LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
www.ti.com
SNVS743D DECEMBER 1999REVISED MARCH 2013
LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode
Check for Samples: LM185-2.5-N,LM285-2.5-N,LM385-2.5-N
Careful design of the LM185-2.5-N has made the
1FEATURES device exceptionally tolerant of capacitive loading,
2 ±20 mV 0.8%) max. Initial Tolerance (A making it easy to use in almost any reference
Grade) application. The wide dynamic operating range allows
Operating Current of 20 μA to 20 mA its use with widely varying supplies with excellent
regulation.
0.6ΩDynamic Impedance (A Grade) The extremely low power drain of the LM185-2.5-N
Low Temperature Coefficient makes it useful for micropower circuitry. This voltage
Low Voltage Reference—2.5V reference can be used to make portable meters,
1.2V Device and Adjustable Device Also regulators or general purpose analog circuitry with
Available—LM185-1.2 Series and LM185 battery life approaching shelf life. Further, the wide
Series, respectively operating current allows it to replace older references
with a tighter tolerance part. For applications requiring
1.2V see LM185-1.2.
DESCRIPTION
The LM185-2.5-N/LM285-2.5-N/LM385-2.5-N are The LM185-2.5-N is rated for operation over a 55°C
micropower 2-terminal band-gap voltage regulator to 125°C temperature range while the LM285-2.5-N is
diodes. Operating over a 20 μA to 20 mA current rated 40°C to 85°C and the LM385-2.5-N 0°C to
range, they feature exceptionally low dynamic 70°C. The LM185-2.5-N/LM285-2.5-N are available in
impedance and good temperature stability. On-chip a hermetic TO package and the LM285-2.5-N/LM385-
trimming is used to provide tight voltage tolerance. 2.5-N are also available in a low-cost TO-92 molded
Since the LM-185-2.5-N band-gap reference uses package, as well as SOIC and SOT-23. The LM185-
only transistors and resistors, low noise and good 2.5-N is also available in a hermetic leadless chip
long term stability result. carrier package.
Connection Diagram
Figure 1. TO-92 Package Figure 2. SOIC Package
(Bottom View) See Package Number D0008A
See Package Number LP0003A
* Pin 3 is attached to the Die Attach Pad (DAP) and should be connected to Pin 2 or left floating.
Figure 3. SOT-23
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
SNVS743D DECEMBER 1999REVISED MARCH 2013
www.ti.com
Figure 4. LCCC Leadless Chip Carrier Figure 5. TO Package
See Package Number NAJ0020A (Bottom View)
See Package Number NDU0002A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Reverse Current 30 mA
Forward Current 10 mA
LM185-2.5-N 55°C to + 125°C
Operating Temperature Range(4) LM285-2.5-N 40°C to + 85°C
LM385-2.5-N 0°C to 70°C
ESD Susceptibility(5) 2kV
Storage Temperature 55°C to + 150°C
TO-92 Package (10 sec.) 260°C
TO Package (10 sec.) 300°C
Soldering Information Vapor Phase (60 sec.) 215°C
SOIC and SOT-23 Package Infrared (15 sec.) 220°C
See http://www.ti.com for other methods of soldering surface mount devices.
(1) Refer to RETS185H-2.5 for military specifications.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For elevated temperature operation, TJ MAX is:
LM185-N: 150°C
LM285-N: 125°C
LM385-N: 100°C
See THERMAL CHARACTERISTICS.
(5) The human body model is a 100 pF capacitor discharged through a 1.5 kresistor into each pin.
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
LM185 150°C
LM285 125°C
Thermal Resistance SOIC-8 SOT-23
LM385 100°C
TO-92 TO
θja (Junction to Ambient) 180°C/W (0.4Leads) 440°C/W 165°C/W 283°C/W
170°C/W (0.125Leads)
θjc (Junction to Case) N/A 80°C/W N/A N/A
2Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
www.ti.com
SNVS743D DECEMBER 1999REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS
LM385A-2.5-N
LM385AX-2.5-N Units
Parameter Conditions Typ (Limits)
LM385AY-2.5-N
Tested Limit(2) Design Limit(3)
Reverse Breakdown IR= 100 μA 2.500 2.480 V(Min)
Voltage 2.520 V(Max)
2.500 2.470 V(Min)
2.530 V(Max)
Minimum Operating 12 18 20 μA
Current (Max)
Reverse Breakdown IMIN IR1mA 1 1.5 mV
Voltage Change with (Max)
Current 1 mA IR20 mA 10 20 mV
(Max)
Reverse Dynamic IR= 100 μA, 0.2 0.6 Ω
Impedance f = 20 Hz 1.5
Wideband Noise (rms) IR= 100 μA 120 μV
10 Hz f10 kHz
Long Term Stability IR= 100 μA, T = 1000 Hr, 20 ppm
TA= 25°C ±0.1°C
Average Temperature Coefficient(4) IMIN IR20 mA
X Suffix 30 ppm/°C
Y Suffix 50 (Max)
All Others 150
(1) Parameters identified with boldface type apply at temperature extremes. All other numbers apply at TA= TJ= 25°C.
