD to Output High-Z tHLQZ(2) tHZ 12 ns
Write Protect Setup Time Before /CS Low t WHSL(3) 20 ns
Write Protect Hold Time After /CS High tSHWL(3) 100 ns
/CS High to Power-down Mode tDP(2) 3 µs
/CS High to Standby Mode without Electronic
Signature Read tRES1(2) 3 µs
/CS High to Standby Mode with Electronic Signature
Read tRES2(2) 1.8 µs
/CS High to next Instruction after Suspend tSUS(2) 20 µs
Write Status Register Time tW 10 15 ms
Byte Program Time (First Byte) (4) tBP1 30 50 µs
Additional Byte Program Time (After First Byte) (4) tBP2 2.5 12 µs
Page Program Time tPP 0.7 3 ms
Sector Erase Time (4KB) tSE 30 200 ms
Block Erase Time (32KB) tBE1 120 800 ms
Block Erase Time (64KB) tBE2 150 1,000 ms
Chip Erase Time tCE 2 6 s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP0 bit is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
W25Q80BV
- 64 -
11.8 Serial Output Timing
11.9 Input Timing
11.10 Hold Timing
W25Q80BV
Publication Release Date: March 26, 2009
- 65 - Preliminary - Revision A
12. PACKAGE SPECIFICATION
12.1 8-Pin SOIC 150-mil (Package Code SN)
MILLIMETERS INCHES
SYMBOL MIN TYP. MAX MIN TYP. MAX
A 1.47 1.60 1.72 0.058 0.063 0.068
A1 0.10 --- 0.24 0.004 --- 0.009
A2 --- 1.45 --- --- 0.057 ---
b 0.33 0.41 0.50 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075 0.008 0.0098
D(3) 4.80 4.85 4.95 0.189 0.191 0.195
E 5.80 6.00 6.19 0.228 0.236 0.244
E1(3) 3.80 3.90 4.00 0.150 0.154 0.157
e(2) 1.27 BSC 0.050 BSC
L 0.40 0.71 1.27 0.015 0.028 0.050
0o --- 8o 0
o --- 8o
CP --- --- 0.10 --- --- 0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the
package.
4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
W25Q80BV
- 66 -
12.2 8-Pin SOIC 208-mil (Package Code SS)
MILLIMETERS INCHES
SYMBOL MIN MAX MIN MAX
A 1.75 2.16 0.069 0.085
A1 0.05 0.25 0.002 0.010
A2 1.70 1.91 0.067 0.075
b 0.35 0.48 0.014 0.019
C 0.19 0.25 0.007 0.010
D 5.18 5.38 0.204 0.212
E 7.70 8.10 0.303 0.319
E1 5.18 5.38 0.204 0.212
e 1.27 BSC 0.050 BSC
L 0.50 0.80 0.020 0.031
0o 8
o 0
o 8
o
y --- 0.10 --- 0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the
package.
4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
W25Q80BV
Publication Release Date: March 26, 2009
- 67 - Preliminary - Revision A
12.3 8-Contact 6x5mm WSON (Package Code ZP)
MILLIMETERS INCHES
SYMBOL MIN TYP. MAX MIN TYP. MAX
A 0.70 0.75 0.80 0.0276 0.0295 0.0315
A1 0.00 0.02 0.05 0.0000 0.0008 0.0019
A2 0.55 0.0126
A3 0.19 .0.20 0.25 0.0075 0.0080 0.0098
b 0.36 0.40 0.48 0.0138 0.0157 0.0190
D(3) 5.90 6.00 6.10 0.2320 0.2360 0.2400
D1 3.30 3.40 3.50 0.1299 0.1338 0.1377
E 4.90 5.00 5.10 0.1930 0.1970 0.2010
E1(3) 4.20 4.30 4.40 0.1653 0.1692 0.1732
e(2) 1.27 BSC 0.0500 BSC
K 0.20 0.0080
L 0.50 0.60 0.75 0.0197 0.0236 0.0295
W25Q80BV
- 68 -
8-Contact 6x5mm WSON Cont’d.
