© 2009 IXYS CORPORATION, All Rights Reserved
GenX3TM 600V IGBT IXGH72N60C3
High-Speed PT IGBT for
40-100kHz Switching
VCES = 600V
IC110 = 72A
VCE(sat) ≤ ≤
≤ ≤
≤
2.5V
tfi (typ) = 55ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 600 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 50A, VGE = 15V 2.10 2.50 V
TJ = 125°C 1.65 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Limited by Leads) 75 A
IC110 TC= 110°C (Chip Capability) 72 A
ICM TC= 25°C, 1ms 360 A
IATC= 25°C 50 A
EAS TC= 25°C 500 mJ
SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 150 A
(RBSOA) Clamped Inductive Load VCE ≤ VCES
PCTC= 25°C 540 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
DS99961B(11/09)
Features
zOptimized for Low Switching Losses
zSquare RBSOA
zAvalanche Rated
zInternational Standard Package
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
GCE Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH72N60C3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 50A, VCE = 10V, Note 1 33 55 S
Cies 4780 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 330 pF
Cres 117 pF
Qg 174 nC
Qge IC = 50A, VGE = 15V, VCE = 0.5 • VCES 33 nC
Qgc 72 nC
td(on) 27 ns
tri 37 ns
Eon 1.03 mJ
td(off) 77 130 ns
tfi 55 110 ns
Eoff 0.48 0.95 mJ
td(on) 26 ns
tri 36 ns
Eon 1.48 mJ
td(off) 120 ns
tfi 124 ns
Eoff 0.93 mJ
RthJC 0.23 °C/W
RthCK 0.21 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive Load, TJ = 25°°
°°
°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 2Ω, Note 2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter Tab - Collector
Inductive Load, TJ = 125°°
°°
°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 2Ω, Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60C3
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
IC - Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
02468101214
VCE - Volts
IC
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
5V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VCE - Volts
IC - Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
JunctionTemperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0 25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fi g . 5. C o l l ecto r -to -Emi tter Vo l tag e
vs. Gate-to -Emitter Vol tag e
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6 7 8 9 10 11 12 13 14 15
VGE - Volts
VCE - Volts
I
C
= 100A
50A
25A
T
J
= 25ºC
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH72N60C3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B i as Safe Oper ati n g Area
0
20
40
60
80
100
120
140
160
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC , R
G
= 2
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 50A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g . 11. Maximum Tr an si ent Ther mal I mped ance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60C3
Fig. 12. Inductive Switching
Energ y L oss vs. Gate R esi st an ce
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
23456789101112131415
R
G
- Ohms
E
off
- MilliJoules
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 17. Inductive T urn-off
Switching T imes vs. Juncti on T emperature
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
-
Nanoseconds
65
75
85
95
105
115
125
t
d(off)
-
Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2 , V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 15. Inductive T urn-off
Switch in g Ti mes vs. Gate R esistance
90
100
110
120
130
140
150
160
170
180
190
23456789101112131415
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
400
450
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching
Energ y L o ss vs. C o ll ecto r C ur r en t
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2 , V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC, 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2 , V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 16. Inductive Turn-off
Switch in g Ti mes vs. C o ll ector C ur r en t
20
40
60
80
100
120
140
160
180
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f
- Nanoseconds
70
80
90
100
110
120
130
140
150
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2 , V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH72N60C3
Fig. 19. Inductive Turn-on
Switch i ng Times vs. C ol l ector C u rr en t
10
20
30
40
50
60
70
80
90
100
110
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r
-
Nanoseconds
18
20
22
24
26
28
30
32
34
36
38
t
d
(
on
)
-
Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 2
, V
GE
= 15V
V
CE
= 480V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Switch i n g Times vs. Ju nctio n Temper atu r e
20
30
40
50
60
70
80
90
100
110
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
-
Nanoseconds
25
26
27
28
29
30
31
32
33
34
35
t
d(on)
-
Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 2
, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
Fig. 18. Inducti ve Turn-on
Switch i ng Times vs. Gate Resi stan ce
20
40
60
80
100
120
140
160
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
25
30
35
40
45
50
55
60
t
d
(
on
)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
IXYS REF: G_72N60C3(8D)11-25-09-C
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