(2) Specified and 100% production tested.
(3) Specified, but not 100% production tested. These limits are not used to calculate average outgoing quality levels.
(4) The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between
the operating TMAX and TMIN, divided by TMAX–TMIN. The measured temperatures are 55°C, 40°C, 0°C, 25°C, 70°C, 85°C, 125°C.
Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
SNVS743D DECEMBER 1999REVISED MARCH 2013
www.ti.com
ELECTRICAL CHARACTERISTICS LM185-2.5-N LM385B-2.5-N
LM185BX-2.5-N
LM185BY-2.5-N LM385BX-2.5-N LM385-2.5-N
LM285-2.5-N Units
Parameter Conditions Typ (Limit)
LM285BX-2.5-N LM385BY-2.5-N
LM285BY-2.5-N
Tested Limit(1)(2) Design Tested Design Tested Design
Limit(3) Limit(1) Limit(3) Limit(1) Limit(3)
Reverse Breakdown TA= 25°C, 2.5 2.462 2.462 2.425 V(Min)
Voltage 20 μAIR20 mA 2.538 2.538 2.575 V(Max)
Minimum Operating 13 20 30 20 30 20 30 μA
Current (Max)
LM385M3-2.5-N 15 20
Reverse Breakdown 20 μAIR1 mA 1 1.5 2.0 2.5 2.0 2.5 mV
Voltage Change (Max)
with Current 1 mA IR20 mA 10 20 20 25 20 25 mV
(Max)
Reverse Dynamic IR= 100 μA, 1 Ω
Impedance f = 20 Hz
Wideband Noise IR= 100 μA, 120 μV
(rms) 10 Hz f10 kHz
Long Term Stability IR= 100 μA,
T = 1000 Hr, 20 ppm
TA= 25°C ±0.1°C
Average IR= 100 μA
Temperature X Suffix 30 30 ppm/°C
Coefficient(4) Y Suffix 50 50 ppm/°C
All Others 150 150 150 ppm/°C
(Max)
(1) Specified and 100% production tested.
(2) A military RETS electrical specification available on request.
(3) Specified, but not 100% production tested. These limits are not used to calculate average outgoing quality levels.
(4) The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between
the operating TMAX and TMIN, divided by TMAX–TMIN. The measured temperatures are 55°C, 40°C, 0°C, 25°C, 70°C, 85°C, 125°C.
4Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
www.ti.com
SNVS743D DECEMBER 1999REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Characteristics Reverse Characteristics
Figure 6. Figure 7.
Forward Characteristics Temperature Drift
Figure 8. Figure 9.
Reverse Dynamic Reverse Dynamic
Impedance Impedance
Figure 10. Figure 11.
Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
SNVS743D DECEMBER 1999REVISED MARCH 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Noise Voltage Filtered Output Noise
Figure 12. Figure 13.
Response Time
Figure 14.
6Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
www.ti.com
SNVS743D DECEMBER 1999REVISED MARCH 2013
APPLICATIONS
Figure 15. Wide Input Range Reference Figure 16. Micropower Reference from 9V Battery
LM385-2.5-N Applications
IQ30 μA standby current
IQ40 μAFigure 17. Micropower 5V Reference Figure 18. Micropower 10V Reference
PRECISION 1 μA to 1 mA CURRENT SOURCES
Figure 19.
METER THERMOMETERS
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Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
SNVS743D DECEMBER 1999REVISED MARCH 2013
www.ti.com
Calibration
Calibration 1. Short LM385-2.5-N, adjust R3 for IOUT=temp at 1.8 μA/°K
1. Short LM385-2.5-N, adjust R3 for IOUT=temp at 1μA/°K. 2. Remove short, adjust R2 for correct reading in °F
2. Remove short, adjust R2 for correct reading in centigrade
Figure 20. 0°C–100°C Thermomemter Figure 21. 0°F–50°F Thermomemter
Adjustment Procedure
1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck
coefficient.
2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2.
