1
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabri-
cated on a OMCVD epitaxial wafer using a proc-
ess designed for high device uniformity and ex-
tremely low parasitics. This device is fully pas-
sivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junc-
tion during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typi-
cal applications include single and double bal-
anced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detec-
tors, etc. This device can be used through 110
GHz.
.
Case Style ODS-1278
2
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Electrical Specifications @ + 25 °C
Parameters and Test Conditions Symbol Units MA4E1310
Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz Cj pF .010
Total Capacitance at 0V at 1 MHz1 Ct pF .025 .040 .045
Slope Resistance 2 Rd Ohms 7 9
Forward Voltage at 1mA Vf1 Volts .60 .70 .80
Reverse Breakdown Voltage at @ 10uA Vbr Volts 4.5 7
SSB Noise Figure ( Estimated ) NF dB 6.5
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
3
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Parameter Absolute Maximum
Operating Temperature -65 °C to +125 °C
Storage Temperature -65 °C to +150 °C
Incident LO Power +20 dBm
Incident RF Power +20 dBm .
Mounting Temperature +235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification 2 Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
Absolute Maximum Ratings 1
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Fo rw ard Cu rrent (mA)
Forward Current vs Temperature
- 50°C
+125°C 25°C
4
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Handling Procedures
The following precautions sho uld be observed to avoid damaging these chips:
Cleanliness: The chips should b e han dled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD te chniques should be used when handling these devices.
General Handling: The protective polymer coating on the active areas of these die pro vides scratch
protection, particularly for the metal air bridge which contacts the anode. Die can
be handled with tweezers or vacuum pickups and a r e suitable for use with
automatic pick-and-place equipment.
Mounting Techniques
This device is designed to be inserted onto hard or soft substrates with the junction side down. It can be
mounted with conductive epoxy or with a low temperature solder preform.
Solder Die Attach:
Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not rec-
ommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or gre a te r than
200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150C. Use a minimum amount of epoxy. Cure epoxy as per manufac-
turer’s schedule. For extended cure times, temperatures should be kept below 200C.
5
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Flip Chip Outline Drawing
F
G
E
D
C
B
A
MAX.
MIN.
MAX.MIN. MILLIMETERS
INCHES
DIM.
0.013
0.026
0.008
0.007
0.016
0.004
0.006
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.330
0.660
0.203
0.101
0.152
H0.0075 0.0085 0.190 0.216
H
MA4E1310
Case Style 1278
E
B
A
D
F
G
C
0.177
0.406
