2SK2315 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline 2SK2315 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 2 A 4 A 2 A 1 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 1 2 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7mm) 3. Marking is "TY" Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 5 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 5 A VDS = 50 V, VGS = 0 Gate to source cutoff voltage 0.5 -- 1.5 V ID = 1 mA, VDS = 10 V -- 0.4 0.6 ID = 0.3 A 1 VGS = 3 V* -- 0.35 0.45 ID = 1 A 1 VGS = 4 V* VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance |yfs| 1.5 1.8 -- S ID = 1 A 1 VDS = 10 V* Input capacitance Ciss -- 173 -- pF VDS = 10 V VGS = 0 f = 1 MHz Output capacitance Coss -- 85 -- pF Reverse transfer capacitance Crss -- 23 -- pF Turn-on time ton -- 21 -- ns Turn-off time toff -- 85 -- ns Note 2 1. Pulse Test ID = 1 A, RL = 30 VGS = 10 V 2SK2315 Power vs. Temperature Derating Maximum Safe Operation Area 5 100 s I D (A) 2 1.2 PW 1 0.5 1 = m s 10 m s Drain Current n tio ra pe 0.4 0.2 O 0.8 C D Operation in this area is limited by R DS(on) 0.1 0.05 0.02 Ta = 25 C 1 shot pulse 0.01 0 50 100 Ambient Temperature 150 0.005 0.2 200 Typical Output Characteristics 1 10 20 50 100 200 V DS (V) Typical Transfer Characteristics (A) ID 3V 2.5 V 2V 4 3 2 4 6 Drain to Source Voltage 8 10 V DS (V) Tc = 75 C 25 C -25 C 2 1 V GS = 1.5 V 0 5 5 3 2 2 Ta = 25 C Pulse Test Drain Current I D (A) 4 10 V 5V 4V 3.5 V 0.5 1 Drain to Source Voltage Ta (C) 5 Drain Current Channel Dissipation Pch** (W) (** on the almina ceramic board) 1.6 0 V DS = 10 V Pulse Test 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK2315 Static Drain to Source State Resistance vs. Drain Current Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test Ta = 25 C 0.8 0.6 I D= 2 A 0.4 1A 0.2 0 4 Drain to Source On State Resistance R DS(on) ( ) 1.0 0.5 A 4 8 12 Gate to Source Voltage 16 0.8 I D= 2 A 0.6 VGS = 3 V 1A 0.2 0 -40 VGS = 10 V 2 Ta = 25 C Pulse Test 1 VGS = 3 V 0.5 10 V 0.2 0.1 0.2 V GS (V) Static Drain to Source on State Resistance vs. Temperature 1.0 0.4 5 0.05 0.1 20 0.5 A 1A 0.5 A I D= 2 A 0 40 80 120 160 Case Temperature Tc (C) 0.5 1 Drain Current 2 5 I D (A) 10 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 5 2 Tc = -25 C 25 C 75 C 1 0.5 V DS = 10 V Pulse Test 0.2 0.1 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK2315 Typical Capacitance vs. Drain to Source Voltage Coss Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 20 V DD = 50 V 25 V 10 V 80 12 VDS 40 50 0 Reverse Drain Current I DR (A) Switching Time t (ns) t d(off) tf t d(on) 5 2 0.05 0.1 V GS = 10 V, PW = 2 s V DD = 30 V, duty < 1 % 0.2 0.5 Drain Current 1 2 I D (A) 2 4 6 8 Gate Charge Qg (nc) 0 10 5 50 tr 4 V DD = 50 V 25 V 10 V Reverse Drain Current vs. Souece to Drain Voltage 100 10 8 I D= 2 A 20 Switching Characteristics 20 16 60 Drain to Source Voltage V DS (V) 200 VGS Gate to Source Voltage V DS (V) Ciss 100 Drain to Source Voltage Capacitance C (pF) 100 V GS (V) Dynamic Input Characteristics 1000 5 Pulse Test 4 3 10 V 2 5V V GS = 0 1 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) 5 2SK2315 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6