5SDD 10T1800
TS - D/117/04 Jul-10 1 of 6
5SDD 10T1800
Old part no. D 806C-1010-18
Rectifier Diode
Properties Key Parameters
§ Industry standard housing VRRM = 1 800 V
§ Suitable for parallel operation IFAVm = 1 013 A
§ High operating temperature IFSM = 13 500
A
§ Low forward voltage drop VTO = 0.934 V
rT = 0.257 mΩ
Types
VRRM
5SDD 10T1800
5SDD 10T1600 1 800 V
1 600 V
Conditions:
Tj = -40 ÷ 150 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mounting force 9 ± 3
kN
m Weight 0.11
kg
DS Surface creepage
distance 16
mm
Da Air strike distance 9.7
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10 2 of 6
Major Ratings Value Unit
VRRM Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 10T1800
5SDD 10T1600 1 800
1 600 V
IFAVm Average forward current
Tc = 85 °C 1 013 A
IFRMS RMS forward current
Tc = 85 °C 1 592 A
IRRM Repetitive reverse current
VR = VRRM 30 mA
tp = 10 ms 13 500
IFSM Non repetitive peak surge current
half sine pulse, VR = 0 V tp = 8.3 ms 14 400
A
tp = 10 ms 10 800
IFSM Non repetitive peak surge current
half sine pulse, VR = 0.7 VRRM tp = 8.3 ms 11 500
A
tp = 10 ms 910 000
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 8.3 ms 860 000
A2s
tp = 10 ms 583 000
I2t Limiting load integral
half sine pulse, VR = 0.7 VRRM tp = 8.3 ms 549 000
A2s
Tjmin -Tjmax Operating temperature range -40 ÷ 150 °C
TSTG Storage temperature range -40 ÷ 175 °C
Unless otherwise specified Tj = 150 °C
Value Characteristics
min typ max
Unit
VT0 Threshold voltage 0.934
V
rT Forward slope resistance
IF1 = 1 600 A, IF2 = 4 000 A 0.257
mΩ
VFM Maximum forward voltage
IFM =2000 A, Tj = 25 °C 1.40 V
Qrr Recovered charge
VR = 100 V, IFM = 1000 A, di/dt = -30 A/µs 550 µC
Unless otherwise specified Tj = 150 °C
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10 3 of 6
Thermal Parameters Value Unit
double side cooling 38 K/kW
anode side cooling 58
Rthjc Thermal resistance
junction to case
cathode side cooling 110
double side cooling 12 K/kW
Rthch Thermal resistance
case to heatsink single side cooling 24
Transient Thermal Impedance
i 1 2 3 4
τi ( s ) 0.2912 0.0890 0.0153 0.0018
Ri( K/kW )
8.82 24.43 1.88 2.87
0
5
10
15
20
25
30
35
40
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 9 ± 3 kN, Double side cooled
Correction for periodic waveforms
180°
sine: 2.7
K/kW
180°
rectangular:
5.0
K/kW
120°
rectangular:
8.6
K/kW
60°
rectangular:
16.3
K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10 4 of 6
Maximum forward voltage drop characteristics
Tj ( °C )
A B C D
25 0.19567
1.938E-04 -0.00762 0.15181
150 0.28526
1.767E-04 0.00529 0.07669
0
1000
2000
3000
4000
5000
6000
0,5 1 1,5 2 2,5
V
F
( V )
I
F
( A )
T
j
= 25°C
150°C
Analytical function for maximum
forward drop characteristics
)1ln( +⋅+⋅+⋅+= FFFF IDICIBAV
Conditions:
Fm = 9 ± 3 kN, halfsine pulse 8.3 ÷ 10 ms
Fig. 3
Maximum forward voltage drop characteristics
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10 5 of 6
6
8
10
12
14
16
18
20
22
24
1 10 100
t ( ms )
IFSM ( kA )
0,4
0,5
0,6
0,7
0,8
0,9
1
1,1
1,2
1,3
i2dt (106 A2s)
I
FSM
V
R
= 0 V
∫
i2dt
V
R
= 0 V
V
R
= 0.7 V
RRM
V
R
= 0.7 V
RRM
0
2
4
6
8
10
12
14
16
1 10 100
Number n of pulses at 50 Hz
IFSM ( kA )
V
R
= 0
V
R
≤ 0.7 V
RRM
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse, Tj = Tjmax Fig. 5
Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
0
200
400
600
800
1000
1200
1400
1600
1800
0200 400 600 800 1000 1200
I
FAV
( A )
P
T
( W )
120°
180°
DC
ψ
= 60°
0
200
400
600
800
1000
1200
1400
1600
1800
0200 400 600 800 1000 1200
I
FAV
( A )
P
T
( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10 6 of 6
60
70
80
90
100
110
120
130
140
150
160
0 200 400 600 800 1000 1200
I
FAV
( A )
T
C
( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
60
70
80
90
100
110
120
130
140
150
160
0 200 400 600 800 1000 1200
I
FAV
( A )
T
C
( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 8
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f Fig. 9
Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T = 1/f
Notes:
