To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
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does not warrant that such information is error free. Ren esas E lectronics assumes no liability whatsoever for any da mages
incurred by you resulting from errors in or omissions from the information included herein.
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“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
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8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate an d malfunct ion s under certai n u se cond ition s. Further,
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(Note 1) “Renesas Electronics” as us ed in this document means Renesas Electronics Corporation and also includes its majo ri ty-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.3.00 Dec 20, 2006 page 1 of 7
BCR12PM-12LC
Triac
Medium Power Use
REJ03G1261-0300
Rev.3.00
Dec 20, 2006
Features
• IT (RMS) : 12 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTIII : 50 mA
• Viso : 1500 V
• The product guarant eed maxi mum junction
temperature 150°C.
• Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code:
PRSS0003AA-B
(Package name:
TO-220F(2) )
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
2
1
3
2
1
3
Applications
Heater control, motor control
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 700 V
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 12 A Commercial frequency, sine full wave
360° conduction, Tc = 77°C
Surge on-state current ITSM 72 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 21.6 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipati on PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 °C
Storage temperature Tstg – 40 to +150 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 1500 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitiv e peak off-st ate current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.8 V Tc = 25°C, ITM = 20 A,
Instantaneous measurement
Ι V
FGTΙ — — 1.5 V
ΙΙ V
RGTΙ — — 1.5 V
Gate trigger voltageNote2
ΙΙΙ V
RGTΙΙΙ — — 1.5 V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι I
FGTΙ — — 50 mA
ΙΙ I
RGTΙ — — 50 mA
Gate trigger currentNote2
ΙΙΙ I
RGTΙΙΙ — — 50 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 4.3 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 10 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate tr igger ch aract eri stics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
3. Peak off-state voltage
V
D = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
100101102
3725 3725
Conduction Time (Cycles at 60Hz)
80
40
30
20
0
10
70
50
60
Surge On-State Current (A)
V
GD
= 0.2 V
V
GT
= 1.5 V
Gate Characteristics (I, II and III)
Gate Current (mA)
23 5710
2
10
1
23 5710
3
23 5710
4
Gate Voltage (V)
7
5
7
5
7
5
3
2
3
2
3
2
101
102
100
10–1
Typical Example
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
–60 –40–20 0 20 40 60 80 100 120140160
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
103
7
5
3
2
7
5
3
2
102
101
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
–60 –40–20 0 20 40 60 80 100120 140160
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C) × 100 (%)
103
7
5
3
2
7
5
3
2
102
101
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60 Hz)
Transient Thermal Impedance (°C/W)
P
G(AV)
= 0.5 W
V
GM
= 10 V
P
GM
= 5 W
I
GM
= 2 A
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
102
7
5
3
2
7
5
3
2
7
5
3
2
101
100
10–1
Tj = 25°C
I
FGTI
I
RGTI
I
RGTIII
Typical Example
I
FGT I
I
RGT I
I
RGT III
23 5710
0
10
–1
23 57
23 5710
3
23 57
10
1
23 5710
2
10
2
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 4 of 7
No Fins
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
10
–1
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
Conduction Time (Cycles at 60Hz)
23 572 3 57 2 3 5723 57 10
4
102
101105
103
0
10
6
2
8
4
14
16
12
18
20
0246 108121416
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
7
5
3
2
103
7
5
3
2
104
7
5
3
2
105
7
5
3
2
106
102
024681012 1614
RMS On-State Current (A)
0
20
40
80
60
100
120
140
160
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
0246810121416
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
0
20
40
80
60
100
120
140
160
Ambient Temperature (°C)
0 0.5 1.0 1.5 2.5 3.02.0
RMS On-State Current (A)
0
20
40
80
60
100
120
140
160
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
–60 –40–20 0 20 40 60 80 100120140160
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Typical Example
360° Conduction
Resistive,
inductive loads
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
All fins are black painted
aluminum and greased
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
60 × 60 × t2.3
120 × 120 × t2.3
100 × 100 × t2.3
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 5 of 7
Typical Example
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
–60 –40–20 0 20 40 60 80 100 120140 160
10
3
7
5
3
2
7
5
3
2
10
2
10
1
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
–60 –40 –20 0 604020 80 120100 160140
Rate of Rise of Off-State Voltage (V/µs)
23 5710
2
10123 5710
323 5710
4
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
0
20
40
80
60
100
120
160
140
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 125°C)
Typical Example
Tj = 125°C
I Quadrant
III Quadrant
I Quadrant
Minimum
Characteristics
Value
III Quadrant
Typical Example
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
–60 –40 –20 0 20 40 60 80 100 120 140160
0
20
40
80
60
100
120
140
160
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj = 125°C)
Typical Example
Tj = 125°C, I
T
= 4 A
τ = 500 µs, V
D
= 200 V
f = 3 Hz
2
3
5
7
2
3
5
7
7
10
1
10
0
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
10
0
10
1
10
2
3725 3725
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Rate of Rise of Off-State Voltage (V/µs)
23 5710
2
10123 5710
323 5710
4
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
0
20
40
80
60
100
120
160
140
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 150°C)
Typical Example
Tj = 150°C
I Quadrant
III Quadrant
Distribution T
2
+, G–
Typical Example
T
2
+, G+
Typical Example
T
2
–, G–
Typical Example
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 6 of 7
330 Ω
330 Ω
330 Ω
6 Ω
6 Ω
6 V
6 V
A
V
A
V
Gate Trigger Characteristics Test Circuits
6 Ω
6 V A
V
Test Procedure I
Test Procedure III
Test Procedure II
IRGT III
III Quadrant
Commutation Characteristics (Tj = 150°C
)
Typical Example
Tj = 150°C
IT = 4 A
τ = 500 µs
VD = 200 V
f = 3 Hz
2
3
5
7
2
3
5
7
7
10
1
10
0
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
10
0
10
1
10
2
3725 3725
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
0
10
1
10
2
3725 3725
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Typical Example
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
IFGT I
I Quadrant
IRGT I
BCR12PM-12LC
Rev.3.00 Dec 20, 2006 page 7 of 7
Package Dimensions
SC-67 2.0g
MASS[Typ.]
PRSS0003AA-B
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
10.5Max
1.3Max
φ3.2 ± 0.2
0.8
2.54 0.5 2.62.54
5.2 2.8
13.5Min 17
5.0
8.5
1.2
3.6
4.5
Package Name
TO-220F(2)
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name BCR12PM-12LC
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR12PM-12LC-A8
Note : Please confirm the specification about the shipping in detail.
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2006. Renesas Technology Corp., All rights res erved. Printed in J apan.
Colophon .7.0
