PAGE . 1
STAD-FEB.08.2007
MMBT2369A
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 15 V olts 225 mWatts
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 15V
• Collector current IC = 200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT -23, Plastic
• Terminals: Soldera ble per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: M3B
POWER
ABSOLUTE RATINGS
RETEMARAPlobmySeulaVstinU
egatloVrettimE-rotcelloC V
CEO
51V
egatloVesaB-rotcelloC V
CBO
04V
egatloVesaB-rettimE V
EBO
5.4V
suounitnoC-tnerruCrotcelloC I
C
002Am
THERMAL CHARACTERISTICS
RETEMARAPlobmySeulaVstinU
)1etoN(noitapissiDrewoPxaM P
TOT
522Wm
tneibmAotnoitcnuJ,ecnatsiseRlamrehT Rθ
JA
655
O
W/C
erutarepmeTnoitcnuJ T
J
051ot55-
O
C
erutarepmeTegarotS IT
STG
051ot55-
O
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
PAGE . 2
STAD-FEB.08.2007
MMBT2369A
RETEMARAPlobmySnoitidnoCtseT.NIM.XAMstinU
SCITSIRETCARAHCFFO
egatloVnwodkaerBrettimE-rotcelloCV
)RB(OEC
I
C
I,Am01=
B
0=51-V
egatloVnwodkaerBrettimE-rotcelloCV
)RB(SEC
I
C
I,Am01=
B
0=04-V
egatloVnwodkaerBesaB-rotcelloCV
)RB(OBC
I
C
I,Au01=
E
0=04-V
egatloVnwodkaerBesaB-rettimEV
)RB(OBE
I
E
I,Au01=
C
0=5.4-V
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V02=
E
0=
V
BC
I,V02=
E
T,0=
A
521=
O
C4.0 03 AuAu
SCITSIRETCARAHCNO
)2etoN(niaGtnerruCCDh
EF
I
C
V,Am01=
EC
V0.1=
I
C
V,Am01=
EC
T,V53.0=
A
55-=
O
C
I
C
V,Am03=
EC
V4.0=
I
C
V,Am001=
EC
V0.1=
04040302
021
-
egatloVnoitarutaSrettimE-rotcelloC )2etoN( V
CE(SAT)
I
C
I,Am01=
B
Am0.1=
I
C
I,Am01=
B
521=AT,Am0.1=
O
C
I
C
I,Am03=
B
Am0.3=
I
C
I,Am001=
B
Am01=
-
2.0 3.0 52.0 5.0
V
egatloVnoitarutaSrettimE-esaB )2etoN( V
BE(SAT)
I
C
I,Am01=
B
Am0.1=
I
C
I,Am01=
B
T,Am0.1=
A
55-=
O
C
I
C
I,Am01=
B
T,Am0.1=
A
521=
O
C
I
C
I,Am03=
B
Am0.3=
I
C
I,Am001=
B
Am01=
7.0
95.0
58.0 20.1
51.1 6.1
V
SCITSIRETCARAHCLANGISLLAMS
ecnaticapaCtuptuOC
OBO
V
BC
I,V5=
E
zHM1=f,0=-0.4Fp
ecnaticapaCtupnIC
IBO
V
BC
I,V5.0=
C
zHM1=f,0=-0.5Fp
niaGtnerruClangiS-llamSh
EF
I
C
V,Am01=
EC
,V01=
R
G
k0.2= ΩzHM001=f, 0.5 --
SCITSIRETCARAHCGNIHCTIWS
emiTegarotSt
s
I
B
I=1
B
I=2
C
Am01=-31sn
emiTnO-nruTt
no
V
CC
I,V3=
C
Am01=
I
B
Am0.3=1 -21 sn
emiTnO-nruTt
ffo
V
CC
I,V3=
C
Am01=
I
B
I,Am0.3=1
B
Am5.1=2 -81 sn
ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
PAGE . 3
STAD-FEB.08.2007
MMBT2369A
ELECTRICAL CHARACTERISTICS CURVE
Base-Emi tter ON Voltage vs
Co llector Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VO LTAGE (V)
BE(O N)
C
V = 1.0V
CE
- 40°C
25 °C
125 °C
Co llector-Cu to ff Cur rent
vs Amb ien t Temperatur e
25 50 75 100 125 150
1
10
100
600
T - AMBIE NT TEM P E RA T UR E ( C)
I - COLLECTOR CURR ENT (nA )
A
V = 20V
CB
°
CBO
P owe r Dis sipa t ion v s
Ambient Temperature
0255075100125150
0
100
200
300
400
500
TE MPE RATURE ( C )
P - POW ER D ISSIPAT IO N (mW)
°
D
SOT-23
DC Current Gai n
vs Col le c t or Curre nt
0.01 0.1 1 10 100
50
100
150
200
I - COLLECTOR CURRENT (mA)
h - DC CUR REN T GAIN
FE
C
V = 1 .0V
CE
- 40 ° C
25 ° C
125 °C
PAGE . 4
STAD-FEB.08.2007
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMBT2369A