2SK2315
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source.
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
2SK2315
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID2A
Drain peak current ID(pulse)*1±4A
Body to drain diode reverse drain current IDR 2A
Channel dissipation Pch*21W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
3. Marking is “TY”
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±5µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS ——5 µAV
DS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.4 0.6 ΩID = 0.3 A
VGS = 3 V*1
— 0.35 0.45 ΩID = 1 A
VGS = 4 V*1
Forward transfer admittance |yfs| 1.5 1.8 — S ID = 1 A
VDS = 10 V*1
Input capacitance Ciss — 173 — pF VDS = 10 V
VGS = 0
f = 1 MHz
Output capacitance Coss — 85 — pF
Reverse transfer capacitance Crss — 23 — pF
Turn-on time ton —21—nsI
D
= 1 A, RL = 30 Ω
VGS = 10 V
Turn-off time toff —85—ns
Note 1. Pulse Test
2SK2315
3
1.6
1.2
0.8
0.4
0
Channel Dissipation Pch** (W)
(** on the almina ceramic board)
50 100 150 200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
5
2
1
0.5
0.2
0.1
0.02
0.05
0.01
0.005
0.2 0.5 1 2 5 10 20 50 100 200
1 ms
Operation in
this area is
limited by RDS(on)
PW = 10 ms
100 µs
Ta = 25 °C
1 shot pulse
DC Operation
5
4
3
2
1
0Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
246810
3 V
2.5 V
2 V
Ta = 25 °C
Pulse Test
V = 1.5 V
GS
10 V
5 V
4 V
3.5 V
5
4
3
2
1
0Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Tc = 75 °C
25 °C
–25 °C
V = 10 V
Pulse Test
DS
12345
2SK2315
4
1.0
0.8
0.6
0.4
0.2
0Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
4 8 12 16 20
1 A
0.5 A
I = 2 A
D
Pulse Test
Ta = 25 °C
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
Ω
DS(on)
Static Drain to Source State Resistance
vs. Drain Current
0.1
5
2
1
0.2
0.5
0.1
0.05 0.2 0.5 1 2 5 10
10 V
Ta = 25 °C
Pulse Test
V = 3 V
GS
1.0
0.8
0.6
0.4
0.2
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
1 A
0.5 A
V = 10 V
GS I = 2 A
D
V = 3 V
GS
I = 2 A
D
1 A 0.5 A
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
10
2
5
1
0.2
0.5
0.1
0.1 0.2 0.5 1 2 5 10
DS
V = 10 V
Pulse Test
Tc = –25 °C
25 °C
75 °C
2SK2315
5
1000
100
10
10
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10 20 30 40 50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
100
80
60
40
20
0Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
VGS
DS
V
V = 50 V
25 V
10 V
DD
I = 2 A
D
246810
V = 50 V
25 V
10 V
DD
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.05 0.1 0.2 0.5 1 2 5
200
100
20
50
10
2
5V = 10 V, PW = 2 µs
V = 30 V, duty < 1 %
GS
DD
tf
r
td(on)
t
d(off)
t
5
4
3
2
1
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Souece to Drain Voltage
10 V 5 V
V = 0
GS
Pulse Test
2SK2315
6
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