MILLIMETERS INCHES
SYMBOL T TYP.
MIN YP. MAX MIN MAX
SOLDER PATTERN
M 3.40 0.13 8 3
N 4.30 0.16 2 9
P 6.00 0.23 0 6
Q 0.50 0.01 6 9
R 0.75 0.02 5 5
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the
package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid
placement of exposed PCB vias under the pad.
W25Q80BV
Publication Release Date: March 26, 2009
- 69 - Preliminary - Revision A
12.4 16-Pin SOIC 300-mil (Package Code SF)
MILLIMETERS INCHES
SYMBOL MIN MAX MIN MAX
A 2.36 2.64 0.093 0.104
A1 0.10 0.30 0.004 0.012
b 0.33 0.51 0.013 0.020
C 0.18 0.28 0.007 0.011
D(3) 10.08 10.49 0.397 0.413
E 10.01 10.64 0.394 0.419
E1(3) 7.39 7.59 0.291 0.299
e(2) 1.27 BSC 0.050 BSC
L 0.39 1.27 0.015 0.050
0o 8
o 0
o 8
o
y --- 0.076 --- 0.003
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
W25Q80BV
- 70 -
13. ORDERING INFORMATION (1)
W 25Q xxx V xx(1)
W = Winbond
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
80B = 8M-bit
V = 2.7V to 3.6V
SN = 8-pin SOIC 150-mil SS = 8-pin SOIC 208-mil
SF = 16-pin SOIC 300-mil ZP = 8-pad WSON 6x5-mm
I = Industrial (-40°C to +85°C)
(2)
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
P = Green Package with Status Register Power-Down & OTP enabled
Notes:
1a. Only the 2nd letter is used for the part marking; WSON package type ZP is not used for the part marking.
1b. The “W” prefix is not included on the part marking.
2a. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and Reel (shape
T) or Tray (shape S), when placing orders.
2b. For shipments with OTP feature enabled, please specify when placing orders.
W25Q80BV
Publication Release Date: March 26, 2009
- 71 - Preliminary - Revision A
13.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q80BV SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 11-
digit Product Number for ordering. However, due to limited space, the Top Side Marking on all packages
use an abbreviated 9-digit number.
PACKAGE TYPE DENSITY PRODUCT NUMBER TOP SIDE MARKING
SN
SOIC-8 150mil 8M-bit W25Q80BVSNIG
W25Q80BVSNIP 25Q80BVNIG
25Q80BVNIP
SS
SOIC-8 208mil 8M-bit W25Q80BVSSIG
W25Q80BVSSIP 25Q80BVSIG
25Q80BVSIP
SF
SOIC-16 300mil 8M-bit W25Q80BVSFIG
W25Q80BVSFIP 25Q80BVFIG
25Q80BVFIP
ZP(1)
WSON-8 6x5mm 8M-bit W25Q80BVZPIG
W25Q80BVZPIP 25Q80BVIG
25Q80BVIP
Note:
1. WSON package type ZP is not used in the top side marking.
W25Q80BV
- 72 -
14. REVISION HISTORY
VERSION DATE PAGE DESCRIPTION
A 03/26/09 New Create Preliminary
Preliminary Designation
The “Preliminary” designation on a Winbond datasheet indicates that the product is not fully
characterized. The specifications are subject to change and are not guaranteed. Winbond or an
authorized sales representative should be consulted for current information before using this product.
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in
systems or equipment intended for surgical implantation, atomic energy control instruments,
airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, or for other applications intended to support or sustain life.
Further more, Winbond products are not intended for applications wherein failure of Winbond
products could result or lead to a situation wherein personal injury, death or severe property or
environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
ow n risk and agree to fully indemnify Winbond for any damages resulting from such improper use
or sales.
