MUR120
Document Number 88683
21-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 200 V
IFSM 35 A
trr 25 ns
VF0.710 V
Tj max. 175 °C
Features
Glass passivated chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-204AC (DO-15)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol MUR120 Unit
Maximum repetitive peak reverse voltage VRRM 200 V
Working peak reverse voltage VRWM 200 V
Maximum DC blocking voltage VDC 200 V
Maximum average forward rectified current at TA = 130 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 35 A
Operating and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com
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Document Number 88683
21-Jul-05
MUR120
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: tp = 300 µs pulse, duty cycle 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol MUR120 Unit
Maximum instantaneous
forward voltage (1)
at 1.0 A,
at 1.0 A,
TJ = 25 °C
TJ = 150 °C
VF 0.875
0.710
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR 2.0
50
µA
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns
Maximum reverse recovery
time
at IF = 1.0 A, di/dt = 50 A/µs, VR= 30 V,
Irr= 10 % IRM
trr 35 ns
Maximum forward recovery
time
at IF = 1.0 A, di/dt = 100 A/µs, Irec to 1.0 V tfr 25 ns
Parameter Symbol MUR120 Unit
Typical Thermal Resistance Junction to Ambient (1) RθJA 27 °C/W
Figure 1. Forward Current Derating Curve
0
2.0
3.0
025 50 75 100 125 150 175
Average Forward Rectified Current (A)
Ambient Temperature (°C)
1.0
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
MUR120
Document Number 88683
21-Jul-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
80
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Current (A)
0.2
T
J
= 175°C
T
J
= 100°C
T
J
=25°C
020 6040 10080
Instantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 175°C
T
J
=25°C
0.001
0.01
1
0.1
10
100
T
J
= 100°C
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1
10
10
100
100
1000
T
J
=25°C
f = 1.0 MHz
Vsig = 50mV
p-p
0.034 (0.86)
0.028 (0.71)
Dia.
0.140 (3.6)
0.104 (2.6)
Dia.
0.230 (5.8)
0.300 (7.6)
1.0 (25.4)
min.
1.0 (25.4)
min.
DO-204AC (DO-15)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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