TetraFET D2001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED C 2 N (typ) 1 B A 3 D (2 pls) F (2 pls) H J FEATURES * SIMPLIFIED AMPLIFIER DESIGN M E I K G * SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1 SOURCE PIN 3 GATE PIN 2 DRAIN * LOW Crss * SIMPLE BIAS CIRCUITS DIM mm A 16.51 B 6.35 C 45 D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45 Tol. 0.25 0.13 5 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45 Tol. 0.010 0.005 5 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V 20V 1A -65 to 150C 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 6863 Issue 2 D2001UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain-Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 A VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.2A GPS Common Source Power Gain PO = 2.5W Drain Efficiency VDS = 28V IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 0.1A f = 1GHz 65 1 0.18 S 13 dB 40 % 20:1 -- Ciss Input Capacitance VDS = 28V VGS = -5V f = 1MHz 12 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 pF * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 10C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 6863 Issue 2 D2001UK 20 60 18 50 Power added efficiency (%) 16 Gain (dB) 14 12 10 8 F= 1GHz Idq= 0.1A Vds= 28V Tuned for maximum power 6 Tuned for maximum gain at 2.5 W 4 40 30 F= 1GHz Idq= 0.1A Vds= 28V 20 Tuned for maximum power Tuned for maximum gain at 2.5W 10 2 0 0 0 1 2 3 4 5 6 7 0 1 2 3 Pout (W) 4 5 6 7 Pout (W) Figure 1 Figure 2 Gain vs. Output Power. Power added efficiency vs. Output Power. 0 7 -5 6 -10 -15 IMD 3 (dBc) Pout (W) 5 4 F= 1GHz Idq= 0.1A Vds= 28V 3 Tuned for maximum power 2 -20 -25 F1= 999.9MHz F2= 1GHz Idq= 0.1A Vds= 28V -30 -35 Tuned for maximum gain at 2.5 W Tuned for maximum Power -40 1 Tuned for maximum gain at 2.5 W -45 0 -50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 Pin (W) 4 5 6 7 PEP (W) Figure 3 Figure 4 Output Power vs. Input Power. IMD 3 vs. PEP Typical S Parameters ! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 Vds=28V, Idq=0.1A MHz S MA R 50 S11 mag 0.966 0.891 0.841 0.804 0.804 0.804 0.822 0.822 0.841 0.832 ang -47 -81 -103 -120 -134 -143 -147 -154 -162 -168 S21 mag 16.778 12.882 9.772 7.674 6.237 4.955 4.121 3.631 3.162 2.6 ang 144 118 99 84 69 59 54 45 36 30 S12 mag ang 0.01479 56 0.02114 34 0.02213 20 0.01995 11 0.01641 6 0.01175 9 0.00906 41 0.01109 73 0.01718 88 0.02344 94 S22 mag 0.923 0.841 0.794 0.759 0.75 0.767 0.776 0.813 0.813 0.804 ang -28 -48 -62 -73 -86 -97 -101 -107 -116 -122 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 6863 Issue 2 D2001UK 1.4 Drain Current (Amps) 1.2 VGS=13V 1.0 VGS=12V VGS=11V 0.8 VGS=10V VGS=9V VGS=8V 0.6 VGS=7V VGS=6V 0.4 VGS=5V 0.2 0.0 0 5 10 15 20 25 30 35 Drain Voltage (Volts) Figure 5 - Typical IV Characteristics. Capacitance pF 100 10 Output capacitance Input Capacitance 1 Reverse transfer capacitance 0.1 0 10 Vds V 20 30 Figure 6 - Typical CV Characteristics. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 6863 Issue 2 D2001UK + 2 8 V 2 2 G a te -B ia s 1 0 0 n F L 2 1 0 K 3 .3 K T 1 3 0 p F 0 .8 -1 0 p F 6 x 3 m m c o n ta c t p a d 1 0 0 n F T D 2 0 0 1 U K T 3 2 6 x 3 m m c o n ta c t p a d 1 0 0 u F 4 T L 1 T 5 T 6 3 0 p F 1 -1 0 p F 1 0 p F D2001UK 1GHz TEST FIXTURE Substrate 0.8mm PTFE/glass, Er = 2.5 All microstrip lines W = 2.4mm T1 T2, T5 T3 T4 T6 35 mm 15 mm 3 mm 4 mm 32 mm L1 L2 7 turns 24swg enamelled copper wire, 3mm i.d. 1.5 turns 24swg enamelled copper wire on ferrite core Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 6863 Issue 2