T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 1 of 6
2N3418 thru 2N3421
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, JAN TX a n d
JANTXV
DESCRIPTION
This family of high-freq uency, epitaxial planar t r ans i stor s featu r e low sat uration volt age. These
devic es a r e al so a vailable i n TO-39 and low profi le U 4 packaging. Mic r osemi als o offe r s
num er ous other tr ans i stor products to meet high er and lower p ower rati ngs wit h var ious
switching speed requirem ents in both through-hole and su r face-mou nt packages.
TO-5 Package
Also available in:
TO-39 package
(short leaded)
2N3418S – 2N3421S
U4 package
(surface mount)
2N3418U4 – 2N3421U4
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3418 through 2N3421 ser ies.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.25 V @ IC = 1 A.
• Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
• Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -100 mA.
APPLICAT IONS / BENE FITS
• General purpose transis tors for medi um power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3418
2N3420
2N3419
2N3421
Unit
Collector-Emitter Voltage VCEO 60 80 V
Collector-Base Voltage VCBO 85 125 V
Emitter-Base Voltage VEBO 8 V
Collector Current
tp <= 1 ms, duty cycle <= 50%
IC
3
5
A
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +100 °C (2) PD 1
5 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for T C > +100 °C.
T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 2 of 6
2N3418 thru 2N3421
• CASE: Hermetically sealed, kovar base, nick el cap
• MARKING: Part number, date code, manufacturer’s ID
• POLARITY: See Package Dimensions on last page.
JAN 2N3418 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS Compl iant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-b ase op en-ci r cuit outp ut capac i tance.
ICEO
Collector c utoff current , base open .
ICEX
Collector c utoff current , circuit b etween base an d emit ter.
IEBO
Emitt er cutoff current, collector open .
hFE
Common-emitter static forward cu r r ent transfer r atio.
VCEO
Collector-emitter volt age, base op en.
VCBO
Collector-emitter volt age, em itter open.
VEBO
Emitter-base voltage, collector open .
T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 3 of 6
2N3418 thru 2N3421
OFF CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Collector-Emit ter Breakdown C urrent
V(BR)CEO
V
I
C
= 50 mA, I
B
= 0
2N3418, 2N3420
2N3419, 2N3421
60
80
Collector-Emit ter Cut off Current
ICEX
0.3
0.3 µA
V
BE
= -0.5 V, V
CE
= 80 V
VBE = -0.5 V, VCE = 120 V
2N3418, 2N3420
2N3419, 2N3421
Collector-Base Cutoff Current
VCE = 45 V, IB = 0
VCE = 60 V, IB = 0
2N3418, 2N3420
2N3419, 2N3421
ICEO
5.0
5.0 µA
Emitter-Base C utoff Current
VEB = 6.0 V, IC = 0
VEB = 8.0 V, IC = 0
IEBO
0.5
10 µA
ON CHARACT ERISTICS (1)
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Curren t Tran sfer Rati o
hFE
I
C
= 100 mA, V
CE
= 2.0 V
2N3418, 2N3419
2N3420, 2N3421
20
40
I
C
= 1.0 A, V
CE
= 2.0 V
2N341 8, 2N 3 41 9
2N3420, 2N3421
20
40
60
120
I
C
= 2.0 A, V
CE
= 2.0 V
2N341 8, 2N 3 41 9
2N3420, 2N3421
15
30
I
C
= 5.0 A, V
CE
= 5.0 V
2N341 8, 2N 3 41 9
2N3420, 2N3421
10
15
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 1.0 A, I
B
= 0.1 A
IC = 2.0 A, IB = 0.2 A
0.25
0.5
Base-Emitter S aturation Voltag e
IC = 1.0 A, IB = 0.1 A
IC = 2.0 A, IB = 0.2 A
VBE(sat)
0.6
0.7
1.2
1.4
V
DYNAMIC CHARACT ERISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Magn itude of Common Emitter Small-Signal Short Circuit
Forward Cur r ent Transfer Ratio |hfe| 1.3 0.8
IC = 0.1 A, VCE = 10 V, f = 20 MHz
O utput Capac itance
Cobo 150 pF
VCB = 10 V, IE = 0, 100 kH z ≤ f ≤ 1.0 MHz
NOTES: (1) Pulse Test: Pulse Width = 300 µs, Du t y Cycle ≤ 2.0%.
T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 4 of 6
2N3418 thru 2N3421
SWIT CHING CHARACT ERISTICS
Paramete r s / Test Conditions (f or all symbols) Symbol Min. Max. Unit
Delay Tim e
Rise Time
V
BE(off)
= -3.7 V,
IC = 1.0 A, IB1 = 100 mA
t
d
tr
0.08
0.22
µs
S torage Tim e
Fall Tim e VBE(off) = -3.7 V,
I
C
= 1.0 A, I
B2
= -100 mA ts
t
f
1.10
0.20 µs
Turn-Off Time
V
BE(off)
= -3.7 V, I
C
= 1.0 A,
IB2 = -100 mA, RL = 20 Ω
toff toff 1.20 µs
SAFE OPERAT ING AREA ( See graph below an d reference MIL-STD-750, me thod 30 53 )
DC Te st
TC = +100 °C, 1 cycle, t > 1.0 s
Test 1
VCE = 5.0 V, IC = 3.0 A
Test 2
VCE = 37 V, IC = 0.4 A
Test 3
VCE = 60 V, IC = 0.185 A
VCE = 80 V, IC = 0.12 A
2N3418, 2N3420
2N3419, 2N3421
Clampe d Switc hing TA = +25 °C, IB = 0.5 A, IC = 3.0 A
COLLECTOR TO EMITTER VOLTAGE VCE (VOLTS)
Maximum Safe Operating Area (continuous dc)
COLLECTOR CURRENT I
C
(AMPERES)
T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 5 of 6
2N3418 thru 2N3421
TC (oC) (Case)
FIGURE 1
Temperature-Power Der ating Curve
NOTES: Thermal Resistance Junction to Case = 4.5 oC/W
Ma x F ini sh -Alloy Temp = 175 oC
TIME (s)
FIGURE 2
Maximum Th er mal Imped anc e
NOTE: TC = +25 °C , Thermal R esistance RθJC = 4.5 °C/W
DC Operation Maximum Rating (W)
THETA (oC/W)
T4-LDS-0192, Rev. 2 (111684) ©2011 Microsemi Corporation Page 6 of 6
2N3418 thru 2N3421
1. Dimensions are in inches.
2. Millimeters a re gi ven for g eneral information only.
3. Symbol TL is measured from HD maximum.
4. Details of ou tline in this zone are optional.
5. Symbol CD shall not vary mor e than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Lead s at ga uge p lane .0 54 i nc h (1.37 mm) +.001 in ch (0.03 mm) -.000 inch (0.00 mm ) bel ow seating plane shall be within .007 inch (0.18 mm)
radius of TP relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL min imum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. Lead number 3 is electrically connected to case.
9. Beyon d r maximum, TW shall be hel d for a minimum length of .021 inch (0.53 mm).
10. Lead number 4 omitted on this variation .
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3418, 2N3419, 2N3420, 2N3421, LL is 1.500 (38.10 mm) minimum, and 1.750 (44.45 mm) max imum.
13. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
14. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
LL
.500
.750
12.7
19.05
7
LU
See notes 7, 13, 14
L1
.050
1.27
7
L2
.250
6.35
7
P
.100
2.54
5
Q
.040
1.02
4
TL
.029
.045
0.74
1.14
3, 10
TW
.028
.034
0.71
.86
9, 10
r
.010
0.25
11
α
45° TP
45° TP
6