D2225UK
Prelim. 2/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
17.5W
40V
±20V
4A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
BC
A
E
FG
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN 1
PIN 3 – DRAIN 2
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE 2
PIN 7 – GATE 1
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm Tol. Inches Tol.
4.06 ±0.08 0.160 ±0.003
5.08 ±0.08 0.200 ±0.003
1.27 ±0.08 0.050 ±0.003
0.51 ±0.08 0.020 ±0.003
3.56 ±0.08 0.140 ±0.003
4.06 ±0.08 0.160 ±0.003
1.65 ±0.08 0.065 ±0.003
+0.25 +0.010
0.76 0.030
-0.00 -0.000
0.51 Min. 0.020 Min.
1.02 Max. 0.040 Max.
45° Max. 45° Max.
0° Min. 0° Min.
7° Max. 7° Max.
0.20 ±0.08 0.008 ±0.003
2.18 Max. 0.086 Max.
4.57 ±0.08 0.180 ±0.003
METAL GATE RF SILICON FET
TetraFET
ROHS COMPLIANT
Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
IDSS
IGSS
VGS(th)
gfs
GPS
η
VSWR
Ciss
Coss
Crss
D2225UK
Prelim. 2/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
VGS = 0 ID= 10mA
VDS = 12.5V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 0.2A
PO= 5W
VDS = 12.5V IDQ = 0.2A
f = 1GHz
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
40
1
1
0.5 7
0.18
10
40
20:1
12
10
1
RTHj–case Thermal Resistance Junction – Case Max. 6°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
PER SIDE
TOTAL DEVICE
PER SIDE
