TOPAZ SEMICONDUCTOR OSE D A ioase2b O0o09485 oO i SEMICONDUCTOR 7-29-25 2N7009 N-CHANNEL ENHANCENENT-MODE D-MOS POWER FETs ORDERING INFORMATION FEATURES @ High Gate Oxide Breakdown, --40V min. @ Low Output and Transfer Capacitances lM Extended Safe Operating Area TO-226AA (TO-92) Plastic Package 2N7000 Description 60V, 5 ohm APPLICATIONS M High-Speed Pulse Amplifiers Hf Logic Buffers @ Line Drivers @ Solid-State Relays Bi Motor Controls MM Power Supplies ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) Drain-Source Voltage ....... ccc cece eee eee +60V Continuous Device Dissipation ...........06 400mWw Linear Derating Factor .......... cece 3.2mW/C Drain-Gate Voltage (Vas=0) ...........- eee aue +60V ge (Vas= 0) Pulsed Device Dissipation .................. 3.125W Gate-Source Voltage .....ccesseeeescaeeeerens +40V Linear Derating Factor ..............5.. 25mW/C Continuous Drain Current _ ; one Operating Junction Ta = 25C Te = 25C Temperature Range ....sesceees cen vace -65 to +150C 21A .32A Storage Temperature Range .......... -55 to +150C Peak Pulsed Drain Current .........000.00c00s 0.79A Lead Temperature (1/16" from mounting surface for 30 SEC) cee i cece cere cece ee eee +3800C SCHEMATIC DIAGRAM/PACKAGE PACKAGE DIMENSIONS (TO-92) TO-226AA (See Package 5) DRAIN 4 4 I { GATE A { oa ao od 6 DO SOURCE 3-29 0-88-6 TOPAZ SEMICONDUCTOR OSE D i voasea. oo00%6b 1h i THEA Z ON. SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (Tc = +25C unless otherwise noted) # CHARACTERISTIC 2N7000 UNIT | TEST CONDITIONS MIN TYP MAX 1 BVoss Drain-Source 60 100 Vv Ip = 104A, Ves = 0 Breakdown Voltage 2 Vestm Gate-Source 0.8 1.9 3.0 Vv lo = 1.0MA, Vos = Ves Threshold Voltage 3 less Gate-Body +1.0 +10 nA Ves = 15V, Vos = 0 Leakage Current 4 lpss Drain-Source OFF 0.1 1.0 uA Vos = 48V, oO = - Ves = 0 5 - Leakage Current 01 1.0 mA | Tg = +125C 6 ines = ON Drain Current 75 mA | Vos = 10V, Ves = 4.5V (Note 1) , Vosion Drain-Source 04 (Note oC b= 75mA ON Voltage 8 15 25 Vv Ves = 10V, lp = 0.54 (Note 1) 9 Drain-Source 3.0 5.0 ohms | Ves= 10V, lp=0.5A Toston ON Resistance (Note 1) 10 47 9.0 To = +125C Ots Common-Source 100 mmhos | Vps = 10V, lp = 0.2A 11 Forward Transcond. f=1KHz (Note 1) 12 Cis Common-Source 60 Input Capacitance 13 g Crss Common-Source 1.3 5.0 pF Vos = Ves = 0 $ Reverse Transfer f= 1MHz 3 Capacitance 14 Coss | Common-Source 10.5 25 Output Capacitance 15 ton Turn-On Time 5.0 10 nSec | Vop = 15V, Vatom = 10V 16 tott Turn-Off Time 6.0 10 Re = 250, Ri = 259 Note 1: Pulse Test 804 Sec, 1% Duty Cycle 3-30 TOPAZ SEMICONDUCTOR OSE D i q0as522b OOogqa? 3 i WAFAZ SEMICONDUCTOR 1-29-25 2N7000 TYPICAL PERFORMANCE CHARACTERISTICS (T. = +25C unless otherwise specified) DRAIN-SOURCE ON RESISTANCE GATE-SOURCE VOLTAGE fp s{on)~DRAIN-SOURCE ON RESISTANCE~-(ohms) tpfony-ON DRAIN CURRENT(Ampes) TEST 1% DUTY VasGATE-SOURCE VOLTAGE (Volts) Fos{onjDRAIN-SOURCE ON VOLTAGE(Votts) ON DRAIN CURRENT Vvs GATE-SOURCE VOLTAGE = 10V TEST 1% DUTY CYCLE DRAIN-SOURCE ON VOLTAGE GATE-SOURCE VOLTAGE Ip = 75mA PULSE TEST 80Sec, 1% DUTY CYCLE 0.8 \ To = +125G NY 1 Te = 428C 0.2 Vas-GATE-SOURCE VOLTAGE (Volts) FORWARD TRANSCONDUCTANCE ON DRAIN CURRENT QtFORWARD TRANSCONDUCTANCE(mS) 700) Vos = 10V (= IKHz PULSE TEST oe BqyGec, 1% DUTY CYCLE Lt 00 / of 02 03 04 Os as a7 VagGATE-SOURCE VOLTAGE~-(Volts) loON DRAIN CURRENT{Amps) 3-31