TD62707AP
2001-07-05
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62707AP
4CH HIGHVOLTAGE SOURCE DRIVER WITH ENABLE
The TD62707AP is comprised of four source current output stages
and enable inputs which can gate the outputs. All outputs feature
integral clamp diodes for switching inductive loads.
Applications include relay, hammer and lamp drivers.
FEATURES
High output voltage VCCVOUT = 50 V MIN.
Output current (single output) IOUT = 750 mA MIN.
Input compatible with TTL, 5 V CMOS
Output clamp diodes
Enable inputs E1, E2
GND terminal = HEAT SINK
Package type : DIP−16 pin
PIN CONNECTION (TOP VIEW)
SCHEMATICS (EACH DRIVER)
Note: The output parasitic diodes cannot be used as clamp diodes.
Weight: 1.11 g (Typ.)
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2001-07-05
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TRUTH TABLE
E1 E2 IN1~4 OUT1~4
H H H OFF
H L H ON
L H H OFF
H H L OFF
L L H OFF
L L L OFF
H L L OFF
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 50 V
Output Voltage VOUT 50 V
Output Current IOUT 0.75 A / ch
VIN1 0.5~15
Input Voltage
VIN2 (Note 1) 0.5~VCC
V
Clamp Diode Reverse Voltage VR 50 V
Clamp Diode Forward Current IF 0.75 A
Power Dissipation PD 1.47 / 2.7
(Note 2) W
Operating Temperature Topr 40~85 °C
Storage Temperature Tstg 55~150 °C
Note 1: VCC 15 V
Note 2: On PCB (50 × 50 × 1.6 mm Cu 50%)
RECOMMENDED OPERATING CONDITIONS (Ta = 40~85°C)
CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT
Supply Voltage VCC 50 V
Output Voltage VOUT 0 50 V
DC 1 Circuits, Ta = 25°C 0 600
Duty = 10 % 0 600
Output Current IOUT
(Note) Tpw = 25 ms, 4 Circuits
Ta = 85°C, Tj = 120°C Duty = 50 % 0 160
mA /
ch
V
IN 0 15
VIH1 VCC > 15 V 2.0 15
"H" level
VIH2 VCC 15 V 2.0 V
CC
Input Voltage
"L" level VIL 0 0.8
V
Clamp Diode Reverse Voltage VR 50 V
Clamp Diode Forward Current IF 600 mA
Power Dissipation PD Ta = 85°C (Note) 1.2 W
Note: On PCB (50 × 50 × 1.6 mm Cu 50%)
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2001-07-05
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ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted VCC = 50 V, "H" = VIH, "L" = VIL)
CHARACTERISTIC SYMBOL
TEST
CIR
CUIT
TEST CONDITION MIN TYP. MAX UNIT
"H" level VIH 2.0
Input Voltage
"L" level VIL
1
0.8
V
IN VIN = H 70 100
E1 VE1 = H 0 10
Input Current "H" level
E2
IIH 4
VE2 = H 66 100
µA
IN VIN = L 40 100
E1 VE1 = L 20 50
Input Current "L" level
E2
IIL 5
VE2 = H 40 100
µA
Output Leakage Current IOL 2 VCC = 50 V, OUTPUT OFF 100 µA
ICCH 4 VIN = H, VE1 = H
VE2 = L, OUTPUT OPEN 5.5 7.0
Supply Current
ICCL 5 VIN = L, VE1 = H
VE2 = L, OUTPUT OFF 5.5 7.0
mA
Output Voltage "H" level VOH 3 VIN = H, VE1 = "H"
VE2 = L, IOUT = 500 mA
VCC
2.5
VCC
2.0 V
Clamp Diode Reverse Current IR 6 VR = 50 V 100 µA
Clamp Diode Forward Voltage VF 7 IF = 500 mA 1.5 2.0 V
TurnOn Delay tON 0.5
TurnOff Delay tOFF
8 VCE = 50 V, RL = 83
6.0
µs
TEST CIRCUIT
1. VIH, VIL 2. IOL
3. VOH 4. IIH, ICCH
5. IIL, ICCL 6. IR
TD62707AP
2001-07-05
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7. VF
8. tON, tOFF
Note 1: Pulse Width 50 µs, Duty Cycle 10%
Output Impedance 50 , tr 5 ns, tf 10 ns
Note 2: VIH = 3 V, E1 = VIH, E2 = GND, VCC = 50 V
Note 3: CL includes probe and jig capacitance
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to
shortcircuit between outputs, air contamination fault, or fault by improper grounding.
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2001-07-05
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TD62707AP
2001-07-05
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TD62707AP
2001-07-05
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PACKAGE DIMENSIONS
DIP16P3002.54A Unit: mm
Weight: 1.11 g (Typ.)
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2001-07-05
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The information contained herein is subject to change without notice.
000707EB
A
RESTRICTIONS ON PRODUCT USE