Base part number Standard Pack Orderable Part Number
Form Quantity
IRF6894MTRPbF DirectFET® Medium Can Tape and Reel 4800 IRF6894MTRPbF
Package Type
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
MX
VDSS VGS RDS(on) RDS(on)
25V min ±16V max 0.9m@ 10V 1.4m@ 4.5V
Applicable DirectFET™ Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MP
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce
both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 25
VGS Gate-to-Source Voltage ±16
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 37
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 29
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 163
IDM Pulsed Drain Current 296
EAS Single Pulse Avalanche Energy 540 mJ
IAR Avalanche Current 30 A
V
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A.
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6894MPbF
IRF6894MTRPbF
Typical values (unless otherwise specified)
HEXFET® Power MOSFET plus Schottky Diode
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
31nC 10nC 3.0nC 58nC 33nC 1.6V
RoHs Compliant Containing No Lead and Bromide
Integrated Monolithic Schottky Diode
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
Footprint compatible to DirectFET DD
G
S
S
1 2016-10-13
246810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
Typical R
DS(on)
(m)
ID = 37A
TJ = 25°C
TJ = 125°C
0 102030405060708090
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 20V
VDS= 13V
VDS= 5V
ID= 30A
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2 2016-10-13
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 1.0mA
VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ID = 10mA (25°C-125°C)
RDS(on) Static Drain-to-Source On-Resistance ––– 0.9 1.3 m VGS = 10V, ID = 37A
––– 1.4 1.8 VGS = 4.5V, ID = 30A
VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 100µA
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ––– -3.8 ––– mV/°C VDS = VGS, ID = 10mA
IDSS Drain-to-Source Leakage Current ––– ––– 500 µA VDS = 20 V, VGS = 0V
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
gfs Forward Transconductance 193 ––– ––– S VDS = 13V, ID = 30A
Qg Total Gate Charge ––– 31 47
nC
Qgs1 Pre– Vth Gate-to-Source Charge ––– 8.1 ––– VDS = 13V
Qgs2 Post– Vth Gate-to-Source Charge ––– 3.0 ––– VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 10 ––– ID = 30A
Qgodr Gate Charge Overdrive ––– 10 ––– See Fig 15
Qsw Switch Charge (Qgs2 + Qgd) ––– 13 –––
Qoss Output Charge ––– 33 ––– nCVDS = 16V, VGS = 0V
RG Gate Resistance ––– 0.2 –––
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 13V, VGS = 4.5V
tr Rise Time ––– 47 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 23 ––– RG= 1.8
tf Fall Time ––– 13 ––– See Fig 17
Ciss Input Capacitance ––– 4232 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1260 ––– VDS = 13V
Crss Reverse Transfer Capacitance ––– 255 ––– ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 37
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 296 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 0.75 V TJ = 25°C, IS = 30A, VGS = 0V
trr Reverse Recovery Time ––– 28 42 ns TJ = 25°C, IF = 30A
Qrr Reverse Recovery Charge ––– 58 87 nC di/dt = 320A/µs
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
IRF6894MTRPbF
3 2016-10-13
Absolute Maximum Ratings
Symbol Parameter Max. Units
PD @TA = 25°C Power Dissipation 2.8
PD @TA = 70°C Power Dissipation 1.8 W
PD @TC = 25°C Power Dissipation 54
TP Peak Soldering Temperature 270
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 45
RJA Junction-to-Ambient 12.5 –––
RJA Junction-to-Ambient 20 ––– °C/W
RJC Junction-to-Can ––– 2.3
RJA-PCB Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor W/°C
0.022
.
Fig 3.Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R is measured at TJ of approximately 90°C.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
IRF6894MTRPbF
4 2016-10-13
Fig 4. Typical Output Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Transfer Characteristics
Fig 5. Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 150°C
2.5V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
Typical RDS(on) (Normalized)
ID = 37A VGS = 10V
VGS = 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
025 50 75 100 125 150 175 200
ID, Drain Current (A)
0.0
1.0
2.0
3.0
4.0
5.0
Typical RDS(on) (
m)
TJ = 25°C Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
Fig 9. Typical On-Resistance vs. Drain Current
and Gate Voltage
IRF6894MTRPbF
5 2016-10-13
Fig 11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 10. Typical Source-Drain Diode Forward Voltage
0.1 0.4 0.7 1.0
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25 50 75 100 125 150
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
ID, Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
Typical VGS(th) Gate threshold Voltage (V)
ID = 10mA
0.0 0.1 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
500
1000
1500
2000
2500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2.0A
3.0A
BOTTOM 30A
Fig 13. Typical Threshold Voltage vs. Junction Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
IRF6894MTRPbF
6 2016-10-13
Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform
Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
IRF6894MTRPbF
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DirectFET™ Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
G
S
G=GATE
D=DRAIN
S=SOURCE
S
D
DD
D
Note: For the most current drawing please refer to website at http://www.irf.com/package/
IRF6894MTRPbF
8 2016-10-13
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.023
0.003
0.007
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
0.595
0.080
0.17
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.535
0.020
0.08
MIN
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.021
0.001
0.003
DIMENSIONS
METRIC IMPERIAL
Note: For the most current drawing please refer to website at http://www.irf.com/package/
IRF6894MTRPbF
9 2016-10-13
DirectFET™ Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to website at http://www.irf.com/package/
IRF6894MTRPbF
10 2016-10-13
Qualification Information
Qualification Level Industrial†
Moisture Sensitivity Level DirectFET™ Medium Can MSL1
(per JEDEC J-STD-020D†)
RoHS Compliant Yes
† Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comment
10/13/2016
Changed datasheet with “Infineon” logo –all pages.
Changed Rth from “60°C/W” to “45°C/W” –page 3
Changed ID @ TA 25C/70C from “32A/25A” to “37A/29A” –page 1 & 2.
Changed Fig.1 to Fig.15 –page 1 to 9.
Added disclaimer on last page.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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