Figure 22. Micropower Thermocouple Cold Junction Compensator
Thermocouple Type(1) Seebeck R1 R2 Voltage Across R1 Voltage Across R2
Coefficient (Ω) (Ω) @25°C (mV)
(μV/°C) (mV)
J 52.3 523 1.24k 15.60 14.32
T 42.8 432 1k 12.77 11.78
K 40.8 412 953Ω12.17 11.17
S 6.4 63.4 150Ω1.908 1.766
(1) Typical supply current 50 μA
8Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
www.ti.com
SNVS743D DECEMBER 1999REVISED MARCH 2013
Figure 23. Improving Regulation of Adjstable Regulators
Schematic Diagram
Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N, LM285-2.5-N, LM385-2.5-N
SNVS743D DECEMBER 1999REVISED MARCH 2013
www.ti.com
REVISION HISTORY
Changes from Revision C (March 2013) to Revision D Page
Changed layout of National Data Sheet to TI format ............................................................................................................ 9
10 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
www.ti.com 21-May-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM185BXH-2.5 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185BXH2.5
LM185BXH-2.5/NOPB ACTIVE TO NDU 2 1000 Green (RoHS
& no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185BXH2.5
LM185BYH-2.5 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185BYH2.5
LM185BYH-2.5/NOPB ACTIVE TO NDU 2 1000 Green (RoHS
& no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185BYH2.5
LM285BXM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX
M2.5
LM285BXMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX
M2.5
LM285BXZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 285BX
Z2.5
LM285BYM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY
M2.5
LM285BYMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY
M2.5
LM285BYZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 285BY
Z2.5
LM285M-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285
M2.5
LM285MX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285
M2.5
LM285Z-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SN Level-1-NA-UNLIM LM285
Z-2.5
LM285Z-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 LM285
Z-2.5
LM385BM-2.5 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM385
BM2.5
LM385BM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385
BM2.5
LM385BMX-2.5 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385
BM2.5
PACKAGE OPTION ADDENDUM
www.ti.com 21-May-2013
Addendum-Page 2
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM385BMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385
BM2.5
LM385BXM-2.5 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 385BX
M2.5
LM385BXM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX
M2.5
LM385BXMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX
M2.5
LM385BXZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BX
Z-2.5
LM385BYM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY
M2.5
LM385BYMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY
M2.5
LM385BYZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BY
Z-2.5
LM385BZ-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM LM385
BZ2.5
LM385BZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385
BZ2.5
LM385M-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385
M2.5
LM385M3-2.5 ACTIVE SOT-23 DBZ 3 1000 TBD Call TI Call TI 0 to 70 R12
LM385M3-2.5/NOPB ACTIVE SOT-23 DBZ 3 1000 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R12
LM385M3X-2.5 ACTIVE SOT-23 DBZ 3 3000 TBD Call TI Call TI 0 to 70 R12
LM385M3X-2.5/NOPB ACTIVE SOT-23 DBZ 3 3000 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R12
LM385MX-2.5 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385
M2.5
LM385MX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385
M2.5
LM385Z-2.5/LFT1 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM LM385
Z2.5
PACKAGE OPTION ADDENDUM
www.ti.com 21-May-2013
Addendum-Page 3
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM385Z-2.5/LFT2 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM LM385
Z2.5
LM385Z-2.5/LFT3 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM LM385
Z2.5
LM385Z-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM LM385
Z2.5
LM385Z-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS
& no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385
Z2.5
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 21-May-2013
Addendum-Page 4
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM285BXMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM285BYMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM285MX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385BMX-2.5 SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385BMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385BXMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385BYMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385M3-2.5 SOT-23 DBZ 3 1000 178.0 8.4 3.3 2.9 1.22 4.0 8.0 Q3
LM385M3-2.5/NOPB SOT-23 DBZ 3 1000 178.0 8.4 3.3 2.9 1.22 4.0 8.0 Q3
LM385M3X-2.5 SOT-23 DBZ 3 3000 178.0 8.4 3.3 2.9 1.22 4.0 8.0 Q3
LM385M3X-2.5/NOPB SOT-23 DBZ 3 3000 178.0 8.4 3.3 2.9 1.22 4.0 8.0 Q3
LM385MX-2.5 SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM385MX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Apr-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM285BXMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM285BYMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM285MX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM385BMX-2.5 SOIC D 8 2500 367.0 367.0 35.0
LM385BMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM385BXMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM385BYMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM385M3-2.5 SOT-23 DBZ 3 1000 210.0 185.0 35.0
LM385M3-2.5/NOPB SOT-23 DBZ 3 1000 210.0 185.0 35.0
LM385M3X-2.5 SOT-23 DBZ 3 3000 210.0 185.0 35.0
LM385M3X-2.5/NOPB SOT-23 DBZ 3 3000 210.0 185.0 35.0
LM385MX-2.5 SOIC D 8 2500 367.0 367.0 35.0
LM385MX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Apr-2013
Pack Materials-Page 2
MECHANICAL DATA
NDU0002A
www.ti.com
H02A (Rev F)
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