150K(R)20A thru 150K(R)100A Silicon Standard Recovery Diode VRRM = 200 V - 1000 V IF =150 A Features * High Surge Capability * Types up to 1000 V VRRM DO-8 Package Standard 2 "R" Orientation 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Conditions 150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit Parameter Symbol Repetitive p p peak reverse voltage g VRRM 200 400 600 800 1000 V DC blocking voltage VDC 200 400 600 800 1000 V 150 A 3740 A Continuous forward current IF TC 110 C 150 150 150 150 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 3740 3740 3740 3740 I2t for fusing Operating temperature Storage temperature I2 t Tj Tstg 58000 -40 to 200 -40 to 200 58000 -40 to 200 -40 to 200 58000 -40 to 200 -40 to 200 58000 -40 to 200 -40 to 200 t = 8.3ms 58000 A2sec -40 to 200 C -40 to 200 C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit Diode forward voltage VF IF = 150 A, Tj = 25 C 1.33 1.33 1.33 1.33 1.33 V Reverse current IR VR = VRRM, Tj = 175 C 35 35 35 32 24 mA 0.25 0.25 0.25 0.25 0.25 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 150K(R)20A thru 150K(R)100A www.genesicsemi.com 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 150K20A 150KR20A 150K40A 150KR40A 150K60A 150KR60A 150K80A 150KR80A 150K100A 150KR100A