SEMICONDUCTOR KTX211U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES *Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C *With Built-in bias resistors. A1 C (Ultra Super mini type with 6 leads.) *Simplify circuit design. D *Reduce a quantity of parts and manufacturing process. D G H EQUIVALENT CIRCUIT Q1 Q2 C IN B R1 Q2 R1=2.2K R2=2.2K 0.15+0.1/-0.05 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 (EMITTER) (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) (COLLECTOR) Type Name 4 Q2 1 3 5 4 BF Q1 2 T US6 Marking 6 1 H COMMON EQUIVALENT CIRCUIT (TOP VIEW) 5 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + G R2 6 T OUT E B1 C MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 2 3 Q1 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V IC -500 -1 A RATING UNIT Collector Current ICP * * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL Output Voltage VO 50 V Input Voltage VI 12, -10 V Output Current IO 100 SYMBOL RATING UNIT PD * 200 Tj 150 Tstg -55150 Q1, Q2 MAXIMUM RATING (Ta=25) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. 2002. 3. 29 Revision No : 1 1/4 KTX211U Q1 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. UNIT - - -100 nA VCB=-15V, IE=0 Collector-Base Breakdown Voltage V(BR)CBO IE=-10A -15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10A -6 - - V 270 - 680 - IC=-200mA, IB=-10mA - -100 -250 mV VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz VCB=-10V, IE=0, f=1MHz - 6.5 - pF MIN. TYP. MAX. UNIT. - - 500 hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance VCE=-2V, IC=-10mA Q2 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL IO(OFF) Output Cut-off Current TEST CONDITION VO=50V, VI=0 GI VO=5V, IO=20 20 - - Output Voltage VO(ON) IO=10, II=0.5 - 0.1 0.3 V Input Voltage (ON) VI(ON) VO=0.3V, IO=20 - 1.83 3 V Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 0.5 1.15 - V Transition Frequency fT * VO=10V, IO=5 - 250 - VI=5V - - 3.8 DC Current Gain II Input Current Note : * Characteristic of Transistor Only. 2002. 3. 29 Revision No : 1 2/4 KTX211U Q 1 (PNP TRANSISTOR) h FE - I C 1K Ta=125 C DC CURRENT GAIN h FE 500 Ta=25 C 300 Ta=-40 C 100 50 30 VCE =-2V 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - I C -1K I C /IB =20 -500 -300 -100 C 125 Ta= 25 C C Ta= =-40 Ta -50 -30 -10 -5 -3 -1 -1 COLLECTOR CURRENT I C (mA) -3 -10K Ta=25 C -100 -50 -30 I C /IB =50 I C /IB =20 I C /IB =10 -10 -5 -3 -1 I C /IB =20 -3K Ta=-40 C -1K Ta=25 C C Ta=125 -500 -300 -3 -10 -30 -100 -300 -1 -1K -3 -10 VCE =-2V C Ta=1 25 -10 Ta=2 5 C Ta=40 C -100 -50 -30 -5 -3 0 -0.5 -100 -300 -1K fT - IC TRANSITION FREQUENCY f T (MHz) -1K -500 -300 -30 COLLECTOR CURRENT I C (mA) I C - VBE COLLECTOR CURRENT IC (mA) -1K -5K COLLECTOR CURRENT I C (mA) -1.0 BASE-EMITTER VOLTAGE VBE (V) 2002. 3. 29 -300 -100 -1 -1 -100 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -30 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -500 -300 -10 Revision No : 1 -1.5 1K VCE =-2V Ta=25 C 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) 3/4 KTX211U Q 1 (PNP TRANSISTOR) 1K COLLECTOR LPOWER DISSIPATION P C (mW) COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) C ob - VCB , C ib - VEB I E =0A f=1MHz Ta=25 C 500 300 100 50 30 C ib 10 C ob 5 3 1 -0.1 -0.3 -1 -3 -10 -30 Pc - Ta 250 200 150 100 50 0 0 25 -100 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 3k Ta=100 C 1 0.5 0.3 VO =0.2V 0.1 0.1 0.3 1 3 DC CURRENT GAIN G I 300 100 50 VO =5V 30 10 0 0.5 1.0 1.5 2 .0 2.5 3.0 INPUT OFF VOLTAGE V I(OFF) (V) INPUT ON VOLTAGE V I(ON) (V) GI - IO Q2 300 500 Ta=-25 C Ta=25 C Ta=-25 C 1k Ta=25 C 10 5 3 OUTPUT CURRENT IO (A) 50 30 I O - V I(OFF) Q2 Ta=100 C 100 OUTPUT CURRENT I O (mA) I O - V I(ON) Q2 100 50 30 00 =1 Ta C Ta=25 C Ta=-25 C 10 5 VO =5V 3 1 3 10 30 100 OUTPUT CURRENT I O (mA) 2002. 3. 29 Revision No : 1 4/4