a9 be Beae7esy oovsuaiao 6367254 MOTOROLA SC CXSTRS/R F) MOTOROLA m= SEMICONDUCTOR Pay TECHNICAL DATA 89D 79431 D T- 3 3-07 MRF5176 The RF Line NPN SILICON RF POWER TRANSISTOR ... designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-600 MHz frequency range. @ Specified 28 Volt, 400 MHz Characteristics Output Power = 15 Watts Minimum Gain = 10 dB Efficiency = 50% @ Characterized from 200 to 600 MHz 15 W 400 MHz RF POWER TRANSISTOR NPN SILICON @ Includes Series Equivatent [mpedances MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 33 Vde Collector-Base Voltage Vcso 60 Vdc Emitter-Base Voitage VeBO 4.0 Vde Collector Current Continuous Ic 2.0 Adc Total Device Dissipation @ T, = 25C (1) Pp 30 Watts Derate above 25C 170 mw/C Storage Temperature Range Tsg +65 to +200 % (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 6.0 cw 4 COLLECTOR CASE 244-04 MOTOROLA RF DEVICE DATA 3-921 MRF5176 Characteristic OFF CHARACTERISTICS 6367254 MOTOROLA SC CXSTRS/R F) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) | Symbol | aq DE Bpese7254 oovdac 89D 79432 D T-33-09 Max l Unit | Coltector-Emitter Breakdown Voltage {te = 50 mAdc, Ig = 0) V(BRICEO 33 Vde Collector-Emitter Breakdown Voltage {lg = 50 mAdc, Vge_ = 0} V(BRICES 60 Vde Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, I = 0} ViBRJEBO 4.0 Vde Collector Cutoff Current (Veg = 30 Vde, Ie = 0} 'cBo - mAdc ON CHARACTERISTICS DC Current Gain } (Ie = 500 mAde, Vig = 5.0 Vde) DYNAMIC CHARACTERISTICS | Output Capacitance j (Vig = 30 Vdc, Ie = 0, f = 1.0 MHz} FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (Voc = 28 Vdc, Poyt = 15 W, f = 400 MHz) Catlector Efficiency (Voce = 28 Vde, Pout = 15 W, f = 400 MHz} FIGURE 1 400 MHz TEST CIRCUIT SCHEMATIC RE tnput C1,C10 0,018 uF VITRAMON Chip C2,C3,C8 1.0-20 pF JOHANSON Type 3906 ca 100 pF UNDERWOOD (UNELCO) C5,C6 56 pF ATC Chip c7 0.1 uF ERIE Disc Ceramic cs 1.0-20 pF JOHANSON Type 3906 cit 1.0F,35 V TANTALUM C12,C13 680 pF ALLEN BRADLEY Feedthru fre 9B heh atte ui L2 b3 L4 L5 3.9 BH Molded Choke Ferrite Bead, FERROXCUBE, 56 590 65-3B 3 Turns, #20 AWG, 0.1" 1D 6 Turns, #20 AWG, 1/4 1D 22 Ferrite Choke, FERROXCUBE, VK200-20-4B MOTOROLA RF DEVICE DATA 3-922 R1 207 2, 1/8 W, 10% R2 5.1 2, 1/8 W, 10% 21 Microstrip Line, 0.17 Wx 1.2". Microstrip Line, 0.25 Wx 0.7" L 23,24 Microstrip Line, 0.075" Wx 1.25L Board Glass Teflon, R = 2.56, t = 0.062 (nput/Output Connectors Type N 6367254 MOTOROLA SC (XSTRS/R F) MRF5176 n Pow oo ron aon Pout, OUTPUT POWER (WATTS) S prog et bi nN rn Pow Sa a zi a o 15 Pout. CUTPUT POWER (WATTS) nb in Pos ons Po an 5 a 3 Vee = ns S 3S Vde 300 350 40 = 460 500 f, FREQUENCY (MHz) FIGURE 2 OUTPUT POWER versus FREQUENCY Pout, OUTPUT POWER (WATTS) 550 600 650 FIGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE 16 18 20) 62 24 Veo, SUPPLY VOLTAGE (VOLTS) 26 = ~ oem eo SB 2 Sw Pw coho am & 8 GB min a9 DE Bfeae7254 covsuaa 4 89D 79433 FIGURE 3 OUTPUT POWER versus INPUT POWER 10 3.0 40 5.0 Pin, INPUT POWER (WATTS} FIGURE 5 SERIES EQUIVALENT IMPEDANCE sh Pe Ne SPENCE = 28 Vide 2 Pour 15 W 6 FIGURE 6 400 MHz TEST CIRCUIT x Frequency x 200 MHz |1.0-[1-0| 5.1-j15 [% % x 400 MHz |1.2+ 1.0] 6.0-j10 600 MHz |1,5+)4.0] 8.0-j2.0]> MOTOROLA RF DEVICE DATA 3-923 DT-33-09